CH494065A - Process for the production of semiconductor crystals - Google Patents

Process for the production of semiconductor crystals

Info

Publication number
CH494065A
CH494065A CH1467267A CH1467267A CH494065A CH 494065 A CH494065 A CH 494065A CH 1467267 A CH1467267 A CH 1467267A CH 1467267 A CH1467267 A CH 1467267A CH 494065 A CH494065 A CH 494065A
Authority
CH
Switzerland
Prior art keywords
production
semiconductor crystals
crystals
semiconductor
Prior art date
Application number
CH1467267A
Other languages
German (de)
Inventor
Franciscus Knippenbe Wilhelmus
Verspui Gerrit
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH494065A publication Critical patent/CH494065A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH1467267A 1966-10-22 1967-10-19 Process for the production of semiconductor crystals CH494065A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6614999A NL6614999A (en) 1966-10-22 1966-10-22

Publications (1)

Publication Number Publication Date
CH494065A true CH494065A (en) 1970-07-31

Family

ID=19797982

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1467267A CH494065A (en) 1966-10-22 1967-10-19 Process for the production of semiconductor crystals

Country Status (9)

Country Link
US (1) US3597171A (en)
AT (1) AT270754B (en)
BE (1) BE705462A (en)
CH (1) CH494065A (en)
DE (1) DE1619987B2 (en)
DK (1) DK115390B (en)
GB (1) GB1165037A (en)
NL (1) NL6614999A (en)
SE (1) SE309966B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50119566A (en) * 1974-03-01 1975-09-19
US4415545A (en) * 1980-12-15 1983-11-15 Monkowski Joseph R Solid film growth via preferential etching of liquid solutions
US5314571A (en) * 1992-05-13 1994-05-24 Midwest Research Institute Crystallization from high temperature solutions of Si in copper

Also Published As

Publication number Publication date
US3597171A (en) 1971-08-03
DK115390B (en) 1969-10-06
DE1619987A1 (en) 1970-03-26
DE1619987B2 (en) 1977-01-20
AT270754B (en) 1969-05-12
SE309966B (en) 1969-04-14
BE705462A (en) 1968-04-22
GB1165037A (en) 1969-09-24
NL6614999A (en) 1968-04-23

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Legal Events

Date Code Title Description
PL Patent ceased