GB1126104A - Crucible-free zone-by-zone melting processes - Google Patents

Crucible-free zone-by-zone melting processes

Info

Publication number
GB1126104A
GB1126104A GB25186/66A GB2518666A GB1126104A GB 1126104 A GB1126104 A GB 1126104A GB 25186/66 A GB25186/66 A GB 25186/66A GB 2518666 A GB2518666 A GB 2518666A GB 1126104 A GB1126104 A GB 1126104A
Authority
GB
United Kingdom
Prior art keywords
zone
coupling
rod
crucible
june
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB25186/66A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Publication of GB1126104A publication Critical patent/GB1126104A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
GB25186/66A 1965-06-04 1966-06-06 Crucible-free zone-by-zone melting processes Expired GB1126104A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0097473 1965-06-04

Publications (1)

Publication Number Publication Date
GB1126104A true GB1126104A (en) 1968-09-05

Family

ID=7520765

Family Applications (1)

Application Number Title Priority Date Filing Date
GB25186/66A Expired GB1126104A (en) 1965-06-04 1966-06-06 Crucible-free zone-by-zone melting processes

Country Status (6)

Country Link
US (1) US3454368A (enrdf_load_stackoverflow)
BE (1) BE681815A (enrdf_load_stackoverflow)
CH (1) CH432475A (enrdf_load_stackoverflow)
DE (1) DE1519872A1 (enrdf_load_stackoverflow)
GB (1) GB1126104A (enrdf_load_stackoverflow)
NL (1) NL6607745A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5217565A (en) * 1991-11-13 1993-06-08 Wisconsin Alumni Research Foundation Contactless heater floating zone refining and crystal growth
CN107366017A (zh) * 2017-09-04 2017-11-21 青海鑫诺光电科技有限公司 一种单晶硅收尾设备及其使用方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA629412A (en) * 1961-10-17 Union Carbide Corporation Method of and apparatus for growing single crystal material
US2743200A (en) * 1954-05-27 1956-04-24 Bell Telephone Labor Inc Method of forming junctions in silicon
US2989378A (en) * 1956-10-16 1961-06-20 Int Standard Electric Corp Producing silicon of high purity
US2870309A (en) * 1957-06-11 1959-01-20 Emil R Capita Zone purification device
GB904100A (en) * 1959-09-11 1962-08-22 Siemens Ag A process for zone-by-zone melting of a rod of semi-conductor material using an induction coil as the heating means and an automatic arrangement for controlling the current through the coil

Also Published As

Publication number Publication date
NL6607745A (enrdf_load_stackoverflow) 1966-12-05
BE681815A (enrdf_load_stackoverflow) 1966-11-30
US3454368A (en) 1969-07-08
CH432475A (de) 1967-03-31
DE1519872B2 (enrdf_load_stackoverflow) 1971-10-21
DE1519872A1 (de) 1969-04-10

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