GB1039364A - Production of elongated semiconductor bodies - Google Patents
Production of elongated semiconductor bodiesInfo
- Publication number
- GB1039364A GB1039364A GB20986/65A GB2098665A GB1039364A GB 1039364 A GB1039364 A GB 1039364A GB 20986/65 A GB20986/65 A GB 20986/65A GB 2098665 A GB2098665 A GB 2098665A GB 1039364 A GB1039364 A GB 1039364A
- Authority
- GB
- United Kingdom
- Prior art keywords
- seed
- production
- antimonide
- melt
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- 239000000155 melt Substances 0.000 abstract 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 210000001787 dendrite Anatomy 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000007654 immersion Methods 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38601364A | 1964-07-29 | 1964-07-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1039364A true GB1039364A (en) | 1966-08-17 |
Family
ID=23523790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB20986/65A Expired GB1039364A (en) | 1964-07-29 | 1965-05-18 | Production of elongated semiconductor bodies |
Country Status (3)
Country | Link |
---|---|
FR (1) | FR1441314A (enrdf_load_stackoverflow) |
GB (1) | GB1039364A (enrdf_load_stackoverflow) |
NL (2) | NL6509639A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2473072A1 (fr) * | 1980-01-07 | 1981-07-10 | Sachs Emanuel | Procede et appareil de formation de rubans par cristallisation et de reduction de la quantite d'impuretes de tels rubans, et rubans cristallins a bords contenant des fils |
US4617084A (en) * | 1983-07-29 | 1986-10-14 | Commissariat A L'energie Atomique | Process for the production of metallic or semimetallic shaped elements |
US4661200A (en) * | 1980-01-07 | 1987-04-28 | Sachs Emanuel M | String stabilized ribbon growth |
-
0
- NL NL124684D patent/NL124684C/xx active
-
1965
- 1965-05-18 GB GB20986/65A patent/GB1039364A/en not_active Expired
- 1965-07-26 NL NL6509639A patent/NL6509639A/xx unknown
- 1965-07-28 FR FR26379A patent/FR1441314A/fr not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2473072A1 (fr) * | 1980-01-07 | 1981-07-10 | Sachs Emanuel | Procede et appareil de formation de rubans par cristallisation et de reduction de la quantite d'impuretes de tels rubans, et rubans cristallins a bords contenant des fils |
DE3100245A1 (de) * | 1980-01-07 | 1982-01-14 | Emanuel M. 02178 Belmont Mass. Sachs | Verfahren und vorrichtung zum kontinuierlichen zuechten von kristallinen oder halb-kristallinen bandaehnlichen koerpern aus einer schmelze |
US4661200A (en) * | 1980-01-07 | 1987-04-28 | Sachs Emanuel M | String stabilized ribbon growth |
US4617084A (en) * | 1983-07-29 | 1986-10-14 | Commissariat A L'energie Atomique | Process for the production of metallic or semimetallic shaped elements |
Also Published As
Publication number | Publication date |
---|---|
NL6509639A (enrdf_load_stackoverflow) | 1966-01-31 |
FR1441314A (fr) | 1966-06-03 |
NL124684C (enrdf_load_stackoverflow) | 1900-01-01 |
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