GB1023531A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB1023531A
GB1023531A GB39650/62A GB3965062A GB1023531A GB 1023531 A GB1023531 A GB 1023531A GB 39650/62 A GB39650/62 A GB 39650/62A GB 3965062 A GB3965062 A GB 3965062A GB 1023531 A GB1023531 A GB 1023531A
Authority
GB
United Kingdom
Prior art keywords
oxide
layer
emitter
zones
aluminium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB39650/62A
Other languages
English (en)
Inventor
Bernard Douglas Mills
Roland Francis Payne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE637621D priority Critical patent/BE637621A/xx
Priority to NL292995D priority patent/NL292995A/xx
Priority to BE639640D priority patent/BE639640A/xx
Priority to NL299522D priority patent/NL299522A/xx
Priority to BE632739D priority patent/BE632739A/xx
Priority to NL298258D priority patent/NL298258A/xx
Priority claimed from GB20201/62A external-priority patent/GB1010111A/en
Priority claimed from GB36013/62A external-priority patent/GB1044689A/en
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB39650/62A priority patent/GB1023531A/en
Priority claimed from DEST19973A external-priority patent/DE1179280B/de
Priority to GB48863/62A priority patent/GB1024216A/en
Priority to CH630763A priority patent/CH422927A/de
Priority to DEI23747A priority patent/DE1288174B/de
Priority to FR935770A priority patent/FR1363491A/fr
Priority to FR948183A priority patent/FR84370E/fr
Priority to US312930A priority patent/US3270256A/en
Priority to CH1256863A priority patent/CH468719A/de
Priority to DE1963J0024586 priority patent/DE1302005C2/de
Priority to CH1357663A priority patent/CH424889A/de
Priority to FR953110A priority patent/FR85051E/fr
Priority to SE12333/63A priority patent/SE316221B/xx
Priority to FR958398A priority patent/FR85314E/fr
Priority to GB3786/64A priority patent/GB1036165A/en
Priority to GB9636/64A priority patent/GB1036167A/en
Priority to DE19651514739 priority patent/DE1514739A1/de
Priority to BE659001D priority patent/BE659001A/xx
Priority to BE659002D priority patent/BE659002A/xx
Priority to BE660746D priority patent/BE660746A/xx
Publication of GB1023531A publication Critical patent/GB1023531A/en
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/40—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal all coatings being metal coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/027—Graded interfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/02—Soldered or welded connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/161—Containers comprising no base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/856—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Physical Vapour Deposition (AREA)
  • Combinations Of Printed Boards (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
GB39650/62A 1962-05-25 1962-10-19 Improvements in or relating to semiconductor devices Expired GB1023531A (en)

Priority Applications (25)

Application Number Priority Date Filing Date Title
BE637621D BE637621A (enExample) 1962-05-25
NL292995D NL292995A (enExample) 1962-05-25
BE639640D BE639640A (enExample) 1962-05-25
NL299522D NL299522A (enExample) 1962-05-25
BE632739D BE632739A (enExample) 1962-05-25
NL298258D NL298258A (enExample) 1962-05-25
GB39650/62A GB1023531A (en) 1962-05-25 1962-10-19 Improvements in or relating to semiconductor devices
GB48863/62A GB1024216A (en) 1962-05-25 1962-12-28 Improvements in or relating to circuit modules including semiconductor devices
CH630763A CH422927A (de) 1962-05-25 1963-05-20 Metallschicht auf einer isolierenden Unterlage
DEI23747A DE1288174B (de) 1962-05-25 1963-05-21 Metallischer UEberzug auf einer isolierenden Unterlage
FR935770A FR1363491A (fr) 1962-05-25 1963-05-22 Couche métallique adhérente pour connexions électriques, en particulier pour les organes semi-conducteurs
FR948183A FR84370E (fr) 1962-05-25 1963-09-20 Couche métallique adhérente pour connexions électriques, en particulier pour les organes semi-conducteurs
US312930A US3270256A (en) 1962-05-25 1963-10-01 Continuously graded electrode of two metals for semiconductor devices
CH1256863A CH468719A (de) 1962-05-25 1963-10-14 Halbleitervorrichtung
DE1963J0024586 DE1302005C2 (de) 1962-05-25 1963-10-18 Verwendung eines metallischen ueberzugs als grossflaechiger anschluss fuer plenare halbleiterbauelemente
CH1357663A CH424889A (de) 1962-05-25 1963-11-05 Verfahren zur Herstellung von lötfähigen Kontaktstellen
FR953110A FR85051E (fr) 1962-05-25 1963-11-08 Couche métallique adhérente pour connexions électriques, en particulier pour les organes semi-conducteurs
SE12333/63A SE316221B (enExample) 1962-05-25 1963-11-08
FR958398A FR85314E (fr) 1962-05-25 1963-12-24 Couche métallique adhérente pour connexions électriques, en particulier pour les organes semi-conducteurs
GB3786/64A GB1036165A (en) 1962-05-25 1964-01-29 Improvements in or relating to semiconductor devices
GB9636/64A GB1036167A (en) 1962-05-25 1964-03-06 Improvements in or relating to semiconductor devices
DE19651514739 DE1514739A1 (de) 1962-05-25 1965-01-27 Elektrische Halbleitervorrichtung
BE659002D BE659002A (enExample) 1962-05-25 1965-01-29
BE659001D BE659001A (enExample) 1962-05-25 1965-01-29
BE660746D BE660746A (enExample) 1962-05-25 1965-03-08

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB20201/62A GB1010111A (en) 1962-05-25 1962-05-25 Vapour deposition of metallic films
GB36013/62A GB1044689A (en) 1962-09-21 1962-09-21 Improvements in or relating to mountings for semi-conductor devices
GB39650/62A GB1023531A (en) 1962-05-25 1962-10-19 Improvements in or relating to semiconductor devices
DEST19973A DE1179280B (de) 1962-11-09 1962-11-09 Verfahren zur Herstellung von loetfaehigen Kontaktstellen
GB48863/62A GB1024216A (en) 1962-05-25 1962-12-28 Improvements in or relating to circuit modules including semiconductor devices

Publications (1)

Publication Number Publication Date
GB1023531A true GB1023531A (en) 1966-03-23

Family

ID=27512244

Family Applications (2)

Application Number Title Priority Date Filing Date
GB39650/62A Expired GB1023531A (en) 1962-05-25 1962-10-19 Improvements in or relating to semiconductor devices
GB48863/62A Expired GB1024216A (en) 1962-05-25 1962-12-28 Improvements in or relating to circuit modules including semiconductor devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB48863/62A Expired GB1024216A (en) 1962-05-25 1962-12-28 Improvements in or relating to circuit modules including semiconductor devices

Country Status (7)

Country Link
US (1) US3270256A (enExample)
BE (3) BE639640A (enExample)
CH (3) CH422927A (enExample)
DE (2) DE1288174B (enExample)
GB (2) GB1023531A (enExample)
NL (3) NL292995A (enExample)
SE (1) SE316221B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3480841A (en) * 1967-01-13 1969-11-25 Ibm Solderable backside ohmic contact metal system for semiconductor devices and fabrication process therefor
FR2048035A1 (enExample) * 1969-06-30 1971-03-19 Ibm
FR2048036A1 (enExample) * 1969-06-30 1971-03-19 Ibm

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3266127A (en) * 1964-01-27 1966-08-16 Ibm Method of forming contacts on semiconductors
US3323956A (en) * 1964-03-16 1967-06-06 Hughes Aircraft Co Method of manufacturing semiconductor devices
US3325702A (en) * 1964-04-21 1967-06-13 Texas Instruments Inc High temperature electrical contacts for silicon devices
GB1052135A (enExample) * 1964-11-09
US3477123A (en) * 1965-12-21 1969-11-11 Ibm Masking technique for area reduction of planar transistors
DE1283970B (de) * 1966-03-19 1968-11-28 Siemens Ag Metallischer Kontakt an einem Halbleiterbauelement
US3504430A (en) * 1966-06-27 1970-04-07 Hitachi Ltd Method of making semiconductor devices having insulating films
US3840982A (en) * 1966-12-28 1974-10-15 Westinghouse Electric Corp Contacts for semiconductor devices, particularly integrated circuits, and methods of making the same
US3460003A (en) * 1967-01-30 1969-08-05 Corning Glass Works Metallized semiconductor device with fired-on glaze consisting of 25-35% pbo,10-15% b2o3,5-10% al2o3,and the balance sio2
GB1258580A (enExample) * 1967-12-28 1971-12-30
DE1789062C3 (de) * 1968-09-30 1978-11-30 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von Metallkontaktschichten für Halbleiteranordnungen
DE2807350C2 (de) * 1977-03-02 1983-01-13 Sharp K.K., Osaka Flüssigkristall-Anzeigevorrichtung in Baueinheit mit einem integrierten Schaltkreis
JPS53115069A (en) * 1977-03-18 1978-10-07 Nippon Mining Co Method of producing printed circuit board
FR2547112B1 (fr) * 1983-06-03 1986-11-21 Thomson Csf Procede de realisation d'un circuit hybride et circuit hybride logique ou analogique
FR2986372B1 (fr) 2012-01-31 2014-02-28 Commissariat Energie Atomique Procede d'assemblage d'un element a puce micro-electronique sur un element filaire, installation permettant de realiser l'assemblage
KR102073790B1 (ko) * 2013-12-09 2020-02-05 삼성전자주식회사 투과형 광 셔터 및 상기 투과형 광 셔터의 제조 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR793015A (fr) * 1934-10-16 1936-01-15 Dispersion Cathodique S A Perfectionnements apportés à la dispersion cathodique
DE1006692B (de) * 1953-10-29 1957-04-18 Siemens Ag Verfahren zur Herstellung festhaftender Metallbelegungen auf Unterlagen aller Art
GB874965A (en) * 1958-07-09 1961-08-16 G V Planer Ltd Improvements in or relating to electrical circuits or circuit elements
US2973466A (en) * 1959-09-09 1961-02-28 Bell Telephone Labor Inc Semiconductor contact
US3199002A (en) * 1961-04-17 1965-08-03 Fairchild Camera Instr Co Solid-state circuit with crossing leads and method for making the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3480841A (en) * 1967-01-13 1969-11-25 Ibm Solderable backside ohmic contact metal system for semiconductor devices and fabrication process therefor
FR2048035A1 (enExample) * 1969-06-30 1971-03-19 Ibm
FR2048036A1 (enExample) * 1969-06-30 1971-03-19 Ibm

Also Published As

Publication number Publication date
DE1302005C2 (de) 1975-08-07
US3270256A (en) 1966-08-30
DE1288174B (de) 1969-01-30
DE1302005B (enExample) 1975-08-07
NL299522A (enExample) 1900-01-01
NL298258A (enExample) 1900-01-01
CH424889A (de) 1966-11-30
GB1024216A (en) 1966-03-30
SE316221B (enExample) 1969-10-20
NL292995A (enExample) 1900-01-01
CH468719A (de) 1969-02-15
BE637621A (enExample) 1900-01-01
BE632739A (enExample) 1900-01-01
CH422927A (de) 1966-10-31
BE639640A (enExample) 1900-01-01

Similar Documents

Publication Publication Date Title
GB1023531A (en) Improvements in or relating to semiconductor devices
US3202887A (en) Mesa-transistor with impurity concentration in the base decreasing toward collector junction
GB972512A (en) Methods of making semiconductor devices
US3573571A (en) Surface-diffused transistor with isolated field plate
US4333224A (en) Method of fabricating polysilicon/silicon junction field effect transistors
GB1347874A (en) Semiconductor devices of compound semiconductor material
GB1050478A (enExample)
US3920861A (en) Method of making a semiconductor device
US3906541A (en) Field effect transistor devices and methods of making same
US3451866A (en) Semiconductor device
US3275910A (en) Planar transistor with a relative higher-resistivity base region
GB1154891A (en) Semiconductor Devices and Methods of Manufacture
US3338758A (en) Surface gradient protected high breakdown junctions
GB1245116A (en) Insulated gate field effect transistors
US3716765A (en) Semiconductor device with protective glass sealing
US3746945A (en) Schottky diode clipper device
US3271636A (en) Gallium arsenide semiconductor diode and method
US4801987A (en) Junction type field effect transistor with metallized oxide film
US3319139A (en) Planar transistor device having a reentrant shaped emitter region with base connection in the reentrant portion
US3694719A (en) Schottky barrier diode
US4014718A (en) Method of making integrated circuits free from the formation of a parasitic PNPN thyristor
GB1073135A (en) Semiconductor current limiter
US4333100A (en) Aluminum Schottky contacts and silicon-aluminum interconnects for integrated circuits
US4060827A (en) Semiconductor device and a method of making the same
US3634931A (en) Method for manufacturing pressure sensitive semiconductor device