GB1031494A - Improvements in or relating to processes for the manufacture of substantially homogeneously doped crystals of semiconductor material - Google Patents
Improvements in or relating to processes for the manufacture of substantially homogeneously doped crystals of semiconductor materialInfo
- Publication number
- GB1031494A GB1031494A GB3871164A GB3871164A GB1031494A GB 1031494 A GB1031494 A GB 1031494A GB 3871164 A GB3871164 A GB 3871164A GB 3871164 A GB3871164 A GB 3871164A GB 1031494 A GB1031494 A GB 1031494A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- gaseous
- conductor material
- doping
- doping substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title abstract 11
- 239000004065 semiconductor Substances 0.000 title abstract 11
- 239000013078 crystal Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000126 substance Substances 0.000 abstract 7
- 238000006243 chemical reaction Methods 0.000 abstract 5
- 239000007788 liquid Substances 0.000 abstract 4
- 150000001875 compounds Chemical class 0.000 abstract 3
- 230000008021 deposition Effects 0.000 abstract 2
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 abstract 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1963S0087768 DE1286512B (de) | 1963-10-08 | 1963-10-08 | Verfahren zur Herstellung von insbesondere stabfoermigen Halbleiterkristallen mit ueber den ganzen Kristall homogener oder annaehernd homogener Dotierung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1031494A true GB1031494A (en) | 1966-06-02 |
Family
ID=7514022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3871164A Expired GB1031494A (en) | 1963-10-08 | 1964-09-23 | Improvements in or relating to processes for the manufacture of substantially homogeneously doped crystals of semiconductor material |
Country Status (5)
| Country | Link |
|---|---|
| AT (1) | AT253566B (enExample) |
| CH (1) | CH432479A (enExample) |
| DE (1) | DE1286512B (enExample) |
| GB (1) | GB1031494A (enExample) |
| NL (1) | NL6406894A (enExample) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2556711A (en) * | 1947-10-29 | 1951-06-12 | Bell Telephone Labor Inc | Method of producing rectifiers and rectifier material |
| DE883784C (de) * | 1949-04-06 | 1953-06-03 | Sueddeutsche App Fabrik G M B | Verfahren zur Herstellung von Flaechengleichrichtern und Kristallverstaerkerschichten aus Elementen |
| NL258754A (enExample) * | 1954-05-18 | 1900-01-01 | ||
| DE1140549B (de) * | 1954-05-18 | 1962-12-06 | Siemens Ag | Verfahren zum Herstellen von reinstem kristallinem Germanium, Verbindungen von Elementen der ó¾. und ó§.oder ó�. und ó÷. Gruppe des Periodischen Systems und von oxydischem Halbleitermaterial |
| DE1139812B (de) * | 1958-12-09 | 1962-11-22 | Siemens Ag | Vorrichtung zur Gewinnung stabfoermiger Halbleiterkoerper und Verfahren zum Betrieb dieser Vorrichtung |
| DE1029941B (de) * | 1955-07-13 | 1958-05-14 | Siemens Ag | Verfahren zur Herstellung von einkristallinen Halbleiterschichten |
| DE1130078B (de) * | 1956-08-10 | 1962-05-24 | Siemens Ag | Verfahren zur Dotierung von Halbleiterkristallen fuer Halbleiterbauelemente |
| AT226278B (de) * | 1960-06-14 | 1963-03-11 | Siemens Ag | Verfahren zum Herstellen homogen dotierter einkristalliner Körper aus einem halbleitenden Element |
-
1963
- 1963-10-08 DE DE1963S0087768 patent/DE1286512B/de not_active Withdrawn
-
1964
- 1964-06-17 NL NL6406894A patent/NL6406894A/xx unknown
- 1964-06-23 CH CH822164A patent/CH432479A/de unknown
- 1964-06-29 AT AT557764A patent/AT253566B/de active
- 1964-09-23 GB GB3871164A patent/GB1031494A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| AT253566B (de) | 1967-04-10 |
| CH432479A (de) | 1967-03-31 |
| NL6406894A (enExample) | 1965-04-09 |
| DE1286512B (de) | 1969-01-09 |
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