AT253566B - Process for the production of semiconductor crystals with homogeneous or approximately homogeneous doping over the entire crystal and device for carrying out the process - Google Patents

Process for the production of semiconductor crystals with homogeneous or approximately homogeneous doping over the entire crystal and device for carrying out the process

Info

Publication number
AT253566B
AT253566B AT557764A AT557764A AT253566B AT 253566 B AT253566 B AT 253566B AT 557764 A AT557764 A AT 557764A AT 557764 A AT557764 A AT 557764A AT 253566 B AT253566 B AT 253566B
Authority
AT
Austria
Prior art keywords
homogeneous
carrying
production
semiconductor crystals
entire crystal
Prior art date
Application number
AT557764A
Other languages
German (de)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT253566B publication Critical patent/AT253566B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT557764A 1963-10-08 1964-06-29 Process for the production of semiconductor crystals with homogeneous or approximately homogeneous doping over the entire crystal and device for carrying out the process AT253566B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1963S0087768 DE1286512B (en) 1963-10-08 1963-10-08 Process for the production of, in particular, rod-shaped semiconductor crystals with doping which is homogeneous or approximately homogeneous over the entire crystal

Publications (1)

Publication Number Publication Date
AT253566B true AT253566B (en) 1967-04-10

Family

ID=7514022

Family Applications (1)

Application Number Title Priority Date Filing Date
AT557764A AT253566B (en) 1963-10-08 1964-06-29 Process for the production of semiconductor crystals with homogeneous or approximately homogeneous doping over the entire crystal and device for carrying out the process

Country Status (5)

Country Link
AT (1) AT253566B (en)
CH (1) CH432479A (en)
DE (1) DE1286512B (en)
GB (1) GB1031494A (en)
NL (1) NL6406894A (en)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2556711A (en) * 1947-10-29 1951-06-12 Bell Telephone Labor Inc Method of producing rectifiers and rectifier material
DE883784C (en) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Process for the production of surface rectifiers and crystal amplifier layers from elements
DE1140549B (en) * 1954-05-18 1962-12-06 Siemens Ag Process for the production of the purest crystalline germanium, compounds of elements of the ó¾. and ó§. or ó�. and ó ÷. Group of the Periodic Table and Oxide Semiconductor Material
NL218408A (en) * 1954-05-18 1900-01-01
DE1139812B (en) * 1958-12-09 1962-11-22 Siemens Ag Device for obtaining rod-shaped semiconductor bodies and method for operating this device
DE1029941B (en) * 1955-07-13 1958-05-14 Siemens Ag Process for the production of monocrystalline semiconductor layers
DE1130078B (en) * 1956-08-10 1962-05-24 Siemens Ag Process for doping semiconductor crystals for semiconductor components
AT226278B (en) * 1960-06-14 1963-03-11 Siemens Ag Process for the production of homogeneously doped monocrystalline bodies from a semiconducting element

Also Published As

Publication number Publication date
CH432479A (en) 1967-03-31
NL6406894A (en) 1965-04-09
DE1286512B (en) 1969-01-09
GB1031494A (en) 1966-06-02

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