GB1083273A - Semiconductor integrated circuits and method of making the same - Google Patents

Semiconductor integrated circuits and method of making the same

Info

Publication number
GB1083273A
GB1083273A GB10042/66A GB1004266A GB1083273A GB 1083273 A GB1083273 A GB 1083273A GB 10042/66 A GB10042/66 A GB 10042/66A GB 1004266 A GB1004266 A GB 1004266A GB 1083273 A GB1083273 A GB 1083273A
Authority
GB
United Kingdom
Prior art keywords
layer
insulating layer
silicon
type
isolated regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB10042/66A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB1083273A publication Critical patent/GB1083273A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB10042/66A 1965-03-31 1966-03-08 Semiconductor integrated circuits and method of making the same Expired GB1083273A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44420865A 1965-03-31 1965-03-31

Publications (1)

Publication Number Publication Date
GB1083273A true GB1083273A (en) 1967-09-13

Family

ID=23763944

Family Applications (1)

Application Number Title Priority Date Filing Date
GB10042/66A Expired GB1083273A (en) 1965-03-31 1966-03-08 Semiconductor integrated circuits and method of making the same

Country Status (3)

Country Link
US (1) US3423255A (en:Method)
GB (1) GB1083273A (en:Method)
NL (1) NL6604270A (en:Method)

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US3535772A (en) * 1968-03-25 1970-10-27 Bell Telephone Labor Inc Semiconductor device fabrication processes
US3654000A (en) * 1969-04-18 1972-04-04 Hughes Aircraft Co Separating and maintaining original dice position in a wafer
US3660732A (en) * 1971-02-08 1972-05-02 Signetics Corp Semiconductor structure with dielectric and air isolation and method
US3944447A (en) * 1973-03-12 1976-03-16 Ibm Corporation Method for fabrication of integrated circuit structure with full dielectric isolation utilizing selective oxidation
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
JPS5718341B2 (en:Method) * 1974-12-11 1982-04-16
US4056414A (en) * 1976-11-01 1977-11-01 Fairchild Camera And Instrument Corporation Process for producing an improved dielectrically-isolated silicon crystal utilizing adjacent areas of different insulators
US4309716A (en) * 1979-10-22 1982-01-05 International Business Machines Corporation Bipolar dynamic memory cell
US4851366A (en) * 1987-11-13 1989-07-25 Siliconix Incorporated Method for providing dielectrically isolated circuit
US5416354A (en) * 1989-01-06 1995-05-16 Unitrode Corporation Inverted epitaxial process semiconductor devices
AU2005224677A1 (en) * 2004-03-19 2005-09-29 Dow Global Technologies Inc. Propylene-based copolymers, a method of making the fibers and articles made from the fibers
US7101623B2 (en) * 2004-03-19 2006-09-05 Dow Global Technologies Inc. Extensible and elastic conjugate fibers and webs having a nontacky feel
US20090156079A1 (en) 2007-12-14 2009-06-18 Kimberly-Clark Worldwide, Inc. Antistatic breathable nonwoven laminate having improved barrier properties
US8194138B2 (en) * 2008-12-17 2012-06-05 Getac Technology Corporation Portable electronic device and camera module thereof
US10753023B2 (en) 2010-08-13 2020-08-25 Kimberly-Clark Worldwide, Inc. Toughened polylactic acid fibers
US8936740B2 (en) 2010-08-13 2015-01-20 Kimberly-Clark Worldwide, Inc. Modified polylactic acid fibers
RU2632842C2 (ru) 2013-06-12 2017-10-10 Кимберли-Кларк Ворлдвайд, Инк. Полимерный материал для применения в теплоизоляции
US11965083B2 (en) 2013-06-12 2024-04-23 Kimberly-Clark Worldwide, Inc. Polyolefin material having a low density
AU2014279792B2 (en) 2013-06-12 2017-06-22 Kimberly-Clark Worldwide, Inc. Polyolefin film for use in packaging
WO2015187198A1 (en) 2014-06-06 2015-12-10 Kimberly-Clark Worldwide, Inc. Hollow porous fibers
SG11201510050QA (en) 2013-06-12 2016-01-28 Kimberly Clark Co Pore initiation technique
SG11201510047YA (en) 2013-06-12 2016-01-28 Kimberly Clark Co Polymeric material with a multimodal pore size distribution
BR112015030619B1 (pt) 2013-06-12 2022-02-22 Kimberly-Clark Worldwide, Inc Artigo absorvente
JP2016527375A (ja) 2013-08-09 2016-09-08 キンバリー クラーク ワールドワイド インコーポレイテッド 形状保持特性を持つ柔軟な高分子材料
KR101749007B1 (ko) 2013-08-09 2017-06-19 킴벌리-클라크 월드와이드, 인크. 활성제 전달 시스템
WO2015019212A1 (en) 2013-08-09 2015-02-12 Kimberly-Clark Worldwide, Inc. Polymeric material for three-dimensional printing
SG11201601708QA (en) 2013-08-09 2016-04-28 Kimberly Clark Co Anisotropic polymeric material
BR112016002594B1 (pt) 2013-08-09 2021-08-17 Kimberly-Clark Worldwide, Inc. Método para controlar seletivamente o grau de porosidade em um material polimérico, e, material polimérico
AU2014304191B2 (en) 2013-08-09 2017-06-01 Kimberly-Clark Worldwide, Inc. Microparticles having a multimodal pore distribution
RU2016148475A (ru) 2014-06-06 2018-06-09 Кимберли-Кларк Ворлдвайд, Инк. Термоформованное изделие, образованное из пористого полимерного листа
AU2015353887B2 (en) 2014-11-26 2019-07-04 Kimberly-Clark Worldwide, Inc. Annealed porous polyolefin material
KR101834143B1 (ko) 2015-01-30 2018-03-02 킴벌리-클라크 월드와이드, 인크. 소음이 감소된 흡수 용품 패키지
GB2549059B (en) 2015-01-30 2021-06-16 Kimberly Clark Co Film with reduced noise for use in an absorbent article
US11155935B2 (en) 2015-12-11 2021-10-26 Kimberly-Clark Worldwide, Inc. Method for forming porous fibers
BR112018010467B1 (pt) 2015-12-11 2022-11-16 Kimberly-Clark Worldwide, Inc Método para formação de fibras porosas, e, manta não tecida
AU2018214803B2 (en) 2017-01-31 2023-05-11 Kimberly-Clark Worldwide, Inc. Porous polyester material
KR102556244B1 (ko) 2017-01-31 2023-07-18 킴벌리-클라크 월드와이드, 인크. 중합체 물질
WO2018160284A2 (en) 2017-02-28 2018-09-07 Kimberly-Clark Worldwide, Inc. Techinque for forming porous fibers

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US3158788A (en) * 1960-08-15 1964-11-24 Fairchild Camera Instr Co Solid-state circuitry having discrete regions of semi-conductor material isolated by an insulating material
NL276298A (en:Method) * 1961-04-03 1900-01-01
US3296040A (en) * 1962-08-17 1967-01-03 Fairchild Camera Instr Co Epitaxially growing layers of semiconductor through openings in oxide mask
US3300832A (en) * 1963-06-28 1967-01-31 Rca Corp Method of making composite insulatorsemiconductor wafer
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
US3332137A (en) * 1964-09-28 1967-07-25 Rca Corp Method of isolating chips of a wafer of semiconductor material
US3332143A (en) * 1964-12-28 1967-07-25 Gen Electric Semiconductor devices with epitaxial contour

Also Published As

Publication number Publication date
DE1539117A1 (de) 1969-09-11
DE1539117B2 (de) 1975-01-09
US3423255A (en) 1969-01-21
NL6604270A (en:Method) 1966-10-03

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