GB1096925A - Method of depositing oxide film - Google Patents
Method of depositing oxide filmInfo
- Publication number
- GB1096925A GB1096925A GB27641/65A GB2764165A GB1096925A GB 1096925 A GB1096925 A GB 1096925A GB 27641/65 A GB27641/65 A GB 27641/65A GB 2764165 A GB2764165 A GB 2764165A GB 1096925 A GB1096925 A GB 1096925A
- Authority
- GB
- United Kingdom
- Prior art keywords
- isopropylate
- ethoxide
- substrate
- sputtering
- volatile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000151 deposition Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- HHFAWKCIHAUFRX-UHFFFAOYSA-N ethoxide Chemical compound CC[O-] HHFAWKCIHAUFRX-UHFFFAOYSA-N 0.000 abstract 4
- LMHHRCOWPQNFTF-UHFFFAOYSA-N s-propan-2-yl azepane-1-carbothioate Chemical compound CC(C)SC(=O)N1CCCCCC1 LMHHRCOWPQNFTF-UHFFFAOYSA-N 0.000 abstract 4
- 238000004544 sputter deposition Methods 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- -1 B isopropylate Chemical class 0.000 abstract 2
- 229910000831 Steel Inorganic materials 0.000 abstract 2
- 150000004703 alkoxides Chemical class 0.000 abstract 2
- 229920000180 alkyd Polymers 0.000 abstract 2
- 230000005587 bubbling Effects 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 2
- OGHBATFHNDZKSO-UHFFFAOYSA-N propan-2-olate Chemical compound CC(C)[O-] OGHBATFHNDZKSO-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000005368 silicate glass Substances 0.000 abstract 2
- 239000010959 steel Substances 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/02—Surface treatment of glass, not in the form of fibres or filaments, by coating with glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C1/00—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/08—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances quartz; glass; glass wool; slag wool; vitreous enamels
- H01B3/088—Shaping of glass or deposition of glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02145—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US37914064A | 1964-06-30 | 1964-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1096925A true GB1096925A (en) | 1967-12-29 |
Family
ID=23495981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB27641/65A Expired GB1096925A (en) | 1964-06-30 | 1965-06-30 | Method of depositing oxide film |
Country Status (2)
| Country | Link |
|---|---|
| GB (1) | GB1096925A (enrdf_load_stackoverflow) |
| NL (1) | NL6507670A (enrdf_load_stackoverflow) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2416439A1 (fr) * | 1978-01-31 | 1979-08-31 | Blinov Viktor | Four electrique pour le traitement et le durcissement chimico-thermique de produits a l'aide d'une decharge luminescente |
| GB2132636A (en) * | 1982-10-12 | 1984-07-11 | Secr Defence | Glow discharge coating method |
| WO1986000650A1 (en) * | 1984-07-11 | 1986-01-30 | Battelle-Institut E.V. | Method for the preparation of gold-coloured titanium nitride layers |
| GB2181461A (en) * | 1985-10-10 | 1987-04-23 | Canadian Patents Dev | Depositing semiconductor compounds by reactive sputtering |
| US5665210A (en) * | 1990-07-24 | 1997-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming insulating films, capacitances, and semiconductor devices |
| US6586346B1 (en) * | 1990-02-06 | 2003-07-01 | Semiconductor Energy Lab | Method of forming an oxide film |
| US7335570B1 (en) | 1990-07-24 | 2008-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming insulating films, capacitances, and semiconductor devices |
-
1965
- 1965-06-16 NL NL6507670A patent/NL6507670A/xx unknown
- 1965-06-30 GB GB27641/65A patent/GB1096925A/en not_active Expired
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2416439A1 (fr) * | 1978-01-31 | 1979-08-31 | Blinov Viktor | Four electrique pour le traitement et le durcissement chimico-thermique de produits a l'aide d'une decharge luminescente |
| GB2132636A (en) * | 1982-10-12 | 1984-07-11 | Secr Defence | Glow discharge coating method |
| WO1986000650A1 (en) * | 1984-07-11 | 1986-01-30 | Battelle-Institut E.V. | Method for the preparation of gold-coloured titanium nitride layers |
| GB2181461A (en) * | 1985-10-10 | 1987-04-23 | Canadian Patents Dev | Depositing semiconductor compounds by reactive sputtering |
| GB2181461B (en) * | 1985-10-10 | 1989-09-27 | Canadian Patents Dev | Doping semiconductor compounds by reactive sputtering |
| US6586346B1 (en) * | 1990-02-06 | 2003-07-01 | Semiconductor Energy Lab | Method of forming an oxide film |
| US6960812B2 (en) | 1990-02-06 | 2005-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming an oxide film |
| US7301211B2 (en) | 1990-02-06 | 2007-11-27 | Semiconductor Energy Laboratory Co. Ltd. | Method of forming an oxide film |
| US5665210A (en) * | 1990-07-24 | 1997-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming insulating films, capacitances, and semiconductor devices |
| US6144057A (en) * | 1990-07-24 | 2000-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device including a field effect transistor |
| US7335570B1 (en) | 1990-07-24 | 2008-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming insulating films, capacitances, and semiconductor devices |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6507670A (enrdf_load_stackoverflow) | 1965-12-31 |
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