GB1087044A - Improvements in or relating to methods of fabricating electrical devices - Google Patents
Improvements in or relating to methods of fabricating electrical devicesInfo
- Publication number
- GB1087044A GB1087044A GB19812/65A GB1981265A GB1087044A GB 1087044 A GB1087044 A GB 1087044A GB 19812/65 A GB19812/65 A GB 19812/65A GB 1981265 A GB1981265 A GB 1981265A GB 1087044 A GB1087044 A GB 1087044A
- Authority
- GB
- United Kingdom
- Prior art keywords
- lead
- layer
- silicon monoxide
- resist
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/44—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using super-conductive elements, e.g. cryotron
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
An electrical device, e.g. a cryotron, is formed by vapour depositing (1) a conducting layer of e.g. lead on a substrate of e.g. glass, (2) an insulating layer of e.g. silicon monoxide (3) a superconducting layer of e.g. tin, (4) an etch resistant layer of e.g. silicon monoxide or a polymer, (5) a layer of lead, and (6) a photo-resist. The photo-resist is exposed through a mask and the top lead layer or the lead and tin layers are selectively etched by e.g. HNO3. Residual etchant is washed away and the resist removed with acetone. Further layers of silicon monoxide and lead may be deposited. The top layers of lead may also be etched to form a control conductor using 10% acetic acid + H2O2 in a ratio of 4 : 1. The cryotron is given a final protective layer of silicon monoxide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB19812/65A GB1087044A (en) | 1965-05-11 | 1965-05-11 | Improvements in or relating to methods of fabricating electrical devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB19812/65A GB1087044A (en) | 1965-05-11 | 1965-05-11 | Improvements in or relating to methods of fabricating electrical devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1087044A true GB1087044A (en) | 1967-10-11 |
Family
ID=10135647
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB19812/65A Expired GB1087044A (en) | 1965-05-11 | 1965-05-11 | Improvements in or relating to methods of fabricating electrical devices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1087044A (en) |
-
1965
- 1965-05-11 GB GB19812/65A patent/GB1087044A/en not_active Expired
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