GB1109123A - Deposition of crystalline semiconductive layer on insulating substrate - Google Patents
Deposition of crystalline semiconductive layer on insulating substrateInfo
- Publication number
- GB1109123A GB1109123A GB1672065A GB1672065A GB1109123A GB 1109123 A GB1109123 A GB 1109123A GB 1672065 A GB1672065 A GB 1672065A GB 1672065 A GB1672065 A GB 1672065A GB 1109123 A GB1109123 A GB 1109123A
- Authority
- GB
- United Kingdom
- Prior art keywords
- deposition
- insulating substrate
- semiconductive layer
- hydrogen
- sapphire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title abstract 2
- 230000008021 deposition Effects 0.000 title 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract 4
- 239000001257 hydrogen Substances 0.000 abstract 4
- 229910052594 sapphire Inorganic materials 0.000 abstract 3
- 239000010980 sapphire Substances 0.000 abstract 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 229910000077 silane Inorganic materials 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US36322864A | 1964-04-28 | 1964-04-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1109123A true GB1109123A (en) | 1968-04-10 |
Family
ID=23429361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1672065A Expired GB1109123A (en) | 1964-04-28 | 1965-04-21 | Deposition of crystalline semiconductive layer on insulating substrate |
Country Status (5)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0194652A1 (en) * | 1985-03-13 | 1986-09-17 | Shin-Etsu Chemical Co., Ltd. | Coated blade for microtome and method for the preparation thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2438892A (en) * | 1943-07-28 | 1948-04-06 | Bell Telephone Labor Inc | Electrical translating materials and devices and methods of making them |
| DE1042553B (de) * | 1953-09-25 | 1958-11-06 | Int Standard Electric Corp | Verfahren zur Herstellung von Silicium grosser Reinheit |
| DE1072815B (de) * | 1956-10-01 | 1960-01-07 | Societe Anonyme des Manufactures des Glaces et Produits Chimiques de Saint-Gobain, Chauny &. Grey, Paris | Verfahren zur Herstellung von Metal'len und anderen chemischen Elementen metallischen Charakters von hohem Reinheitsgrad |
-
0
- BE BE663145D patent/BE663145A/xx unknown
-
1965
- 1965-04-21 GB GB1672065A patent/GB1109123A/en not_active Expired
- 1965-04-24 DE DE1965R0040459 patent/DE1283074B/de active Pending
- 1965-04-26 FR FR14640A patent/FR1433733A/fr not_active Expired
- 1965-04-27 NL NL6505356A patent/NL6505356A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0194652A1 (en) * | 1985-03-13 | 1986-09-17 | Shin-Etsu Chemical Co., Ltd. | Coated blade for microtome and method for the preparation thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1433733A (fr) | 1966-04-01 |
| DE1283074B (de) | 1968-11-14 |
| NL6505356A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1965-10-29 |
| BE663145A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
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