GB1087274A - Improvements in and relating to methods of detecting radiation - Google Patents

Improvements in and relating to methods of detecting radiation

Info

Publication number
GB1087274A
GB1087274A GB5534/65A GB553465A GB1087274A GB 1087274 A GB1087274 A GB 1087274A GB 5534/65 A GB5534/65 A GB 5534/65A GB 553465 A GB553465 A GB 553465A GB 1087274 A GB1087274 A GB 1087274A
Authority
GB
United Kingdom
Prior art keywords
junction
transitions
photons
source
photosensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5534/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1087274A publication Critical patent/GB1087274A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

1,087,274. Photo-cells. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. Feb. 9, 1965 [Feb. 12, 1964], No. 5534/65. Heading H1K. A radiation detector consists of a photosensitive semi-conductor body with an intermediate energy level in the forbidden gap through which electrons can be raised from the valence to the conduction band in two transitions, associated with a source of photons capable of causing one of the transitions but of insufficient energy to cause direct transitions. Radiation to be detected has to include photons able to cause the other transition. In a typical arrangement the photon source and photosensitive body are included in a common P-type gallium phosphide body 1 (Fig. 4) by alloying tin pellets 6, 23 to it to form PN junctions. An ohmic contact is formed simultaneously by a zinc doped gold pellet 8 alloyed to the body in 1 second at 400-700‹ C. Alternatively the junction 25 providing the photons may be in a separate body. In this case the junction may be formed in the same way or by alloying zincdoped indium and tin to N-type gallium arsenide or indium phosphide to form the PN junction and ohmic contact respectively, though the junction may also be formed by zinc diffusion. In either case, the body may be formed on the gallium phosphide body by epitaxial deposition. Another possibility is to form photon source and detector junction on opposed faces of a base body by diffusion or epitaxial deposition. The source, which may also be a tungsten lamp with a monochromatic interference filter, and the photosensitive body, which need not include a PN junction, are preferably mounted in a common housing.
GB5534/65A 1964-02-12 1965-02-09 Improvements in and relating to methods of detecting radiation Expired GB1087274A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL646401187A NL144092B (en) 1964-02-12 1964-02-12 DEVICE FOR RADIATION DETECTION.

Publications (1)

Publication Number Publication Date
GB1087274A true GB1087274A (en) 1967-10-18

Family

ID=19789260

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5534/65A Expired GB1087274A (en) 1964-02-12 1965-02-09 Improvements in and relating to methods of detecting radiation

Country Status (8)

Country Link
JP (1) JPS4748038B1 (en)
AT (1) AT256181B (en)
BE (1) BE659704A (en)
DE (1) DE1275215B (en)
ES (1) ES309185A1 (en)
FR (1) FR1428644A (en)
GB (1) GB1087274A (en)
NL (1) NL144092B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110869810A (en) * 2017-02-28 2020-03-06 萨塞克斯大学 X-ray and gamma-ray photodiodes

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE863535C (en) * 1940-08-25 1953-01-19 Patra Patent Treuhand Process for influencing the photoelectric resistance of semiconductor phosphors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110869810A (en) * 2017-02-28 2020-03-06 萨塞克斯大学 X-ray and gamma-ray photodiodes
CN110869810B (en) * 2017-02-28 2023-12-15 萨塞克斯大学 X-ray and gamma-ray photodiodes

Also Published As

Publication number Publication date
NL144092B (en) 1974-11-15
FR1428644A (en) 1966-02-18
JPS4748038B1 (en) 1972-12-04
DE1275215B (en) 1968-08-14
BE659704A (en) 1965-08-12
NL6401187A (en) 1965-08-13
ES309185A1 (en) 1965-05-16
AT256181B (en) 1967-08-10

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