GB1027662A - Improvements in and relating to the production of crystals - Google Patents

Improvements in and relating to the production of crystals

Info

Publication number
GB1027662A
GB1027662A GB30633/64A GB3063364A GB1027662A GB 1027662 A GB1027662 A GB 1027662A GB 30633/64 A GB30633/64 A GB 30633/64A GB 3063364 A GB3063364 A GB 3063364A GB 1027662 A GB1027662 A GB 1027662A
Authority
GB
United Kingdom
Prior art keywords
pulling
crucible
silicon
pulled
carrying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30633/64A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JNC Corp
Original Assignee
Chisso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chisso Corp filed Critical Chisso Corp
Publication of GB1027662A publication Critical patent/GB1027662A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/106—Seed pulling including sealing means details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB30633/64A 1963-07-19 1964-08-04 Improvements in and relating to the production of crystals Expired GB1027662A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3889763 1963-07-19

Publications (1)

Publication Number Publication Date
GB1027662A true GB1027662A (en) 1966-04-27

Family

ID=12537977

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30633/64A Expired GB1027662A (en) 1963-07-19 1964-08-04 Improvements in and relating to the production of crystals

Country Status (4)

Country Link
US (1) US3372003A (enrdf_load_stackoverflow)
BE (1) BE650792A (enrdf_load_stackoverflow)
GB (1) GB1027662A (enrdf_load_stackoverflow)
NL (1) NL6408232A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2145638A (en) * 1983-08-30 1985-04-03 Inst Tech Material Elekt Method of producing crystals
US4600564A (en) * 1983-09-06 1986-07-15 Crismatec Machine for pulling monocrystals

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3865554A (en) * 1971-09-23 1975-02-11 Little Inc A Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique
US3929557A (en) * 1973-06-11 1975-12-30 Us Air Force Periodically and alternately accelerating and decelerating rotation rate of a feed crystal
JPH078495B2 (ja) * 1990-11-29 1995-02-01 信越半導体株式会社 単結晶引上装置の単結晶絞り部自動切断装置
FR3055563B1 (fr) * 2016-09-08 2018-09-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de tri de plaquettes en silicium en fonction de leur duree de vie volumique
FR3055562B1 (fr) * 2016-09-08 2018-09-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de tri de plaquettes en silicium en fonction de la variation du dopage net
CN116411351B (zh) * 2023-03-07 2023-09-26 襄阳鸿凯智能装备有限公司 一种硅碳材料生产装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2753280A (en) * 1952-05-01 1956-07-03 Rca Corp Method and apparatus for growing crystalline material
US2889240A (en) * 1956-03-01 1959-06-02 Rca Corp Method and apparatus for growing semi-conductive single crystals from a melt
US3154384A (en) * 1960-04-13 1964-10-27 Texas Instruments Inc Apparatus for growing compound semiconductor crystal

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2145638A (en) * 1983-08-30 1985-04-03 Inst Tech Material Elekt Method of producing crystals
US4662982A (en) * 1983-08-30 1987-05-05 Instytut Technologii Materialow Elektronicznych Method of producing crystals of materials for use in the electronic industry
US4600564A (en) * 1983-09-06 1986-07-15 Crismatec Machine for pulling monocrystals

Also Published As

Publication number Publication date
BE650792A (enrdf_load_stackoverflow) 1964-11-16
US3372003A (en) 1968-03-05
NL6408232A (enrdf_load_stackoverflow) 1965-01-20

Similar Documents

Publication Publication Date Title
GB1027662A (en) Improvements in and relating to the production of crystals
Akimoto et al. Effect of pressure on the melting of olivine and spinel polymorph of Fe2SiO4
US2892739A (en) Crystal growing procedure
GB1311558A (en) Growing crystals
US2904512A (en) Growth of uniform composition semiconductor crystals
GB692250A (en) Methods of making semiconductive bodies
US2889240A (en) Method and apparatus for growing semi-conductive single crystals from a melt
GB1102989A (en) Method and apparatus for producing crystalline semiconductor ribbon
GB1154240A (en) Improvements in and relating to methods of Crystal Pulling
GB1222465A (en) Improvements in or relating to apparatus for the drawing of monocrystalline semiconductor rods
GB1226473A (enrdf_load_stackoverflow)
GB1032071A (en) Improvements in or relating to methods and apparatus for manufacturing bodies of semiconductor material
GB1055099A (en) Crystals and process for growth thereof
GB1086466A (en) A method for producing semiconductor crystals
GB1164940A (en) A Method of Melting a Rod of Crystalline Material Zone-by-Zone.
US3384449A (en) Method of growing single crystals of ba2 zn2 fe12 o22
GB932504A (en) Method and apparatus for growing single crystals
GB852147A (en) Method of and device for feeding the tool in machine tools
GB903412A (en) Improvements in devices for use in crystal-pulling apparatus
GB751126A (en) Improvements in or relating to methods of producing semi-conductive monocrystals
GB984700A (en) Method of producing dendrite crystals
GB993880A (en) Improvements in or relating to methods and apparatus for pulling crystals from a melt
GB1146230A (en) Apparatus for causing a rod of crystalline material to grow
GB972979A (en) Method of producing uniform resistivity single semiconductor crystals
GB1191166A (en) Zone Melting