GB1198733A - Improvements in or relating to the Doping of Semiconductor Crystals with Phosphorus - Google Patents

Improvements in or relating to the Doping of Semiconductor Crystals with Phosphorus

Info

Publication number
GB1198733A
GB1198733A GB19313/68A GB1931368A GB1198733A GB 1198733 A GB1198733 A GB 1198733A GB 19313/68 A GB19313/68 A GB 19313/68A GB 1931368 A GB1931368 A GB 1931368A GB 1198733 A GB1198733 A GB 1198733A
Authority
GB
United Kingdom
Prior art keywords
phosphorus
doping
relating
semiconductor crystals
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB19313/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1198733A publication Critical patent/GB1198733A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,198,733. Diffusion process. SIEMENS A.G. 24 April, 1968 [26 April, 1967], No. 19313/68. Heading H1K. A source used in diffusing phosphorus from the vapour phase into semi-conductors such as silicon and germanium consists of a mixture of phosphorus pentoxide and water; the source temperature and the pressure in the system are chosen such that the mixture is azeotropic. The source may be made by adding phosphorus pentoxide to orthophosphoric acid or to metaphosphoric acid.
GB19313/68A 1967-04-26 1968-04-24 Improvements in or relating to the Doping of Semiconductor Crystals with Phosphorus Expired GB1198733A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0109553 1967-04-26

Publications (1)

Publication Number Publication Date
GB1198733A true GB1198733A (en) 1970-07-15

Family

ID=7529610

Family Applications (1)

Application Number Title Priority Date Filing Date
GB19313/68A Expired GB1198733A (en) 1967-04-26 1968-04-24 Improvements in or relating to the Doping of Semiconductor Crystals with Phosphorus

Country Status (4)

Country Link
DE (1) DE1644005A1 (en)
FR (1) FR1564240A (en)
GB (1) GB1198733A (en)
NL (1) NL6801668A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770521A (en) * 1971-04-14 1973-11-06 Ibm Method for diffusing b or p into s: substrates
US5174855A (en) * 1989-04-28 1992-12-29 Dainippon Screen Mfg. Co. Ltd. Surface treating apparatus and method using vapor

Also Published As

Publication number Publication date
DE1644005A1 (en) 1970-09-24
FR1564240A (en) 1969-04-18
NL6801668A (en) 1968-10-28

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees