GB1202515A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1202515A
GB1202515A GB3706/69A GB370669A GB1202515A GB 1202515 A GB1202515 A GB 1202515A GB 3706/69 A GB3706/69 A GB 3706/69A GB 370669 A GB370669 A GB 370669A GB 1202515 A GB1202515 A GB 1202515A
Authority
GB
United Kingdom
Prior art keywords
insulating layer
metal layer
layer
substrate
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3706/69A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1968006635U external-priority patent/JPS4620485Y1/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1202515A publication Critical patent/GB1202515A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor

Landscapes

  • Formation Of Insulating Films (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Electrodes Of Semiconductors (AREA)
GB3706/69A 1968-01-24 1969-01-22 Semiconductor device Expired GB1202515A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP376268 1968-01-24
JP1968006635U JPS4620485Y1 (https=) 1968-02-02 1968-02-02

Publications (1)

Publication Number Publication Date
GB1202515A true GB1202515A (en) 1970-08-19

Family

ID=26337401

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3706/69A Expired GB1202515A (en) 1968-01-24 1969-01-22 Semiconductor device

Country Status (4)

Country Link
DE (1) DE1903342B2 (https=)
FR (1) FR2000657A1 (https=)
GB (1) GB1202515A (https=)
NL (1) NL6901059A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS511396B1 (https=) * 1970-09-07 1976-01-16
DE2503864A1 (de) * 1975-01-30 1976-08-05 Siemens Ag Halbleiterbauelement

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767981A (en) * 1971-06-04 1973-10-23 Signetics Corp High voltage planar diode structure and method
US3961358A (en) * 1973-02-21 1976-06-01 Rca Corporation Leakage current prevention in semiconductor integrated circuit devices
GB2097581A (en) * 1981-04-24 1982-11-03 Hitachi Ltd Shielding semiconductor integrated circuit devices from light
JPS5984542A (ja) * 1982-11-08 1984-05-16 Nec Corp 高周波半導体集積回路
US5432127A (en) * 1989-06-30 1995-07-11 Texas Instruments Incorporated Method for making a balanced capacitance lead frame for integrated circuits having a power bus and dummy leads
US5700715A (en) * 1994-06-14 1997-12-23 Lsi Logic Corporation Process for mounting a semiconductor device to a circuit substrate

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1419107A (fr) * 1964-02-04 1965-11-26 Fairchild Camera Instr Co Réglage équipotentiel des caractéristiques de surface d'un semi-conducteur

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS511396B1 (https=) * 1970-09-07 1976-01-16
DE2503864A1 (de) * 1975-01-30 1976-08-05 Siemens Ag Halbleiterbauelement

Also Published As

Publication number Publication date
NL6901059A (https=) 1969-07-28
DE1903342B2 (de) 1971-05-13
DE1903342A1 (de) 1969-09-11
FR2000657A1 (https=) 1969-09-12

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee