FR1485073A - Procédé de fabrication de transistor à effet de champ et à porte isolée ayant des caractéristiques de fonctionnement commandées - Google Patents

Procédé de fabrication de transistor à effet de champ et à porte isolée ayant des caractéristiques de fonctionnement commandées

Info

Publication number
FR1485073A
FR1485073A FR7903A FR06007903A FR1485073A FR 1485073 A FR1485073 A FR 1485073A FR 7903 A FR7903 A FR 7903A FR 06007903 A FR06007903 A FR 06007903A FR 1485073 A FR1485073 A FR 1485073A
Authority
FR
France
Prior art keywords
manufacturing
field effect
effect transistor
insulated gate
operating characteristics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7903A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1485073A publication Critical patent/FR1485073A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7903A 1965-06-30 1966-06-22 Procédé de fabrication de transistor à effet de champ et à porte isolée ayant des caractéristiques de fonctionnement commandées Expired FR1485073A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46848165A 1965-06-30 1965-06-30

Publications (1)

Publication Number Publication Date
FR1485073A true FR1485073A (fr) 1967-06-16

Family

ID=23859993

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7903A Expired FR1485073A (fr) 1965-06-30 1966-06-22 Procédé de fabrication de transistor à effet de champ et à porte isolée ayant des caractéristiques de fonctionnement commandées

Country Status (4)

Country Link
US (1) US3445924A (enExample)
JP (2) JPS5220830B1 (enExample)
FR (1) FR1485073A (enExample)
GB (1) GB1074420A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2039341A1 (enExample) * 1969-04-22 1971-01-15 Siemens Ag

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE30251E (en) * 1967-06-08 1980-04-08 U.S. Philips Corporation Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same
US3676921A (en) * 1967-06-08 1972-07-18 Philips Corp Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same
US3547717A (en) * 1968-04-29 1970-12-15 Sprague Electric Co Radiation resistant semiconductive device
US3651565A (en) * 1968-09-09 1972-03-28 Nat Semiconductor Corp Lateral transistor structure and method of making the same
US3627647A (en) * 1969-05-19 1971-12-14 Cogar Corp Fabrication method for semiconductor devices
US3679941A (en) * 1969-09-22 1972-07-25 Gen Electric Composite integrated circuits including semiconductor chips mounted on a common substrate with connections made through a dielectric encapsulator
US3714525A (en) * 1970-03-02 1973-01-30 Gen Electric Field-effect transistors with self registered gate which acts as diffusion mask during formation
US3798512A (en) * 1970-09-28 1974-03-19 Ibm Fet device with guard ring and fabrication method therefor
US3673679A (en) * 1970-12-01 1972-07-04 Texas Instruments Inc Complementary insulated gate field effect devices
JPS5714216A (en) * 1980-06-30 1982-01-25 Mitsubishi Electric Corp Input protecting circuit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL267831A (enExample) * 1960-08-17
US3311756A (en) * 1963-06-24 1967-03-28 Hitachi Seisakusho Tokyoto Kk Electronic circuit having a fieldeffect transistor therein

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2039341A1 (enExample) * 1969-04-22 1971-01-15 Siemens Ag

Also Published As

Publication number Publication date
JPS4941467B1 (enExample) 1974-11-09
US3445924A (en) 1969-05-27
JPS5220830B1 (enExample) 1977-06-06
GB1074420A (en) 1967-07-05

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