GB1170709A - Improvements in or relating to the Doping of Semiconductor Crystals with Phosphorus - Google Patents

Improvements in or relating to the Doping of Semiconductor Crystals with Phosphorus

Info

Publication number
GB1170709A
GB1170709A GB08515/68A GB1851568A GB1170709A GB 1170709 A GB1170709 A GB 1170709A GB 08515/68 A GB08515/68 A GB 08515/68A GB 1851568 A GB1851568 A GB 1851568A GB 1170709 A GB1170709 A GB 1170709A
Authority
GB
United Kingdom
Prior art keywords
phosphorus
source
april
doping
relating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08515/68A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of GB1170709A publication Critical patent/GB1170709A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/19—Diffusion sources
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Compositions (AREA)
GB08515/68A 1967-04-20 1968-04-19 Improvements in or relating to the Doping of Semiconductor Crystals with Phosphorus Expired GB1170709A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0109426 1967-04-20

Publications (1)

Publication Number Publication Date
GB1170709A true GB1170709A (en) 1969-11-12

Family

ID=7529513

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08515/68A Expired GB1170709A (en) 1967-04-20 1968-04-19 Improvements in or relating to the Doping of Semiconductor Crystals with Phosphorus

Country Status (5)

Country Link
US (1) US3540951A (enExample)
DE (1) DE1644003A1 (enExample)
FR (1) FR1569941A (enExample)
GB (1) GB1170709A (enExample)
NL (1) NL6801367A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660156A (en) * 1970-08-19 1972-05-02 Monsanto Co Semiconductor doping compositions
US3658584A (en) * 1970-09-21 1972-04-25 Monsanto Co Semiconductor doping compositions
US3841927A (en) * 1972-11-10 1974-10-15 Owens Illinois Inc Aluminum metaphosphate source body for doping silicon
US3928096A (en) * 1974-01-07 1975-12-23 Owens Illinois Inc Boron doping of semiconductors
US3962000A (en) * 1974-01-07 1976-06-08 Owens-Illinois, Inc. Barium aluminoborosilicate glass-ceramics for semiconductor doping
US3954525A (en) * 1974-08-26 1976-05-04 The Carborundum Company Hot-pressed solid diffusion sources for phosphorus
US3931056A (en) * 1974-08-26 1976-01-06 The Carborundum Company Solid diffusion sources for phosphorus doping containing silicon and zirconium pyrophosphates
DE102014109179B4 (de) * 2014-07-01 2023-09-14 Universität Konstanz Verfahren zum Erzeugen von unterschiedlich dotierten Bereichen in einem Siliziumsubstrat, insbesondere für eine Solarzelle, und Solarzelle mit diesen unterschiedlich dotierten Bereichen

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE636317A (enExample) * 1962-08-23 1900-01-01

Also Published As

Publication number Publication date
FR1569941A (enExample) 1969-04-28
DE1644003A1 (de) 1970-09-24
NL6801367A (enExample) 1968-10-21
US3540951A (en) 1970-11-17

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