GB1186945A - Improvements relating to Semiconductor Devices - Google Patents

Improvements relating to Semiconductor Devices

Info

Publication number
GB1186945A
GB1186945A GB01872/68A GB1187268A GB1186945A GB 1186945 A GB1186945 A GB 1186945A GB 01872/68 A GB01872/68 A GB 01872/68A GB 1187268 A GB1187268 A GB 1187268A GB 1186945 A GB1186945 A GB 1186945A
Authority
GB
United Kingdom
Prior art keywords
mask
semi
conductor
march
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB01872/68A
Other languages
English (en)
Inventor
Waldemar Kurt Van Muench
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1186945A publication Critical patent/GB1186945A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/875—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having thin-film semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0278—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline channels on wafers after forming insulating device isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/871—Vertical FETs having Schottky gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
GB01872/68A 1967-03-15 1968-03-12 Improvements relating to Semiconductor Devices Expired GB1186945A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH379567A CH455055A (de) 1967-03-15 1967-03-15 Halbleiteranordnung, bestehend aus einem Substrat, einer Öffnungen enthaltenden Maske und einer durch die Öffnungen mit dem Substrat verbundenen einkristallinen Halbleiterschicht

Publications (1)

Publication Number Publication Date
GB1186945A true GB1186945A (en) 1970-04-08

Family

ID=4263614

Family Applications (1)

Application Number Title Priority Date Filing Date
GB01872/68A Expired GB1186945A (en) 1967-03-15 1968-03-12 Improvements relating to Semiconductor Devices

Country Status (4)

Country Link
CH (1) CH455055A (enrdf_load_stackoverflow)
DE (1) DE1639282A1 (enrdf_load_stackoverflow)
FR (1) FR1555057A (enrdf_load_stackoverflow)
GB (1) GB1186945A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4624004A (en) 1985-07-15 1986-11-18 Eaton Corporation Buried channel MESFET with backside source contact
US4724220A (en) * 1985-02-19 1988-02-09 Eaton Corporation Method for fabricating buried channel field-effect transistor for microwave and millimeter frequencies
US4833095A (en) * 1985-02-19 1989-05-23 Eaton Corporation Method for buried channel field effect transistor for microwave and millimeter frequencies utilizing ion implantation
US4837175A (en) * 1983-02-15 1989-06-06 Eaton Corporation Making a buried channel FET with lateral growth over amorphous region
US4935789A (en) * 1985-02-19 1990-06-19 Eaton Corporation Buried channel FET with lateral growth over amorphous region

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1229093B (de) * 1963-01-23 1966-11-24 Basf Ag Verfahren zur Herstellung von Hexahydropyrimidinderivaten
DE2263091C2 (de) * 1971-12-27 1983-01-27 Fujitsu Ltd., Kawasaki, Kanagawa Feldeffekttransistor
NL188550C (nl) * 1981-07-02 1992-07-16 Suwa Seikosha Kk Werkwijze voor het vervaardigen van een halfgeleidersubstraat.
US4637127A (en) * 1981-07-07 1987-01-20 Nippon Electric Co., Ltd. Method for manufacturing a semiconductor device
US4990977A (en) * 1988-03-29 1991-02-05 Xerox Corporation High current thin film transistor
WO1991001569A1 (fr) * 1989-07-14 1991-02-07 Seiko Instruments Inc. Dispositif a semi-conducteurs et procede de production

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4837175A (en) * 1983-02-15 1989-06-06 Eaton Corporation Making a buried channel FET with lateral growth over amorphous region
US4724220A (en) * 1985-02-19 1988-02-09 Eaton Corporation Method for fabricating buried channel field-effect transistor for microwave and millimeter frequencies
US4833095A (en) * 1985-02-19 1989-05-23 Eaton Corporation Method for buried channel field effect transistor for microwave and millimeter frequencies utilizing ion implantation
US4935789A (en) * 1985-02-19 1990-06-19 Eaton Corporation Buried channel FET with lateral growth over amorphous region
US4624004A (en) 1985-07-15 1986-11-18 Eaton Corporation Buried channel MESFET with backside source contact

Also Published As

Publication number Publication date
DE1639282A1 (de) 1971-02-18
CH455055A (de) 1968-04-30
FR1555057A (enrdf_load_stackoverflow) 1969-01-24

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee