GB1190523A - Insulated Gate Semiconductor Devices - Google Patents

Insulated Gate Semiconductor Devices

Info

Publication number
GB1190523A
GB1190523A GB34526/68D GB3452668D GB1190523A GB 1190523 A GB1190523 A GB 1190523A GB 34526/68 D GB34526/68 D GB 34526/68D GB 3452668 D GB3452668 D GB 3452668D GB 1190523 A GB1190523 A GB 1190523A
Authority
GB
United Kingdom
Prior art keywords
heating
source
gate insulation
drain
insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB34526/68D
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1190523A publication Critical patent/GB1190523A/en
Expired legal-status Critical Current

Links

Classifications

    • H10W74/43—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
GB34526/68D 1967-08-02 1968-07-19 Insulated Gate Semiconductor Devices Expired GB1190523A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65793067A 1967-08-02 1967-08-02

Publications (1)

Publication Number Publication Date
GB1190523A true GB1190523A (en) 1970-05-06

Family

ID=24639229

Family Applications (1)

Application Number Title Priority Date Filing Date
GB34526/68D Expired GB1190523A (en) 1967-08-02 1968-07-19 Insulated Gate Semiconductor Devices

Country Status (4)

Country Link
US (1) US3540925A (cg-RX-API-DMAC10.html)
DE (1) DE1764757C3 (cg-RX-API-DMAC10.html)
FR (1) FR1603354A (cg-RX-API-DMAC10.html)
GB (1) GB1190523A (cg-RX-API-DMAC10.html)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4822393B1 (cg-RX-API-DMAC10.html) * 1969-02-20 1973-07-05
US3903324A (en) * 1969-12-30 1975-09-02 Ibm Method of changing the physical properties of a metallic film by ion beam formation
GB1345818A (en) * 1971-07-27 1974-02-06 Mullard Ltd Semiconductor devices
JPS5213716B2 (cg-RX-API-DMAC10.html) * 1971-12-22 1977-04-16
US3852120A (en) * 1973-05-29 1974-12-03 Ibm Method for manufacturing ion implanted insulated gate field effect semiconductor transistor devices
US3849204A (en) * 1973-06-29 1974-11-19 Ibm Process for the elimination of interface states in mios structures
FR2235482A1 (en) * 1974-05-07 1975-01-24 Ibm Eliminating interface states in MIOS structures - at low temp to avoid degradation of electrical props
US4001049A (en) * 1975-06-11 1977-01-04 International Business Machines Corporation Method for improving dielectric breakdown strength of insulating-glassy-material layer of a device including ion implantation therein
US4069068A (en) * 1976-07-02 1978-01-17 International Business Machines Corporation Semiconductor fabrication method for improved device yield by minimizing pipes between common conductivity type regions
NL7710635A (nl) * 1977-09-29 1979-04-02 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4249962A (en) * 1979-09-11 1981-02-10 Western Electric Company, Inc. Method of removing contaminating impurities from device areas in a semiconductor wafer
DE3221180A1 (de) * 1981-06-05 1983-01-05 Mitsubishi Denki K.K., Tokyo Verfahren und vorrichtung zur herstellung einer halbleitervorrichtung
US4958204A (en) * 1987-10-23 1990-09-18 Siliconix Incorporated Junction field-effect transistor with a novel gate
DE3852543T2 (de) * 1988-09-01 1995-07-06 Ibm Dünne dielektrische Schicht auf einem Substrat und Verfahren zu deren Herstellung.
US5268311A (en) * 1988-09-01 1993-12-07 International Business Machines Corporation Method for forming a thin dielectric layer on a substrate
US5139869A (en) * 1988-09-01 1992-08-18 Wolfgang Euen Thin dielectric layer on a substrate

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2891203A (en) * 1954-03-23 1959-06-16 Sylvania Electric Prod Silicon rectifiers
US3298863A (en) * 1964-05-08 1967-01-17 Joseph H Mccusker Method for fabricating thin film transistors

Also Published As

Publication number Publication date
US3540925A (en) 1970-11-17
DE1764757B2 (de) 1973-05-10
DE1764757C3 (de) 1973-11-29
FR1603354A (cg-RX-API-DMAC10.html) 1971-04-13
DE1764757A1 (de) 1972-02-03

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees