FR988428A - Redresseurs au sélénium - Google Patents

Redresseurs au sélénium

Info

Publication number
FR988428A
FR988428A FR988428DA FR988428A FR 988428 A FR988428 A FR 988428A FR 988428D A FR988428D A FR 988428DA FR 988428 A FR988428 A FR 988428A
Authority
FR
France
Prior art keywords
selenium rectifiers
rectifiers
selenium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of FR988428A publication Critical patent/FR988428A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/045—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/046—Provision of discrete insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3428—Sulfides
FR988428D 1943-12-15 1947-07-11 Redresseurs au sélénium Expired FR988428A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US514371A US2488369A (en) 1943-12-15 1943-12-15 Selenium rectifier

Publications (1)

Publication Number Publication Date
FR988428A true FR988428A (fr) 1951-08-27

Family

ID=24046859

Family Applications (1)

Application Number Title Priority Date Filing Date
FR988428D Expired FR988428A (fr) 1943-12-15 1947-07-11 Redresseurs au sélénium

Country Status (6)

Country Link
US (1) US2488369A (OSRAM)
CH (1) CH248334A (OSRAM)
DE (1) DE884847C (OSRAM)
FR (1) FR988428A (OSRAM)
GB (1) GB596585A (OSRAM)
NL (1) NL70500C (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE968580C (de) * 1948-10-02 1958-03-06 Standard Elektrik Ag Verfahren zur Herstellung von Trockengleichrichtern
DE973817C (de) * 1951-03-05 1960-06-15 Licentia Gmbh Verfahren zur Herstellung eines Trockengleichrichters
US2901348A (en) * 1953-03-17 1959-08-25 Haloid Xerox Inc Radiation sensitive photoconductive member
US2853663A (en) * 1954-07-08 1958-09-23 Vickers Inc Power transmission
NL204284A (OSRAM) * 1955-02-15
US2871149A (en) * 1955-05-02 1959-01-27 Sprague Electric Co Semiconductor method
US2886434A (en) * 1955-06-06 1959-05-12 Horizons Inc Protected photoconductive element and method of making same
DE1034290B (de) * 1956-02-07 1958-07-17 Zeiss Jena Veb Carl Verfahren zur Erhoehung der Empfindlichkeit, insbesondere der Ultrarot-Empfindlichkeit, von fuer den Ultrarot-Bereich sensibilisierten Selen-Sperrschichtzellen
DE1090768B (de) * 1957-05-11 1960-10-13 Licentia Gmbh Verfahren zur Herstellung von Selentrockengleichrichtern
US3023121A (en) * 1959-08-13 1962-02-27 Robert L Dyar Method of constructing abrasive coated cylinders

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB439774A (en) * 1934-03-21 1935-12-13 British Thomson Houston Co Ltd Improvements relating to photo-electric cells and methods of manufacturing the same
US2121603A (en) * 1936-05-30 1938-06-21 Westinghouse Electric & Mfg Co Method of producing selenium rectifiers
DE916085C (de) * 1937-11-01 1954-08-02 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern
US2221596A (en) * 1938-01-22 1940-11-12 Fides Gmbh Method of manufacturing dry rectifiers
US2193610A (en) * 1938-02-17 1940-03-12 Westinghouse Electric & Mfg Co Selenium contact electrode
FR851651A (fr) * 1938-09-21 1940-01-12 Westinghouse Freins & Signaux Perfectionnements à la fabrication de dispositifs à conductibilité asymétrique
BE436627A (OSRAM) * 1938-10-24
NL96218C (OSRAM) * 1939-01-11
DE760089C (de) * 1940-04-24 1954-08-16 Siemens Schuckertwerke A G Verfahren zur Verbesserung der Sperrwirkung von Selengleichrichtern
DE640567C (de) * 1966-09-08 1937-01-07 Siemens Schuckertwerke Akt Ges Trockenplattengleichrichter

Also Published As

Publication number Publication date
US2488369A (en) 1949-11-15
CH248334A (de) 1947-04-30
GB596585A (en) 1948-01-07
DE884847C (de) 1953-07-30
NL70500C (OSRAM) 1900-01-01

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