GB1027662A - Improvements in and relating to the production of crystals - Google Patents

Improvements in and relating to the production of crystals

Info

Publication number
GB1027662A
GB1027662A GB30633/64A GB3063364A GB1027662A GB 1027662 A GB1027662 A GB 1027662A GB 30633/64 A GB30633/64 A GB 30633/64A GB 3063364 A GB3063364 A GB 3063364A GB 1027662 A GB1027662 A GB 1027662A
Authority
GB
United Kingdom
Prior art keywords
pulling
crucible
silicon
pulled
carrying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30633/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JNC Corp
Original Assignee
Chisso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chisso Corp filed Critical Chisso Corp
Publication of GB1027662A publication Critical patent/GB1027662A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/106—Seed pulling including sealing means details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]

Abstract

1,027,662. Crystal-pulling. CHISSO CORPORATION. Aug. 4, 1964 [July 19,1963], No. 30633/64. Heading B1S. A plurality of pulling devices each carrying a monocrystalline seed are brought successively into operative position above a crucible charged with 1-3 kg of polycrystalline material, 10-60% of the charge being pulled in each pulling operation and afterwards replaced by further polycrystalline material. The crucible may have resistance or induction heating, it may be temperature controlled, and may be rotated during pulling. The material pulled may be silicon or germanium. Silicon may be doped with boron, phosphorus or antimony. The material may be allowed to solidify after each pulling operation. In Fig. 1, a rotary plate 16 carries three pulling devices, each carrying a rotary retractable seed holder 6, the pulling device shown being in close-fit alignment with a furnace heated by an induction coil 1 and containing a crucible 3 fed via a retractable charging pipe 12.
GB30633/64A 1963-07-19 1964-08-04 Improvements in and relating to the production of crystals Expired GB1027662A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3889763 1963-07-19

Publications (1)

Publication Number Publication Date
GB1027662A true GB1027662A (en) 1966-04-27

Family

ID=12537977

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30633/64A Expired GB1027662A (en) 1963-07-19 1964-08-04 Improvements in and relating to the production of crystals

Country Status (4)

Country Link
US (1) US3372003A (en)
BE (1) BE650792A (en)
GB (1) GB1027662A (en)
NL (1) NL6408232A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2145638A (en) * 1983-08-30 1985-04-03 Inst Tech Material Elekt Method of producing crystals
US4600564A (en) * 1983-09-06 1986-07-15 Crismatec Machine for pulling monocrystals

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3865554A (en) * 1971-09-23 1975-02-11 Little Inc A Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique
US3929557A (en) * 1973-06-11 1975-12-30 Us Air Force Periodically and alternately accelerating and decelerating rotation rate of a feed crystal
JPH078495B2 (en) * 1990-11-29 1995-02-01 信越半導体株式会社 Single crystal pulling device automatic cutting device for single crystal pulling device
FR3055563B1 (en) * 2016-09-08 2018-09-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD OF SORTING SILICON PLATES according to their lifetime
FR3055562B1 (en) * 2016-09-08 2018-09-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives SILICON PLATELET SORTING METHOD BASED ON NET DOPING VARIATION
CN116411351B (en) * 2023-03-07 2023-09-26 襄阳鸿凯智能装备有限公司 Silicon carbon material apparatus for producing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2753280A (en) * 1952-05-01 1956-07-03 Rca Corp Method and apparatus for growing crystalline material
US2889240A (en) * 1956-03-01 1959-06-02 Rca Corp Method and apparatus for growing semi-conductive single crystals from a melt
US3154384A (en) * 1960-04-13 1964-10-27 Texas Instruments Inc Apparatus for growing compound semiconductor crystal

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2145638A (en) * 1983-08-30 1985-04-03 Inst Tech Material Elekt Method of producing crystals
US4662982A (en) * 1983-08-30 1987-05-05 Instytut Technologii Materialow Elektronicznych Method of producing crystals of materials for use in the electronic industry
US4600564A (en) * 1983-09-06 1986-07-15 Crismatec Machine for pulling monocrystals

Also Published As

Publication number Publication date
NL6408232A (en) 1965-01-20
BE650792A (en) 1964-11-16
US3372003A (en) 1968-03-05

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