FR1555057A - - Google Patents

Info

Publication number
FR1555057A
FR1555057A FR1555057DA FR1555057A FR 1555057 A FR1555057 A FR 1555057A FR 1555057D A FR1555057D A FR 1555057DA FR 1555057 A FR1555057 A FR 1555057A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1555057A publication Critical patent/FR1555057A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/875—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having thin-film semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0278—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline channels on wafers after forming insulating device isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/871—Vertical FETs having Schottky gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
FR1555057D 1967-03-15 1968-02-07 Expired FR1555057A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH379567A CH455055A (de) 1967-03-15 1967-03-15 Halbleiteranordnung, bestehend aus einem Substrat, einer Öffnungen enthaltenden Maske und einer durch die Öffnungen mit dem Substrat verbundenen einkristallinen Halbleiterschicht

Publications (1)

Publication Number Publication Date
FR1555057A true FR1555057A (enrdf_load_stackoverflow) 1969-01-24

Family

ID=4263614

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1555057D Expired FR1555057A (enrdf_load_stackoverflow) 1967-03-15 1968-02-07

Country Status (4)

Country Link
CH (1) CH455055A (enrdf_load_stackoverflow)
DE (1) DE1639282A1 (enrdf_load_stackoverflow)
FR (1) FR1555057A (enrdf_load_stackoverflow)
GB (1) GB1186945A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2263091A1 (de) * 1971-12-27 1973-07-12 Fujitsu Ltd Feldeffekt-halbleitervorrichtung
DE3225398A1 (de) * 1981-07-07 1983-01-27 Nippon Electric Co., Ltd., Tokyo Halbleitervorrichtung und verfahren zu ihrer herstellung
NL8202526A (nl) * 1981-07-02 1983-02-01 Suwa Seikosha Kk Halfgeleidersubstraat voorzien van een film uit een halfgeleidend materiaal; werkwijze voor het vervaardigen daarvan.
EP0436038A4 (en) * 1989-07-14 1991-09-04 Seiko Instruments & Electronics Ltd. Semiconductor device and method of producing the same

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1229093B (de) * 1963-01-23 1966-11-24 Basf Ag Verfahren zur Herstellung von Hexahydropyrimidinderivaten
US4837175A (en) * 1983-02-15 1989-06-06 Eaton Corporation Making a buried channel FET with lateral growth over amorphous region
US4833095A (en) * 1985-02-19 1989-05-23 Eaton Corporation Method for buried channel field effect transistor for microwave and millimeter frequencies utilizing ion implantation
US4724220A (en) * 1985-02-19 1988-02-09 Eaton Corporation Method for fabricating buried channel field-effect transistor for microwave and millimeter frequencies
US4624004A (en) 1985-07-15 1986-11-18 Eaton Corporation Buried channel MESFET with backside source contact
US4935789A (en) * 1985-02-19 1990-06-19 Eaton Corporation Buried channel FET with lateral growth over amorphous region
US4990977A (en) * 1988-03-29 1991-02-05 Xerox Corporation High current thin film transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2263091A1 (de) * 1971-12-27 1973-07-12 Fujitsu Ltd Feldeffekt-halbleitervorrichtung
NL8202526A (nl) * 1981-07-02 1983-02-01 Suwa Seikosha Kk Halfgeleidersubstraat voorzien van een film uit een halfgeleidend materiaal; werkwijze voor het vervaardigen daarvan.
DE3225398A1 (de) * 1981-07-07 1983-01-27 Nippon Electric Co., Ltd., Tokyo Halbleitervorrichtung und verfahren zu ihrer herstellung
EP0436038A4 (en) * 1989-07-14 1991-09-04 Seiko Instruments & Electronics Ltd. Semiconductor device and method of producing the same

Also Published As

Publication number Publication date
GB1186945A (en) 1970-04-08
DE1639282A1 (de) 1971-02-18
CH455055A (de) 1968-04-30

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Legal Events

Date Code Title Description
ST Notification of lapse