CH432479A - Process for the production of, in particular, rod-shaped semiconductor crystals with doping homogeneous over the entire crystal, as well as a device for carrying out the process - Google Patents

Process for the production of, in particular, rod-shaped semiconductor crystals with doping homogeneous over the entire crystal, as well as a device for carrying out the process

Info

Publication number
CH432479A
CH432479A CH822164A CH822164A CH432479A CH 432479 A CH432479 A CH 432479A CH 822164 A CH822164 A CH 822164A CH 822164 A CH822164 A CH 822164A CH 432479 A CH432479 A CH 432479A
Authority
CH
Switzerland
Prior art keywords
doping
carrying
rod
production
well
Prior art date
Application number
CH822164A
Other languages
German (de)
Inventor
Belfi Renato
Dietrich Dr Eckardt
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH432479A publication Critical patent/CH432479A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH822164A 1963-10-08 1964-06-23 Process for the production of, in particular, rod-shaped semiconductor crystals with doping homogeneous over the entire crystal, as well as a device for carrying out the process CH432479A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1963S0087768 DE1286512B (en) 1963-10-08 1963-10-08 Process for the production of, in particular, rod-shaped semiconductor crystals with doping which is homogeneous or approximately homogeneous over the entire crystal

Publications (1)

Publication Number Publication Date
CH432479A true CH432479A (en) 1967-03-31

Family

ID=7514022

Family Applications (1)

Application Number Title Priority Date Filing Date
CH822164A CH432479A (en) 1963-10-08 1964-06-23 Process for the production of, in particular, rod-shaped semiconductor crystals with doping homogeneous over the entire crystal, as well as a device for carrying out the process

Country Status (5)

Country Link
AT (1) AT253566B (en)
CH (1) CH432479A (en)
DE (1) DE1286512B (en)
GB (1) GB1031494A (en)
NL (1) NL6406894A (en)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2556711A (en) * 1947-10-29 1951-06-12 Bell Telephone Labor Inc Method of producing rectifiers and rectifier material
DE883784C (en) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Process for the production of surface rectifiers and crystal amplifier layers from elements
NL233004A (en) * 1954-05-18 1900-01-01
DE1139812B (en) * 1958-12-09 1962-11-22 Siemens Ag Device for obtaining rod-shaped semiconductor bodies and method for operating this device
DE1140549B (en) * 1954-05-18 1962-12-06 Siemens Ag Process for the production of the purest crystalline germanium, compounds of elements of the ó¾. and ó§. or ó�. and ó ÷. Group of the Periodic Table and Oxide Semiconductor Material
DE1029941B (en) * 1955-07-13 1958-05-14 Siemens Ag Process for the production of monocrystalline semiconductor layers
DE1130078B (en) * 1956-08-10 1962-05-24 Siemens Ag Process for doping semiconductor crystals for semiconductor components
AT226278B (en) * 1960-06-14 1963-03-11 Siemens Ag Process for the production of homogeneously doped monocrystalline bodies from a semiconducting element

Also Published As

Publication number Publication date
AT253566B (en) 1967-04-10
DE1286512B (en) 1969-01-09
NL6406894A (en) 1965-04-09
GB1031494A (en) 1966-06-02

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