GB1153372A - Improvements in or relating to Methods of Heat Treating Semiconductor Bodies. - Google Patents

Improvements in or relating to Methods of Heat Treating Semiconductor Bodies.

Info

Publication number
GB1153372A
GB1153372A GB2770366A GB2770366A GB1153372A GB 1153372 A GB1153372 A GB 1153372A GB 2770366 A GB2770366 A GB 2770366A GB 2770366 A GB2770366 A GB 2770366A GB 1153372 A GB1153372 A GB 1153372A
Authority
GB
United Kingdom
Prior art keywords
heat treating
plug
relating
methods
silica
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2770366A
Inventor
John George Wilkes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASSOCIATED SEMICONDUCTOR MFT
Original Assignee
ASSOCIATED SEMICONDUCTOR MFT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASSOCIATED SEMICONDUCTOR MFT filed Critical ASSOCIATED SEMICONDUCTOR MFT
Priority to GB2770366A priority Critical patent/GB1153372A/en
Publication of GB1153372A publication Critical patent/GB1153372A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

1,153,372. Muffles. ASSOCIATED SEMICONDUCTOR MFG. Ltd. 21 June, 1966, No. 27703/66. Heading F4B. [Also in Division H1] A muffle for heat treating semi-conductors, through which oxygen flows in the direction of the arrows for the oxidation of a silicon slice carried in a small silica tube 11, comprises coaxial silica tubes 1 and 3 sealed together at 6 and connected by three supports 7, a gas inlet 2, a gas outlet 5, a plug 8 with a conical port 9 for fitting into a conical socket 4, and a silica rod 10 mounted in the plug 8 and carrying the tube 11 and a thermocouple 12. The entire muffle is placed within an electrical heating element and suitable insulations. Germanium may be heat-treated in an Argon atmosphere in a similar furnace.
GB2770366A 1966-06-21 1966-06-21 Improvements in or relating to Methods of Heat Treating Semiconductor Bodies. Expired GB1153372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2770366A GB1153372A (en) 1966-06-21 1966-06-21 Improvements in or relating to Methods of Heat Treating Semiconductor Bodies.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2770366A GB1153372A (en) 1966-06-21 1966-06-21 Improvements in or relating to Methods of Heat Treating Semiconductor Bodies.

Publications (1)

Publication Number Publication Date
GB1153372A true GB1153372A (en) 1969-05-29

Family

ID=10263923

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2770366A Expired GB1153372A (en) 1966-06-21 1966-06-21 Improvements in or relating to Methods of Heat Treating Semiconductor Bodies.

Country Status (1)

Country Link
GB (1) GB1153372A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0062174A1 (en) * 1981-04-06 1982-10-13 International Business Machines Corporation Apparatus treating specimens at raised temperatures
GB2139744A (en) * 1983-05-12 1984-11-14 Norton Co Apparatus for firing semiconductor elements

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0062174A1 (en) * 1981-04-06 1982-10-13 International Business Machines Corporation Apparatus treating specimens at raised temperatures
GB2139744A (en) * 1983-05-12 1984-11-14 Norton Co Apparatus for firing semiconductor elements

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees