GB1145879A - Semiconductor device fabrication - Google Patents

Semiconductor device fabrication

Info

Publication number
GB1145879A
GB1145879A GB21727/66A GB2172766A GB1145879A GB 1145879 A GB1145879 A GB 1145879A GB 21727/66 A GB21727/66 A GB 21727/66A GB 2172766 A GB2172766 A GB 2172766A GB 1145879 A GB1145879 A GB 1145879A
Authority
GB
United Kingdom
Prior art keywords
wafer
gate electrode
layer
oxide layer
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21727/66A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB1145879A publication Critical patent/GB1145879A/en
Expired legal-status Critical Current

Links

Classifications

    • H10W20/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/6309—
    • H10P14/6322—
    • H10P95/00—
    • H10W72/90—
    • H10W72/07554—
    • H10W72/5363—
    • H10W72/547—
    • H10W72/59—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/92—Controlling diffusion profile by oxidation

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
GB21727/66A 1965-05-28 1966-05-16 Semiconductor device fabrication Expired GB1145879A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US459709A US3411199A (en) 1965-05-28 1965-05-28 Semiconductor device fabrication

Publications (1)

Publication Number Publication Date
GB1145879A true GB1145879A (en) 1969-03-19

Family

ID=23825857

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21727/66A Expired GB1145879A (en) 1965-05-28 1966-05-16 Semiconductor device fabrication

Country Status (5)

Country Link
US (1) US3411199A (cg-RX-API-DMAC10.html)
DE (1) DE1564528A1 (cg-RX-API-DMAC10.html)
ES (1) ES327183A1 (cg-RX-API-DMAC10.html)
GB (1) GB1145879A (cg-RX-API-DMAC10.html)
NL (1) NL140363B (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2154366A (en) * 1984-01-06 1985-09-04 Texas Instruments Ltd Field effect transistors
US4575746A (en) * 1983-11-28 1986-03-11 Rca Corporation Crossunders for high density SOS integrated circuits

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3534235A (en) * 1967-04-17 1970-10-13 Hughes Aircraft Co Igfet with offset gate and biconductivity channel region
US3590477A (en) * 1968-12-19 1971-07-06 Ibm Method for fabricating insulated-gate field effect transistors having controlled operating characeristics
US3636617A (en) * 1970-03-23 1972-01-25 Monsanto Co Method for fabricating monolithic light-emitting semiconductor diodes and arrays thereof
FR2123179B1 (cg-RX-API-DMAC10.html) * 1971-01-28 1974-02-15 Commissariat Energie Atomique
US3807039A (en) * 1971-04-05 1974-04-30 Rca Corp Method for making a radio frequency transistor structure
US7750654B2 (en) * 2002-09-02 2010-07-06 Octec Inc. Probe method, prober, and electrode reducing/plasma-etching processing mechanism

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL265382A (cg-RX-API-DMAC10.html) * 1960-03-08
US3183129A (en) * 1960-10-14 1965-05-11 Fairchild Camera Instr Co Method of forming a semiconductor
US3193418A (en) * 1960-10-27 1965-07-06 Fairchild Camera Instr Co Semiconductor device fabrication
US3203840A (en) * 1961-12-14 1965-08-31 Texas Insutruments Inc Diffusion method
NL297002A (cg-RX-API-DMAC10.html) * 1962-08-23 1900-01-01

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4575746A (en) * 1983-11-28 1986-03-11 Rca Corporation Crossunders for high density SOS integrated circuits
GB2154366A (en) * 1984-01-06 1985-09-04 Texas Instruments Ltd Field effect transistors

Also Published As

Publication number Publication date
US3411199A (en) 1968-11-19
ES327183A1 (es) 1967-03-16
DE1564528A1 (de) 1970-01-22
NL6607399A (cg-RX-API-DMAC10.html) 1966-11-29
NL140363B (nl) 1973-11-15

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