GB1087274A - Improvements in and relating to methods of detecting radiation - Google Patents
Improvements in and relating to methods of detecting radiationInfo
- Publication number
- GB1087274A GB1087274A GB5534/65A GB553465A GB1087274A GB 1087274 A GB1087274 A GB 1087274A GB 5534/65 A GB5534/65 A GB 5534/65A GB 553465 A GB553465 A GB 553465A GB 1087274 A GB1087274 A GB 1087274A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- transitions
- photons
- source
- photosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005855 radiation Effects 0.000 title abstract 3
- 230000007704 transition Effects 0.000 abstract 4
- 229910005540 GaP Inorganic materials 0.000 abstract 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 2
- 239000008188 pellet Substances 0.000 abstract 2
- 229910052725 zinc Inorganic materials 0.000 abstract 2
- 239000011701 zinc Substances 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
1,087,274. Photo-cells. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. Feb. 9, 1965 [Feb. 12, 1964], No. 5534/65. Heading H1K. A radiation detector consists of a photosensitive semi-conductor body with an intermediate energy level in the forbidden gap through which electrons can be raised from the valence to the conduction band in two transitions, associated with a source of photons capable of causing one of the transitions but of insufficient energy to cause direct transitions. Radiation to be detected has to include photons able to cause the other transition. In a typical arrangement the photon source and photosensitive body are included in a common P-type gallium phosphide body 1 (Fig. 4) by alloying tin pellets 6, 23 to it to form PN junctions. An ohmic contact is formed simultaneously by a zinc doped gold pellet 8 alloyed to the body in 1 second at 400-700‹ C. Alternatively the junction 25 providing the photons may be in a separate body. In this case the junction may be formed in the same way or by alloying zincdoped indium and tin to N-type gallium arsenide or indium phosphide to form the PN junction and ohmic contact respectively, though the junction may also be formed by zinc diffusion. In either case, the body may be formed on the gallium phosphide body by epitaxial deposition. Another possibility is to form photon source and detector junction on opposed faces of a base body by diffusion or epitaxial deposition. The source, which may also be a tungsten lamp with a monochromatic interference filter, and the photosensitive body, which need not include a PN junction, are preferably mounted in a common housing.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL646401187A NL144092B (en) | 1964-02-12 | 1964-02-12 | DEVICE FOR RADIATION DETECTION. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1087274A true GB1087274A (en) | 1967-10-18 |
Family
ID=19789260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5534/65A Expired GB1087274A (en) | 1964-02-12 | 1965-02-09 | Improvements in and relating to methods of detecting radiation |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS4748038B1 (en) |
| AT (1) | AT256181B (en) |
| BE (1) | BE659704A (en) |
| DE (1) | DE1275215B (en) |
| ES (1) | ES309185A1 (en) |
| FR (1) | FR1428644A (en) |
| GB (1) | GB1087274A (en) |
| NL (1) | NL144092B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110869810A (en) * | 2017-02-28 | 2020-03-06 | 萨塞克斯大学 | X-ray and gamma-ray photodiodes |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE863535C (en) * | 1940-08-25 | 1953-01-19 | Patra Patent Treuhand | Process for influencing the photoelectric resistance of semiconductor phosphors |
-
1964
- 1964-02-12 NL NL646401187A patent/NL144092B/en unknown
-
1965
- 1965-02-09 JP JP686765A patent/JPS4748038B1/ja active Pending
- 1965-02-09 AT AT113565A patent/AT256181B/en active
- 1965-02-09 GB GB5534/65A patent/GB1087274A/en not_active Expired
- 1965-02-09 DE DEN26190A patent/DE1275215B/en active Pending
- 1965-02-10 ES ES0309185A patent/ES309185A1/en not_active Expired
- 1965-02-12 BE BE659704A patent/BE659704A/xx unknown
- 1965-02-12 FR FR5436A patent/FR1428644A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110869810A (en) * | 2017-02-28 | 2020-03-06 | 萨塞克斯大学 | X-ray and gamma-ray photodiodes |
| CN110869810B (en) * | 2017-02-28 | 2023-12-15 | 萨塞克斯大学 | X-ray and gamma-ray photodiodes |
Also Published As
| Publication number | Publication date |
|---|---|
| NL144092B (en) | 1974-11-15 |
| FR1428644A (en) | 1966-02-18 |
| JPS4748038B1 (en) | 1972-12-04 |
| DE1275215B (en) | 1968-08-14 |
| BE659704A (en) | 1965-08-12 |
| NL6401187A (en) | 1965-08-13 |
| ES309185A1 (en) | 1965-05-16 |
| AT256181B (en) | 1967-08-10 |
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