FR3091023B1 - Capteur d'images - Google Patents

Capteur d'images Download PDF

Info

Publication number
FR3091023B1
FR3091023B1 FR1873581A FR1873581A FR3091023B1 FR 3091023 B1 FR3091023 B1 FR 3091023B1 FR 1873581 A FR1873581 A FR 1873581A FR 1873581 A FR1873581 A FR 1873581A FR 3091023 B1 FR3091023 B1 FR 3091023B1
Authority
FR
France
Prior art keywords
semiconductor region
image sensor
region
face
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1873581A
Other languages
English (en)
Other versions
FR3091023A1 (fr
Inventor
Laurent Frey
Yvon Cazaux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1873581A priority Critical patent/FR3091023B1/fr
Priority to US16/719,558 priority patent/US11152412B2/en
Priority to CN201911329220.8A priority patent/CN111354754B/zh
Publication of FR3091023A1 publication Critical patent/FR3091023A1/fr
Application granted granted Critical
Publication of FR3091023B1 publication Critical patent/FR3091023B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Capteur d'images La présente description concerne un capteur d'images comprenant une pluralité de pixels (400) comprenant chacun : une région semiconductrice photodétectrice (110) ; une région métallique (122) disposée sur une première face de la région semiconductrice ; un filtre interférentiel (160) passe-bande ou coupe-bande disposé sur une deuxième face de la région semiconductrice opposée à la première face ; et entre la région semiconductrice (110) et la région métallique (122), une portion de couche absorbante (410) en un matériau différent de celui de la région semiconductrice, la couche absorbante étant apte à absorber, en un seul passage, plus de 30 % d'un rayonnement incident à la longueur d'onde centrale de la bande passante ou de la bande de coupure du filtre interférentiel. Figure pour l'abrégé : Fig. 4
FR1873581A 2018-12-20 2018-12-20 Capteur d'images Active FR3091023B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1873581A FR3091023B1 (fr) 2018-12-20 2018-12-20 Capteur d'images
US16/719,558 US11152412B2 (en) 2018-12-20 2019-12-18 Image sensor
CN201911329220.8A CN111354754B (zh) 2018-12-20 2019-12-20 图像传感器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1873581A FR3091023B1 (fr) 2018-12-20 2018-12-20 Capteur d'images

Publications (2)

Publication Number Publication Date
FR3091023A1 FR3091023A1 (fr) 2020-06-26
FR3091023B1 true FR3091023B1 (fr) 2021-01-08

Family

ID=66641076

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1873581A Active FR3091023B1 (fr) 2018-12-20 2018-12-20 Capteur d'images

Country Status (3)

Country Link
US (1) US11152412B2 (fr)
CN (1) CN111354754B (fr)
FR (1) FR3091023B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3108783B1 (fr) * 2020-03-24 2023-09-22 Commissariat Energie Atomique Dispositif d'acquisition d'une image 2D et d'une image de profondeur d'une scène
FR3114438B1 (fr) * 2020-09-21 2022-08-05 Commissariat Energie Atomique Capteur d'images
US20220320173A1 (en) * 2021-03-30 2022-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Reduced cross-talk in color and infrared image sensor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8766385B2 (en) 2006-07-25 2014-07-01 Commissariat A L'energie Atomique Et Aux Energies Alternatives Filtering matrix structure, associated image sensor and 3D mapping device
JP5442571B2 (ja) * 2010-09-27 2014-03-12 パナソニック株式会社 固体撮像装置及び撮像装置
GB2485996A (en) * 2010-11-30 2012-06-06 St Microelectronics Res & Dev A combined proximity and ambient light sensor
TWI559023B (zh) * 2011-03-25 2016-11-21 原相科技股份有限公司 可同時偵測紅外光和可見光之光學感測裝置
US8569700B2 (en) * 2012-03-06 2013-10-29 Omnivision Technologies, Inc. Image sensor for two-dimensional and three-dimensional image capture
KR20140009774A (ko) * 2012-07-13 2014-01-23 삼성전자주식회사 3ｄ 이미지 센서 및 이를 포함하는 시스템
US9699393B2 (en) * 2014-06-26 2017-07-04 Semiconductor Components Industries, Llc Imaging systems for infrared and visible imaging with patterned infrared cutoff filters
GB201421512D0 (en) * 2014-12-03 2015-01-14 Melexis Technologies Nv A semiconductor pixel unit for simultaneously sensing visible light and near-infrared light, and a semiconductor sensor comprising same
WO2016189789A1 (fr) * 2015-05-27 2016-12-01 ソニー株式会社 Élément de capture d'images
US20170034456A1 (en) 2015-07-31 2017-02-02 Dual Aperture International Co., Ltd. Sensor assembly with selective infrared filter array
FR3056332A1 (fr) * 2016-09-21 2018-03-23 Stmicroelectronics (Grenoble 2) Sas Dispositif comportant un capteur d'image 2d et un capteur de profondeur
FR3064083B1 (fr) * 2017-03-14 2021-06-04 Commissariat Energie Atomique Filtre interferentiel
US10522580B2 (en) * 2017-08-23 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of light-sensing device

Also Published As

Publication number Publication date
US11152412B2 (en) 2021-10-19
US20200203401A1 (en) 2020-06-25
FR3091023A1 (fr) 2020-06-26
CN111354754B (zh) 2024-04-26
CN111354754A (zh) 2020-06-30

Similar Documents

Publication Publication Date Title
FR3091023B1 (fr) Capteur d'images
CN205211754U (zh) 图像传感器
US10051159B2 (en) Imaging apparatus and imaging system
US9432568B2 (en) Pixel arrangements for image sensors with phase detection pixels
CN106601761B (zh) 具有黄色滤光单元的影像感测器
US20150381869A1 (en) Image processing methods for image sensors with phase detection pixels
JPWO2019078335A1 (ja) 撮像装置および方法、並びに、画像処理装置および方法
EP3198625B1 (fr) Dispositif d'acquisition d'images bimode a photocathode
TWI558220B (zh) 具有屏蔽、深穿透及顏色檢測光二極體的顏色光感測器陣列的感應器和方法
JPS5963779A (ja) 光感知装置
US10677650B2 (en) Fourier transform multi-channel spectral imager
KR102542742B1 (ko) 반도체 이미지 센서의 픽셀 및 픽셀 제조 방법
JPH06120461A (ja) 固体撮像装置
FR3114438B1 (fr) Capteur d'images
JP2803607B2 (ja) 固体撮像装置
JPS5943869B2 (ja) センサ装置のための原稿の照明及び結像のための機構
TWI596939B (zh) 攝影模組
JPS5866470A (ja) 固体撮像装置
JPH02244761A (ja) 固体撮像素子およびその製造方法
JPS59172768A (ja) 固体撮像装置
JP2871760B2 (ja) 固体撮像装置
FR3112425B1 (fr) Capteurs d'images comprenant une matrice de filtres interférentiels
JPH03174771A (ja) 固体撮像装置
JPS5736877A (en) Solid state color photosensor
JPS6386474A (ja) 固体撮像装置

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20200626

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6