GB1096735A - Improvements in or relating to opto-electronic circuit elements - Google Patents
Improvements in or relating to opto-electronic circuit elementsInfo
- Publication number
- GB1096735A GB1096735A GB5536/65A GB553665A GB1096735A GB 1096735 A GB1096735 A GB 1096735A GB 5536/65 A GB5536/65 A GB 5536/65A GB 553665 A GB553665 A GB 553665A GB 1096735 A GB1096735 A GB 1096735A
- Authority
- GB
- United Kingdom
- Prior art keywords
- source
- radiation
- detector
- alloyed
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005693 optoelectronics Effects 0.000 title abstract 2
- 230000005855 radiation Effects 0.000 abstract 11
- 239000004065 semiconductor Substances 0.000 abstract 6
- 230000007704 transition Effects 0.000 abstract 5
- 229910052760 oxygen Inorganic materials 0.000 abstract 3
- 230000006798 recombination Effects 0.000 abstract 3
- 238000005215 recombination Methods 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 238000001953 recrystallisation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
<PICT:1096735/C4-C5/1> <PICT:1096735/C4-C5/2> An opto-electronic circuit element 215, Fig. 1, comprises a first recombination radiation source 201 irradiating a photo-sensitive semi-conductor 202, and a second radiation source 205, whereby the effect of the first source on the semi-conductor 202 may be controlled. The second source either irradiates the semi-conductor 202 or a filter 206. The circuit element may be used for amplifying or logic applications. Embodiments in which both sources irradiate the detector.-The detector is a block 1, Fig. 2, of oxygen doped N-type GaP or AlP with a P region 3 of Zn diffused in to form a P-N junction 4. The contacts 5 and 6 alloyed to the P and N region are respectively Au + 4% w/w Zn and Sn. This detector has an energy level intermediate the valence and conduction bands. The source 10 of radiation which is only capable of causing the transition from the valence band to the intermediate level, comprises a GaAs or InP body 11 which is of N-type and has an alloyed contact 12 of In with 3% w/w Zn to form a recrystallized P region 14. The contact 18 is of alloyed Sn. The source 20 of radiation capable of causing the larger transition from the intermediate level to the conduction band comprises a block of P type GaP doped with Zn and O. An Sn contact is alloyed in to the block to form a recrystallized N region 24, the ohmic contact 23 being of alloyed Au + 4% w/w Zn. In the embodiment of Fig. 4 (not shown), the radiation source 20 and the detector 1 may be formed in the same semi-conductor body, the contacts 15 and 23 being replaced by a single contact, and in Fig. 6 (not shown) all three components are formed in a single unit by vapour depositing GaAs on GaP. Contacts 6 and 13 are then common. In the embodiment of Fig. 7 (not shown), the detector comprises P type GaP doped with Cu. The N region 83 is formed by recrystallization when the Sn contact 84 is alloyed in. The contact of 86 is of alloyed Au + 4% w/w Zn. This detector has an acceptor level between the valence and conduction bands which has little effect on the recombination of minority carriers produced by radiation from source 90 by band to band transitions. Radiation from source 100 lifts electrons from the valence band to the acceptor level providing holes which reduce the minority carrier lifetime, and by this means source 100 controls the response of the detector to source 90. The sources 90 and 100 are similar to source 20 except that for source 90 GaP is doped with Zn only. The light sources may be operated as injection recombination lasers and may be combined with the detector in a single semi-conductor body. Embodiments in which the filter is used.-The filter may comprise GaP doped with Zn and O to produce an intermediate level between the valence and conduction bands. If then the radiation from source 200 is capable of effecting only the transition to or from the intermediate level, radiation from the source 204 which is capable of effecting the other transition will increase the absorption of radiation from source 200. If the intermediate level is normally full, the sources are interchanged so that when source 200 empties the intermediate level, radiation from source 204 is absorbed in refilling it. The surface of the semi-conductor bodies may have anti-reflection coatings.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6401188A NL6401188A (en) | 1964-02-12 | 1964-02-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1096735A true GB1096735A (en) | 1967-12-29 |
Family
ID=19789261
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5536/65A Expired GB1096735A (en) | 1964-02-12 | 1965-02-09 | Improvements in or relating to opto-electronic circuit elements |
Country Status (5)
Country | Link |
---|---|
BE (1) | BE659705A (en) |
DE (1) | DE1514242A1 (en) |
ES (1) | ES309186A1 (en) |
GB (1) | GB1096735A (en) |
NL (1) | NL6401188A (en) |
-
1964
- 1964-02-12 NL NL6401188A patent/NL6401188A/xx unknown
-
1965
- 1965-02-09 DE DE19651514242 patent/DE1514242A1/en active Pending
- 1965-02-09 GB GB5536/65A patent/GB1096735A/en not_active Expired
- 1965-02-10 ES ES0309186A patent/ES309186A1/en not_active Expired
- 1965-02-12 BE BE659705A patent/BE659705A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
ES309186A1 (en) | 1965-05-16 |
DE1514242A1 (en) | 1969-06-19 |
BE659705A (en) | 1965-08-12 |
NL6401188A (en) | 1965-08-13 |
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