GB1039364A - Production of elongated semiconductor bodies - Google Patents

Production of elongated semiconductor bodies

Info

Publication number
GB1039364A
GB1039364A GB20986/65A GB2098665A GB1039364A GB 1039364 A GB1039364 A GB 1039364A GB 20986/65 A GB20986/65 A GB 20986/65A GB 2098665 A GB2098665 A GB 2098665A GB 1039364 A GB1039364 A GB 1039364A
Authority
GB
United Kingdom
Prior art keywords
seed
production
antimonide
melt
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20986/65A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of GB1039364A publication Critical patent/GB1039364A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB20986/65A 1964-07-29 1965-05-18 Production of elongated semiconductor bodies Expired GB1039364A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US38601364A 1964-07-29 1964-07-29

Publications (1)

Publication Number Publication Date
GB1039364A true GB1039364A (en) 1966-08-17

Family

ID=23523790

Family Applications (1)

Application Number Title Priority Date Filing Date
GB20986/65A Expired GB1039364A (en) 1964-07-29 1965-05-18 Production of elongated semiconductor bodies

Country Status (3)

Country Link
FR (1) FR1441314A (enrdf_load_stackoverflow)
GB (1) GB1039364A (enrdf_load_stackoverflow)
NL (2) NL6509639A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2473072A1 (fr) * 1980-01-07 1981-07-10 Sachs Emanuel Procede et appareil de formation de rubans par cristallisation et de reduction de la quantite d'impuretes de tels rubans, et rubans cristallins a bords contenant des fils
US4617084A (en) * 1983-07-29 1986-10-14 Commissariat A L'energie Atomique Process for the production of metallic or semimetallic shaped elements
US4661200A (en) * 1980-01-07 1987-04-28 Sachs Emanuel M String stabilized ribbon growth

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2473072A1 (fr) * 1980-01-07 1981-07-10 Sachs Emanuel Procede et appareil de formation de rubans par cristallisation et de reduction de la quantite d'impuretes de tels rubans, et rubans cristallins a bords contenant des fils
DE3100245A1 (de) * 1980-01-07 1982-01-14 Emanuel M. 02178 Belmont Mass. Sachs Verfahren und vorrichtung zum kontinuierlichen zuechten von kristallinen oder halb-kristallinen bandaehnlichen koerpern aus einer schmelze
US4661200A (en) * 1980-01-07 1987-04-28 Sachs Emanuel M String stabilized ribbon growth
US4617084A (en) * 1983-07-29 1986-10-14 Commissariat A L'energie Atomique Process for the production of metallic or semimetallic shaped elements

Also Published As

Publication number Publication date
NL6509639A (enrdf_load_stackoverflow) 1966-01-31
FR1441314A (fr) 1966-06-03
NL124684C (enrdf_load_stackoverflow) 1900-01-01

Similar Documents

Publication Publication Date Title
GB916390A (en) Method of drawing a semi-conductor rod from a melt
GB1039364A (en) Production of elongated semiconductor bodies
GB908033A (en) Improvements in semiconductive wafers and methods of making the same
GB1079870A (en) A method of melting a rod of crystalline material zone-by-zone
GB977933A (en) Thick web dendritic growth
GB948002A (en) Improvements in or relating to the preparation of semiconductor materials
JPS5344170A (en) Production of semiconductor device
ES344100A1 (es) Dispositivo semiconductor.
GB1010388A (en) An energy transmitting device
GB1412201A (en) Connecting device for straps subjected to traction
JPS52130487A (en) Crucible to be used in device for pulling up single crystal of semic onducto r
JPS55138228A (en) Manufacture of semiconductor device
FR2315346A1 (fr) Creuset pour la fabrication d'un lingot cristallin
GB889160A (en) A process for converting a polycrystalline rod of semi-conductor material into the monocrystalline form
GB1015541A (en) Improvements in or relating to methods of producing a semi-conductor dendrite
JPS5423467A (en) Singlecrystal growing method for binary semiconductor
JPS5254385A (en) Production of semiconductor light emitting device
GB1239560A (enrdf_load_stackoverflow)
USD192510S (en) Tail for fishing lure
NL6811583A (en) Metal and semi-conductor purification - and mfg. monocrystals by means of zone melting
GB626669A (en) An article of wearing apparel usable as a sash, scarf and hood-like head covering
GB1261065A (en) Method for growing single crystals
USD145081S (en) Design for a toy dog or similar article
JPS57156398A (en) Preparation of ribbonlike silicon crystal
KLASSEN-NEKLYUDOVA et al. Dislocation structure in the concentrated loading region of lead sulfide crystals(Dislocation structure in lead sulfide crystals as revealed by concentrated stress loading and selective etching)