GB1013824A - Improvements in or relating to processes involving the melting of semiconductor materials - Google Patents

Improvements in or relating to processes involving the melting of semiconductor materials

Info

Publication number
GB1013824A
GB1013824A GB8362A GB8362A GB1013824A GB 1013824 A GB1013824 A GB 1013824A GB 8362 A GB8362 A GB 8362A GB 8362 A GB8362 A GB 8362A GB 1013824 A GB1013824 A GB 1013824A
Authority
GB
United Kingdom
Prior art keywords
crucible
melting
relating
semiconductor materials
processes involving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8362A
Inventor
John George Wilkes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB8362A priority Critical patent/GB1013824A/en
Publication of GB1013824A publication Critical patent/GB1013824A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,013,824. Crystal - pulling. GENERAL ELECTRIC CO. Ltd. March 1, 1963 [Jan. 1, 1962], No. 83/62. Heading BIS. Semi-conductor material, e.g. germanium, is melted in a graphite crucible 1, formed in the side wall with an unobstructed feed passage 3 opening by a rectangular passage 5 below the surface of the melt. Molybdenum slugs 7 closed in wall cavities 6 by graphite plugs 8 and a small discharge passage 2 in the shallow conical base enable the crucible to be floated on molten germanium in a second crucible, Fig. 3 (not shown), and to be used for the production of a single crystal as disclosed in Specification 1,011,973.
GB8362A 1962-01-01 1962-01-01 Improvements in or relating to processes involving the melting of semiconductor materials Expired GB1013824A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8362A GB1013824A (en) 1962-01-01 1962-01-01 Improvements in or relating to processes involving the melting of semiconductor materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8362A GB1013824A (en) 1962-01-01 1962-01-01 Improvements in or relating to processes involving the melting of semiconductor materials

Publications (1)

Publication Number Publication Date
GB1013824A true GB1013824A (en) 1965-12-22

Family

ID=9698121

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8362A Expired GB1013824A (en) 1962-01-01 1962-01-01 Improvements in or relating to processes involving the melting of semiconductor materials

Country Status (1)

Country Link
GB (1) GB1013824A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991017290A1 (en) * 1990-04-27 1991-11-14 Nkk Corporation Silicon single crystal manufacturing apparatus
CN116377561A (en) * 2023-01-03 2023-07-04 有研国晶辉新材料有限公司 Method for removing germanium single crystal melt scum and device for removing germanium single crystal melt scum

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991017290A1 (en) * 1990-04-27 1991-11-14 Nkk Corporation Silicon single crystal manufacturing apparatus
US5279798A (en) * 1990-04-27 1994-01-18 Nkk Corporation Silicon single crystal manufacturing apparatus
CN116377561A (en) * 2023-01-03 2023-07-04 有研国晶辉新材料有限公司 Method for removing germanium single crystal melt scum and device for removing germanium single crystal melt scum
CN116377561B (en) * 2023-01-03 2024-02-13 有研国晶辉新材料有限公司 Method for removing germanium single crystal melt scum and device for removing germanium single crystal melt scum

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