GB1109123A - Deposition of crystalline semiconductive layer on insulating substrate - Google Patents

Deposition of crystalline semiconductive layer on insulating substrate

Info

Publication number
GB1109123A
GB1109123A GB1672065A GB1672065A GB1109123A GB 1109123 A GB1109123 A GB 1109123A GB 1672065 A GB1672065 A GB 1672065A GB 1672065 A GB1672065 A GB 1672065A GB 1109123 A GB1109123 A GB 1109123A
Authority
GB
United Kingdom
Prior art keywords
deposition
insulating substrate
semiconductive layer
hydrogen
sapphire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1672065A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB1109123A publication Critical patent/GB1109123A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Silicon is deposited on a sapphire substrate by flowing silane over the sapphire whilst it is heated to 1000 to 1150 DEG C. The surface of the sapphire may be cleaned by heating to 1250 DEG C. in hydrogen. The silane may be mixed with hydrogen. Boron or phosphorus may be deposited simultaneously using a diborane hydrogen mixture or phosphine hydrogen mixture respectively. The reaction takes place in a quartz tube heated by an R. F. coil.
GB1672065A 1964-04-28 1965-04-21 Deposition of crystalline semiconductive layer on insulating substrate Expired GB1109123A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36322864A 1964-04-28 1964-04-28

Publications (1)

Publication Number Publication Date
GB1109123A true GB1109123A (en) 1968-04-10

Family

ID=23429361

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1672065A Expired GB1109123A (en) 1964-04-28 1965-04-21 Deposition of crystalline semiconductive layer on insulating substrate

Country Status (5)

Country Link
BE (1) BE663145A (en)
DE (1) DE1283074B (en)
FR (1) FR1433733A (en)
GB (1) GB1109123A (en)
NL (1) NL6505356A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0194652A1 (en) * 1985-03-13 1986-09-17 Shin-Etsu Chemical Co., Ltd. Coated blade for microtome and method for the preparation thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2438892A (en) * 1943-07-28 1948-04-06 Bell Telephone Labor Inc Electrical translating materials and devices and methods of making them
DE1042553B (en) * 1953-09-25 1958-11-06 Int Standard Electric Corp Process for the production of high purity silicon
BE561214A (en) * 1956-10-01

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0194652A1 (en) * 1985-03-13 1986-09-17 Shin-Etsu Chemical Co., Ltd. Coated blade for microtome and method for the preparation thereof

Also Published As

Publication number Publication date
BE663145A (en)
FR1433733A (en) 1966-04-01
NL6505356A (en) 1965-10-29
DE1283074B (en) 1968-11-14

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