GB1127436A - Improvements in and relating to methods of detecting radiation - Google Patents

Improvements in and relating to methods of detecting radiation

Info

Publication number
GB1127436A
GB1127436A GB43212/65A GB4321265A GB1127436A GB 1127436 A GB1127436 A GB 1127436A GB 43212/65 A GB43212/65 A GB 43212/65A GB 4321265 A GB4321265 A GB 4321265A GB 1127436 A GB1127436 A GB 1127436A
Authority
GB
United Kingdom
Prior art keywords
centres
radiation
source
current
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB43212/65A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1127436A publication Critical patent/GB1127436A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
GB43212/65A 1964-10-15 1965-10-12 Improvements in and relating to methods of detecting radiation Expired GB1127436A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6411983A NL6411983A (enExample) 1964-10-15 1964-10-15

Publications (1)

Publication Number Publication Date
GB1127436A true GB1127436A (en) 1968-09-18

Family

ID=19791243

Family Applications (1)

Application Number Title Priority Date Filing Date
GB43212/65A Expired GB1127436A (en) 1964-10-15 1965-10-12 Improvements in and relating to methods of detecting radiation

Country Status (6)

Country Link
US (1) US3470379A (enExample)
BE (1) BE671002A (enExample)
DE (1) DE1260042B (enExample)
ES (1) ES318441A1 (enExample)
GB (1) GB1127436A (enExample)
NL (1) NL6411983A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2046865B1 (enExample) * 1969-06-18 1973-01-12 Semiconductor Res Found
JPS61239678A (ja) * 1985-04-16 1986-10-24 Mitsubishi Electric Corp 光電変換装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE211836C (enExample) *
DE863535C (de) * 1940-08-25 1953-01-19 Patra Patent Treuhand Verfahren zur Beeinflussung des photoelektrischen Widerstandes von Halbleiter-Leuchtstoffen
US2706790A (en) * 1950-10-18 1955-04-19 Gen Electric X-ray detection
NL254366A (enExample) * 1959-08-29
US3043958A (en) * 1959-09-14 1962-07-10 Philips Corp Circuit element
NL260956A (enExample) * 1961-02-07

Also Published As

Publication number Publication date
NL6411983A (enExample) 1966-04-18
ES318441A1 (es) 1966-05-01
DE1260042B (de) 1968-02-01
BE671002A (enExample) 1966-04-15
US3470379A (en) 1969-09-30

Similar Documents

Publication Publication Date Title
GB992003A (en) Semiconductor devices
GB1174899A (en) Improvements relating to Controllable Rectifier Devices
US3209154A (en) Light responsive system including load circuit with solid state switch
GB906036A (en) Improvements in or relating to semi-conductor devices
GB1079813A (en) Coupled lasers
GB1234434A (enExample)
JPS512393A (enExample)
GB1127436A (en) Improvements in and relating to methods of detecting radiation
GB1144298A (en) Radiation detector
GB1218666A (en) A diode
GB1190185A (en) Light Sensitive Circuit Arrangements
GB1045478A (en) Apparatus exhibiting stimulated emission of radiation b
GB1477513A (en) Unidirectional thyristors
GB1214180A (en) Semiconductor devices
GB1087274A (en) Improvements in and relating to methods of detecting radiation
JPS52133761A (en) Integrated circuit
GB1022722A (en) Semiconductor laser operated coincidence device
GB1096734A (en) Improvements in semiconductor arrangements
GB1096735A (en) Improvements in or relating to opto-electronic circuit elements
GB1469005A (en) Standard telephones cables ltd semiconductor device manufacture
FR2406895A1 (fr) Photodiode a avalanche comportant une homojonction en alliage gay in1-y asx p1-x et recepteur de telecommunications optiques comportant une telle photodiode
GB1301929A (enExample)
JPS5428581A (en) Manufacture of semiconductor device
GADDY et al. Location of the source of recombination radiation in ga/as sub l-x p sub x/ p-n junctions by electron bombardment(Location of source of recombination radiation in gallium-arsenic-phosphide p-n junctions by free electron bombardment)
US5274252A (en) Linearizing emitted light intensity from a light-emitting device