DE1644003A1 - Verfahren zum Dotieren von Halbleiterkristallen - Google Patents

Verfahren zum Dotieren von Halbleiterkristallen

Info

Publication number
DE1644003A1
DE1644003A1 DE19671644003 DE1644003A DE1644003A1 DE 1644003 A1 DE1644003 A1 DE 1644003A1 DE 19671644003 DE19671644003 DE 19671644003 DE 1644003 A DE1644003 A DE 1644003A DE 1644003 A1 DE1644003 A1 DE 1644003A1
Authority
DE
Germany
Prior art keywords
source
phosphorus
semiconductor crystals
urch
phosphate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19671644003
Other languages
German (de)
English (en)
Inventor
Pammer Dr Erich
Christ Dr Hans
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of DE1644003A1 publication Critical patent/DE1644003A1/de
Pending legal-status Critical Current

Links

Classifications

    • H10P32/19—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Compositions (AREA)
DE19671644003 1967-04-20 1967-04-20 Verfahren zum Dotieren von Halbleiterkristallen Pending DE1644003A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0109426 1967-04-20

Publications (1)

Publication Number Publication Date
DE1644003A1 true DE1644003A1 (de) 1970-09-24

Family

ID=7529513

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19671644003 Pending DE1644003A1 (de) 1967-04-20 1967-04-20 Verfahren zum Dotieren von Halbleiterkristallen

Country Status (5)

Country Link
US (1) US3540951A (enExample)
DE (1) DE1644003A1 (enExample)
FR (1) FR1569941A (enExample)
GB (1) GB1170709A (enExample)
NL (1) NL6801367A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660156A (en) * 1970-08-19 1972-05-02 Monsanto Co Semiconductor doping compositions
US3658584A (en) * 1970-09-21 1972-04-25 Monsanto Co Semiconductor doping compositions
US3841927A (en) * 1972-11-10 1974-10-15 Owens Illinois Inc Aluminum metaphosphate source body for doping silicon
US3962000A (en) * 1974-01-07 1976-06-08 Owens-Illinois, Inc. Barium aluminoborosilicate glass-ceramics for semiconductor doping
US3928096A (en) * 1974-01-07 1975-12-23 Owens Illinois Inc Boron doping of semiconductors
US3954525A (en) * 1974-08-26 1976-05-04 The Carborundum Company Hot-pressed solid diffusion sources for phosphorus
US3931056A (en) * 1974-08-26 1976-01-06 The Carborundum Company Solid diffusion sources for phosphorus doping containing silicon and zirconium pyrophosphates
DE102014109179B4 (de) * 2014-07-01 2023-09-14 Universität Konstanz Verfahren zum Erzeugen von unterschiedlich dotierten Bereichen in einem Siliziumsubstrat, insbesondere für eine Solarzelle, und Solarzelle mit diesen unterschiedlich dotierten Bereichen

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE636317A (enExample) * 1962-08-23 1900-01-01

Also Published As

Publication number Publication date
GB1170709A (en) 1969-11-12
US3540951A (en) 1970-11-17
NL6801367A (enExample) 1968-10-21
FR1569941A (enExample) 1969-04-28

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