GB1288029A - - Google Patents
Info
- Publication number
- GB1288029A GB1288029A GB4816370A GB4816370A GB1288029A GB 1288029 A GB1288029 A GB 1288029A GB 4816370 A GB4816370 A GB 4816370A GB 4816370 A GB4816370 A GB 4816370A GB 1288029 A GB1288029 A GB 1288029A
- Authority
- GB
- United Kingdom
- Prior art keywords
- arsenic
- phosphorus
- boron
- march
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052785 arsenic Inorganic materials 0.000 abstract 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052698 phosphorus Inorganic materials 0.000 abstract 5
- 239000011574 phosphorus Substances 0.000 abstract 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 4
- 229910052796 boron Inorganic materials 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052582 BN Inorganic materials 0.000 abstract 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000002244 precipitate Substances 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP45010376A JPS504310B1 (enrdf_load_stackoverflow) | 1970-02-07 | 1970-02-07 | |
| JP45017103A JPS505908B1 (enrdf_load_stackoverflow) | 1970-03-02 | 1970-03-02 | |
| JP45020826A JPS4940111B1 (enrdf_load_stackoverflow) | 1970-03-13 | 1970-03-13 | |
| JP45025627A JPS501871B1 (enrdf_load_stackoverflow) | 1970-03-28 | 1970-03-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1288029A true GB1288029A (enrdf_load_stackoverflow) | 1972-09-06 |
Family
ID=27455384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4816370A Expired GB1288029A (enrdf_load_stackoverflow) | 1970-02-07 | 1970-10-09 |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE2049696C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2080965B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1288029A (enrdf_load_stackoverflow) |
| NL (1) | NL162512C (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2200251A (en) * | 1984-02-02 | 1988-07-27 | Stanford Res Inst Int | Semiconductor circuit structure having dislocation-free substrate |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3821038A (en) * | 1972-05-22 | 1974-06-28 | Ibm | Method for fabricating semiconductor structures with minimum crystallographic defects |
| FR2186734A1 (en) * | 1972-05-29 | 1974-01-11 | Radiotechnique Compelec | Microwave semiconductor component production - by simultaneous multiple diffusion from doped insulation films |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB953034A (en) * | 1961-07-13 | 1964-03-25 | Clevite Corp | Improvements in or relating to semiconductor devices |
| AT243318B (de) * | 1962-09-21 | 1965-11-10 | Siemens Ag | Verfahren zur Herstellung hoher Dotierungsgrade in Halbleiterstoffen |
| US3249831A (en) * | 1963-01-04 | 1966-05-03 | Westinghouse Electric Corp | Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient |
-
1970
- 1970-10-09 FR FR7036629A patent/FR2080965B1/fr not_active Expired
- 1970-10-09 DE DE2049696A patent/DE2049696C3/de not_active Expired
- 1970-10-09 GB GB4816370A patent/GB1288029A/en not_active Expired
- 1970-10-09 NL NL7014842.A patent/NL162512C/xx not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2200251A (en) * | 1984-02-02 | 1988-07-27 | Stanford Res Inst Int | Semiconductor circuit structure having dislocation-free substrate |
| GB2200250A (en) * | 1984-02-02 | 1988-07-27 | Stanford Res Inst Int | Semiconductor circuit structure having dislocation-free substrate |
| GB2200249A (en) * | 1984-02-02 | 1988-07-27 | Stanford Res Inst Int | Semiconductor circuit structure having dislocation-free substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2049696B2 (de) | 1981-06-11 |
| NL162512B (nl) | 1979-12-17 |
| NL7014842A (enrdf_load_stackoverflow) | 1971-08-10 |
| FR2080965B1 (enrdf_load_stackoverflow) | 1976-05-28 |
| FR2080965A1 (enrdf_load_stackoverflow) | 1971-11-26 |
| DE2049696C3 (de) | 1982-02-18 |
| DE2049696A1 (de) | 1971-08-26 |
| NL162512C (nl) | 1980-05-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 435 | Patent endorsed 'licences of right' on the date specified (sect. 35/1949) | ||
| PE20 | Patent expired after termination of 20 years |