FR1453565A - Transistor à effet de champ à électrode de commande isolée - Google Patents

Transistor à effet de champ à électrode de commande isolée

Info

Publication number
FR1453565A
FR1453565A FR37509A FR37509A FR1453565A FR 1453565 A FR1453565 A FR 1453565A FR 37509 A FR37509 A FR 37509A FR 37509 A FR37509 A FR 37509A FR 1453565 A FR1453565 A FR 1453565A
Authority
FR
France
Prior art keywords
field effect
effect transistor
control electrode
electrode field
insulated control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR37509A
Other languages
English (en)
Inventor
Fritz Bergmann
Heinz-Wilhelm Ehlbeck
Gerd Seiter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Application granted granted Critical
Publication of FR1453565A publication Critical patent/FR1453565A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B17/00—Fire alarms; Alarms responsive to explosion
    • G08B17/10—Actuation by presence of smoke or gases, e.g. automatic alarm devices for analysing flowing fluid materials by the use of optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Business, Economics & Management (AREA)
  • Emergency Management (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR37509A 1964-11-06 1965-11-05 Transistor à effet de champ à électrode de commande isolée Expired FR1453565A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET0027377 1964-11-06

Publications (1)

Publication Number Publication Date
FR1453565A true FR1453565A (fr) 1966-06-03

Family

ID=7553446

Family Applications (1)

Application Number Title Priority Date Filing Date
FR37509A Expired FR1453565A (fr) 1964-11-06 1965-11-05 Transistor à effet de champ à électrode de commande isolée

Country Status (3)

Country Link
DE (1) DE1439740A1 (fr)
FR (1) FR1453565A (fr)
GB (1) GB1127616A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614861A1 (de) * 1967-09-01 1970-02-26 Telefunken Patent Feldeffekttransistor
US3653978A (en) * 1968-03-11 1972-04-04 Philips Corp Method of making semiconductor devices
USRE28704E (en) * 1968-03-11 1976-02-03 U.S. Philips Corporation Semiconductor devices

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5126036B1 (fr) * 1970-06-19 1976-08-04
NL7017066A (fr) * 1970-11-21 1972-05-24

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614861A1 (de) * 1967-09-01 1970-02-26 Telefunken Patent Feldeffekttransistor
US3653978A (en) * 1968-03-11 1972-04-04 Philips Corp Method of making semiconductor devices
USRE28704E (en) * 1968-03-11 1976-02-03 U.S. Philips Corporation Semiconductor devices

Also Published As

Publication number Publication date
DE1439740A1 (de) 1970-01-22
GB1127616A (en) 1968-09-18

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