FR3109242B1 - Procédé de fabrication d’une couche mixte comportant un guide d’onde en silicium et un guide d’onde en nitrure de silicium - Google Patents
Procédé de fabrication d’une couche mixte comportant un guide d’onde en silicium et un guide d’onde en nitrure de silicium Download PDFInfo
- Publication number
- FR3109242B1 FR3109242B1 FR2003653A FR2003653A FR3109242B1 FR 3109242 B1 FR3109242 B1 FR 3109242B1 FR 2003653 A FR2003653 A FR 2003653A FR 2003653 A FR2003653 A FR 2003653A FR 3109242 B1 FR3109242 B1 FR 3109242B1
- Authority
- FR
- France
- Prior art keywords
- silicon
- waveguide
- silicon nitride
- layer
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title abstract 8
- 229910052581 Si3N4 Inorganic materials 0.000 title abstract 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 6
- 229910052710 silicon Inorganic materials 0.000 title abstract 6
- 239000010703 silicon Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 239000003989 dielectric material Substances 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0215—Bonding to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2003653A FR3109242B1 (fr) | 2020-04-10 | 2020-04-10 | Procédé de fabrication d’une couche mixte comportant un guide d’onde en silicium et un guide d’onde en nitrure de silicium |
PCT/EP2021/058847 WO2021204749A1 (fr) | 2020-04-10 | 2021-04-06 | Procédé de fabrication d'une couche mixte comportant un guide d'onde en silicium et un guide d'onde en nitrure de silicium |
US17/995,875 US20230168429A1 (en) | 2020-04-10 | 2021-04-06 | Method for manufacturing a mixed layer comprising a silicon waveguide and a silicon nitride waveguide |
EP21716431.8A EP4133317B1 (de) | 2020-04-10 | 2021-04-06 | Verfahren zur herstellung einer mischschicht mit einem siliziumwellenleiter und einem siliziumnitridwellenleiter |
TW110112908A TW202230468A (zh) | 2020-04-10 | 2021-04-09 | 包含矽波導跟氮化矽波導之混合層的製造方法、光子三五族半導體元件的製造方法及光子三五族半導體元件 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2003653 | 2020-04-10 | ||
FR2003653A FR3109242B1 (fr) | 2020-04-10 | 2020-04-10 | Procédé de fabrication d’une couche mixte comportant un guide d’onde en silicium et un guide d’onde en nitrure de silicium |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3109242A1 FR3109242A1 (fr) | 2021-10-15 |
FR3109242B1 true FR3109242B1 (fr) | 2022-03-18 |
Family
ID=72178660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2003653A Active FR3109242B1 (fr) | 2020-04-10 | 2020-04-10 | Procédé de fabrication d’une couche mixte comportant un guide d’onde en silicium et un guide d’onde en nitrure de silicium |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230168429A1 (de) |
EP (1) | EP4133317B1 (de) |
FR (1) | FR3109242B1 (de) |
TW (1) | TW202230468A (de) |
WO (1) | WO2021204749A1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114400236B (zh) * | 2022-01-16 | 2024-04-26 | Nano科技(北京)有限公司 | 集成硅光调制器和锗硅探测器的硅光集成芯片及制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10571631B2 (en) * | 2015-01-05 | 2020-02-25 | The Research Foundation For The State University Of New York | Integrated photonics including waveguiding material |
FR3046705B1 (fr) | 2016-01-08 | 2018-02-16 | Commissariat Energie Atomique | Source laser a semi-conducteur |
US9671557B1 (en) * | 2016-03-04 | 2017-06-06 | Inphi Corporation | Vertical integration of hybrid waveguide with controlled interlayer thickness |
FR3068527A1 (fr) | 2017-06-29 | 2019-01-04 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Source laser a semi-conducteur |
US11370995B2 (en) | 2017-07-31 | 2022-06-28 | Dow Global Technologies Llc | Detergent additive |
CN110954998B (zh) * | 2018-09-27 | 2021-10-01 | 上海新微技术研发中心有限公司 | 激光器与硅光芯片集成结构及其制备方法 |
-
2020
- 2020-04-10 FR FR2003653A patent/FR3109242B1/fr active Active
-
2021
- 2021-04-06 EP EP21716431.8A patent/EP4133317B1/de active Active
- 2021-04-06 WO PCT/EP2021/058847 patent/WO2021204749A1/fr unknown
- 2021-04-06 US US17/995,875 patent/US20230168429A1/en active Pending
- 2021-04-09 TW TW110112908A patent/TW202230468A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
FR3109242A1 (fr) | 2021-10-15 |
US20230168429A1 (en) | 2023-06-01 |
TW202230468A (zh) | 2022-08-01 |
EP4133317B1 (de) | 2024-06-05 |
EP4133317A1 (de) | 2023-02-15 |
WO2021204749A1 (fr) | 2021-10-14 |
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Year of fee payment: 2 |
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Effective date: 20211015 |
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Year of fee payment: 5 |