GB1031494A - Improvements in or relating to processes for the manufacture of substantially homogeneously doped crystals of semiconductor material - Google Patents
Improvements in or relating to processes for the manufacture of substantially homogeneously doped crystals of semiconductor materialInfo
- Publication number
- GB1031494A GB1031494A GB3871164A GB3871164A GB1031494A GB 1031494 A GB1031494 A GB 1031494A GB 3871164 A GB3871164 A GB 3871164A GB 3871164 A GB3871164 A GB 3871164A GB 1031494 A GB1031494 A GB 1031494A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- gaseous
- conductor material
- doping
- doping substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
Abstract
<PICT:1031494/C1/1> A substantially homogeneously doped crystal of semi-conductor material is prepared by deposition of semi-conductor material and doping substance on to a heated substrate. Both materials are obtained by the thermal decomposition of gaseous compounds which are supplied continuously to the reaction chamber. The ratio of gaseous doping substance and gaseous semi-conductor material supplied to the reaction chamber is maintained constant by passing a constant proportion of gaseous semi-conductor material over the doping substance in liquid form maintained at a substantially constant temperature. This may be achieved by diverting a part of the gaseous semi-conductor material through a vessel containing the doping material in liquid form. The temperature of the liquid is maintained substantially constant, the vapour pressure of the liquid determining the proportion of doping substance mixed with the semi-conductor. In Fig. 1 the gaseous semi-conductor compound (e.g. SiCl4) enters as indicated (3), a part passes the flow resistance 2 (which may be variable) whilst the remainder passes through the vessel of doping substance (e.g. PCl3), the two gas streams reuniting before passing to the reaction chamber. A carrier gas (e.g. H2) may be used. The amount of gaseous semi-conductor material may be increased in accordance with the growth rate of the crystal. The carrier body on which deposition takes place may be an elongated monocrystal of the same semi-conductor material to be deposited. A plurality of reaction chambers may be used, each being connected in parallel to a common line supplying the gaseous compound of the semi-conductor material. A separate vessel containing doping substance may be used in conjunction with each reaction chamber and different doping substances may be used in the different chambers.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1963S0087768 DE1286512B (en) | 1963-10-08 | 1963-10-08 | Process for the production of, in particular, rod-shaped semiconductor crystals with doping which is homogeneous or approximately homogeneous over the entire crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1031494A true GB1031494A (en) | 1966-06-02 |
Family
ID=7514022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3871164A Expired GB1031494A (en) | 1963-10-08 | 1964-09-23 | Improvements in or relating to processes for the manufacture of substantially homogeneously doped crystals of semiconductor material |
Country Status (5)
| Country | Link |
|---|---|
| AT (1) | AT253566B (en) |
| CH (1) | CH432479A (en) |
| DE (1) | DE1286512B (en) |
| GB (1) | GB1031494A (en) |
| NL (1) | NL6406894A (en) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2556711A (en) * | 1947-10-29 | 1951-06-12 | Bell Telephone Labor Inc | Method of producing rectifiers and rectifier material |
| DE883784C (en) * | 1949-04-06 | 1953-06-03 | Sueddeutsche App Fabrik G M B | Process for the production of surface rectifiers and crystal amplifier layers from elements |
| DE1139812B (en) * | 1958-12-09 | 1962-11-22 | Siemens Ag | Device for obtaining rod-shaped semiconductor bodies and method for operating this device |
| NL218408A (en) * | 1954-05-18 | 1900-01-01 | ||
| DE1140549B (en) * | 1954-05-18 | 1962-12-06 | Siemens Ag | Process for the production of the purest crystalline germanium, compounds of elements of the ó¾. and ó§. or ó�. and ó ÷. Group of the Periodic Table and Oxide Semiconductor Material |
| DE1029941B (en) * | 1955-07-13 | 1958-05-14 | Siemens Ag | Process for the production of monocrystalline semiconductor layers |
| DE1130078B (en) * | 1956-08-10 | 1962-05-24 | Siemens Ag | Process for doping semiconductor crystals for semiconductor components |
| AT226278B (en) * | 1960-06-14 | 1963-03-11 | Siemens Ag | Process for the production of homogeneously doped monocrystalline bodies from a semiconducting element |
-
1963
- 1963-10-08 DE DE1963S0087768 patent/DE1286512B/en not_active Withdrawn
-
1964
- 1964-06-17 NL NL6406894A patent/NL6406894A/xx unknown
- 1964-06-23 CH CH822164A patent/CH432479A/en unknown
- 1964-06-29 AT AT557764A patent/AT253566B/en active
- 1964-09-23 GB GB3871164A patent/GB1031494A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| AT253566B (en) | 1967-04-10 |
| CH432479A (en) | 1967-03-31 |
| DE1286512B (en) | 1969-01-09 |
| NL6406894A (en) | 1965-04-09 |
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