GB1042270A - Variable capacitance diodes - Google Patents

Variable capacitance diodes

Info

Publication number
GB1042270A
GB1042270A GB33095/64A GB3309564A GB1042270A GB 1042270 A GB1042270 A GB 1042270A GB 33095/64 A GB33095/64 A GB 33095/64A GB 3309564 A GB3309564 A GB 3309564A GB 1042270 A GB1042270 A GB 1042270A
Authority
GB
United Kingdom
Prior art keywords
junction
diffusion
region
alloying
aug
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB33095/64A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
TDK Micronas GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Micronas GmbH filed Critical TDK Micronas GmbH
Publication of GB1042270A publication Critical patent/GB1042270A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB33095/64A 1963-08-13 1964-08-13 Variable capacitance diodes Expired GB1042270A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEJ0024244 1963-08-13

Publications (1)

Publication Number Publication Date
GB1042270A true GB1042270A (en) 1966-09-14

Family

ID=7201736

Family Applications (1)

Application Number Title Priority Date Filing Date
GB33095/64A Expired GB1042270A (en) 1963-08-13 1964-08-13 Variable capacitance diodes

Country Status (3)

Country Link
DE (1) DE1464703B2 (enrdf_load_stackoverflow)
FR (1) FR1390594A (enrdf_load_stackoverflow)
GB (1) GB1042270A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3579278A (en) * 1967-10-12 1971-05-18 Varian Associates Surface barrier diode having a hypersensitive {72 {30 {0 region forming a hypersensitive voltage variable capacitor
US3999212A (en) * 1967-03-03 1976-12-21 Hitachi, Ltd. Field effect semiconductor device having a protective diode

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2405067C2 (de) * 1974-02-02 1982-06-03 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen einer Halbleiteranordnung

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3999212A (en) * 1967-03-03 1976-12-21 Hitachi, Ltd. Field effect semiconductor device having a protective diode
US3579278A (en) * 1967-10-12 1971-05-18 Varian Associates Surface barrier diode having a hypersensitive {72 {30 {0 region forming a hypersensitive voltage variable capacitor

Also Published As

Publication number Publication date
DE1464703B2 (de) 1973-04-19
DE1464703A1 (de) 1968-11-28
FR1390594A (fr) 1965-02-26

Similar Documents

Publication Publication Date Title
GB1138237A (en) Guard junctions for p-n junction semiconductor devices
GB1105177A (en) Improvements in semiconductor devices
GB1033537A (en) Improved surface-potential controlled semiconductor device
GB1229776A (enrdf_load_stackoverflow)
GB1450494A (en) Semiconductor devices with high break-down voltage character istics
GB1520921A (en) Semiconductor devices
GB1012124A (en) Improvements in or relating to semiconductor devices
IE32729L (en) Drift field thyristor
GB1043614A (en) Manufacture of semiconductor junction devices
GB1073551A (en) Integrated circuit comprising a diode and method of making the same
GB1507115A (en) Transistor having integrated protection
GB1427014A (en) Semiconductor devices
GB1042270A (en) Variable capacitance diodes
GB1260618A (en) Planar junctions with integrated resistor, for high voltages
GB949646A (en) Improvements in or relating to semiconductor devices
GB1364035A (en) Method for the manufacturing of a zener diode
GB1076371A (en) Semiconductor device with auxiliary junction for enhancing breakdown voltage of primary junction
FR2240530B3 (enrdf_load_stackoverflow)
GB1078273A (en) Semiconductor device
GB1007936A (en) Improvements in or relating to semiconductive devices
GB1127629A (en) Improved semi-conductor element
GB1165860A (en) Semiconductor Device with a Large Area PN-Junction
GB1300726A (en) Semiconductor devices
GB988264A (en) Semi-conductor device with self-protection against overvoltage
GB1107068A (en) Controllable semiconductor rectifier element