GB1074420A - Improvements relating to a method for fabricating insulated-gate field effect transistors - Google Patents

Improvements relating to a method for fabricating insulated-gate field effect transistors

Info

Publication number
GB1074420A
GB1074420A GB24244/66A GB2424466A GB1074420A GB 1074420 A GB1074420 A GB 1074420A GB 24244/66 A GB24244/66 A GB 24244/66A GB 2424466 A GB2424466 A GB 2424466A GB 1074420 A GB1074420 A GB 1074420A
Authority
GB
United Kingdom
Prior art keywords
wafer
insulating layer
transistor
forming
gate field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB24244/66A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1074420A publication Critical patent/GB1074420A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
GB24244/66A 1965-06-30 1966-05-31 Improvements relating to a method for fabricating insulated-gate field effect transistors Expired GB1074420A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46848165A 1965-06-30 1965-06-30

Publications (1)

Publication Number Publication Date
GB1074420A true GB1074420A (en) 1967-07-05

Family

ID=23859993

Family Applications (1)

Application Number Title Priority Date Filing Date
GB24244/66A Expired GB1074420A (en) 1965-06-30 1966-05-31 Improvements relating to a method for fabricating insulated-gate field effect transistors

Country Status (4)

Country Link
US (1) US3445924A (enExample)
JP (2) JPS5220830B1 (enExample)
FR (1) FR1485073A (enExample)
GB (1) GB1074420A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1942239A1 (de) * 1968-09-09 1970-04-16 Nat Semiconductor Corp Flaechentransistor und Verfahren zur Herstellung desselben

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE30251E (en) * 1967-06-08 1980-04-08 U.S. Philips Corporation Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same
US3676921A (en) * 1967-06-08 1972-07-18 Philips Corp Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same
US3547717A (en) * 1968-04-29 1970-12-15 Sprague Electric Co Radiation resistant semiconductive device
DE1920400A1 (de) * 1969-04-22 1970-11-12 Siemens Ag Verfahren zur Herstellung von Feldeffekttransistoren
US3627647A (en) * 1969-05-19 1971-12-14 Cogar Corp Fabrication method for semiconductor devices
US3679941A (en) * 1969-09-22 1972-07-25 Gen Electric Composite integrated circuits including semiconductor chips mounted on a common substrate with connections made through a dielectric encapsulator
US3714525A (en) * 1970-03-02 1973-01-30 Gen Electric Field-effect transistors with self registered gate which acts as diffusion mask during formation
US3798512A (en) * 1970-09-28 1974-03-19 Ibm Fet device with guard ring and fabrication method therefor
US3673679A (en) * 1970-12-01 1972-07-04 Texas Instruments Inc Complementary insulated gate field effect devices
JPS5714216A (en) * 1980-06-30 1982-01-25 Mitsubishi Electric Corp Input protecting circuit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL267831A (enExample) * 1960-08-17
US3311756A (en) * 1963-06-24 1967-03-28 Hitachi Seisakusho Tokyoto Kk Electronic circuit having a fieldeffect transistor therein

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1942239A1 (de) * 1968-09-09 1970-04-16 Nat Semiconductor Corp Flaechentransistor und Verfahren zur Herstellung desselben

Also Published As

Publication number Publication date
JPS5220830B1 (enExample) 1977-06-06
US3445924A (en) 1969-05-27
JPS4941467B1 (enExample) 1974-11-09
FR1485073A (fr) 1967-06-16

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