FR3108783B1 - Dispositif d'acquisition d'une image 2D et d'une image de profondeur d'une scène - Google Patents

Dispositif d'acquisition d'une image 2D et d'une image de profondeur d'une scène Download PDF

Info

Publication number
FR3108783B1
FR3108783B1 FR2002838A FR2002838A FR3108783B1 FR 3108783 B1 FR3108783 B1 FR 3108783B1 FR 2002838 A FR2002838 A FR 2002838A FR 2002838 A FR2002838 A FR 2002838A FR 3108783 B1 FR3108783 B1 FR 3108783B1
Authority
FR
France
Prior art keywords
image
sensor
acquiring
substrate
scene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2002838A
Other languages
English (en)
Other versions
FR3108783A1 (fr
Inventor
François Deneuville
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR2002838A priority Critical patent/FR3108783B1/fr
Priority to US17/203,530 priority patent/US20210305206A1/en
Priority to CN202110314092.0A priority patent/CN113451342A/zh
Publication of FR3108783A1 publication Critical patent/FR3108783A1/fr
Application granted granted Critical
Publication of FR3108783B1 publication Critical patent/FR3108783B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
    • H01L25/043Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14634Assemblies, i.e. Hybrid structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • H01L27/14629Reflectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14636Interconnect structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469Assemblies, i.e. hybrid integration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14621Colour filter arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • H01L27/14627Microlenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Dispositif d'acquisition d'une image 2D et d'une image de profondeur d'une scène La présente description concerne un dispositif d'acquisition d'une image 2D et d'une image de profondeur, comprenant : un premier capteur (C1) formé dans et sur un premier substrat semiconducteur (100) comportant une face avant et une face arrière, le premier capteur (C1) comprenant une pluralité de pixels d'image 2D (P1) et une pluralité de fenêtres transmissives (F), chaque fenêtre transmissive (F) comprenant une portion (100F) du premier substrat et une région en silicium amorphe (50) en contact avec la face arrière de ladite portion (100F) du premier substrat (100) ; et accolé au premier capteur (C1) du côté de la face arrière du premier substrat, un deuxième capteur (C2) formé dans et sur un deuxième substrat semiconducteur (130) et comprenant une pluralité de pixels de profondeur (P2) disposés en regard des fenêtres transmissives (F) du premier capteur (C1). Figure pour l'abrégé : Fig. 1
FR2002838A 2020-03-24 2020-03-24 Dispositif d'acquisition d'une image 2D et d'une image de profondeur d'une scène Active FR3108783B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR2002838A FR3108783B1 (fr) 2020-03-24 2020-03-24 Dispositif d'acquisition d'une image 2D et d'une image de profondeur d'une scène
US17/203,530 US20210305206A1 (en) 2020-03-24 2021-03-16 Device of acquisition of a 2d image and of a depth image of a scene
CN202110314092.0A CN113451342A (zh) 2020-03-24 2021-03-24 采集场景的2d图像和深度图像的装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2002838 2020-03-24
FR2002838A FR3108783B1 (fr) 2020-03-24 2020-03-24 Dispositif d'acquisition d'une image 2D et d'une image de profondeur d'une scène

Publications (2)

Publication Number Publication Date
FR3108783A1 FR3108783A1 (fr) 2021-10-01
FR3108783B1 true FR3108783B1 (fr) 2023-09-22

Family

ID=70614259

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2002838A Active FR3108783B1 (fr) 2020-03-24 2020-03-24 Dispositif d'acquisition d'une image 2D et d'une image de profondeur d'une scène

Country Status (3)

Country Link
US (1) US20210305206A1 (fr)
CN (1) CN113451342A (fr)
FR (1) FR3108783B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3130450A1 (fr) 2021-12-14 2023-06-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Capteur d'images visibles et infrarouges et procédé de fabrication d'un tel capteur
FR3140990A1 (fr) * 2022-10-14 2024-04-19 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif d’acquisition d’une image 2D et d’une image de profondeur d’une scène
WO2024116712A1 (fr) 2022-11-30 2024-06-06 Sony Semiconductor Solutions Corporation Photodétecteur et appareil électronique
FR3142833A1 (fr) 2022-12-01 2024-06-07 Commissariat à l'Energie Atomique et aux Energies Alternatives Capteur d’images visibles et infrarouges

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
KR20110061677A (ko) * 2009-12-02 2011-06-10 삼성전자주식회사 영상 센서 및 이의 제조 방법.
US8569700B2 (en) * 2012-03-06 2013-10-29 Omnivision Technologies, Inc. Image sensor for two-dimensional and three-dimensional image capture
KR20130142000A (ko) * 2012-06-18 2013-12-27 삼성전자주식회사 이미지 센서, 이를 포함하는 이미지 처리 장치, 및 이의 제조 방법
US9749553B2 (en) * 2013-08-23 2017-08-29 Semiconductor Components Industries, Llc Imaging systems with stacked image sensors
FR3075462B1 (fr) 2017-12-19 2020-03-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif d'acquisition d'une image 2d et d'une image de profondeur d'une scene
FR3091023B1 (fr) * 2018-12-20 2021-01-08 Commissariat Energie Atomique Capteur d'images

Also Published As

Publication number Publication date
FR3108783A1 (fr) 2021-10-01
US20210305206A1 (en) 2021-09-30
CN113451342A (zh) 2021-09-28

Similar Documents

Publication Publication Date Title
FR3108783B1 (fr) Dispositif d'acquisition d'une image 2D et d'une image de profondeur d'une scène
FR3075462B1 (fr) Dispositif d'acquisition d'une image 2d et d'une image de profondeur d'une scene
US7285438B2 (en) Solid-state imaging device and method for manufacturing solid-state imaging device
EP0605246B1 (fr) Détecteur de direction du regard et caméra munie d'un tel détecteur
JP4280822B2 (ja) 光飛行時間型距離センサ
FR3083646B1 (fr) Capteur d'images
WO2005059971A3 (fr) Dispositif a pixels et a matrice active equipe d'un photodetecteur
JP2020077650A (ja) 撮像素子および製造方法、並びに電子機器
WO2014113728A1 (fr) Dispositifs d'imagerie biométrique et procédés associés
EP1667233A3 (fr) Capteur d'image et pixel avec une couche de polysilicium sur la photodiode
TW200618273A (en) Solid-state imaging device and method for manufacturing the same
EP1653521A4 (fr) Photodétecteur rétroéclairé et son procédé de fabrication
AU2001295618A1 (en) Method of fabricating heterojunction photodiodes integrated with cmos
US11796389B2 (en) Sensor device and methods of use
FR3093378B1 (fr) Capteur d'images couleur et infrarouge
FR3083644B1 (fr) Capteur d'images
TWI266418B (en) Solid-state imaging device and its manufacturing method
JP2003264284A (ja) 固体撮像素子及びその製造方法
Aull et al. Geiger-mode avalanche photodiode arrays integrated with CMOS timing circuits
EP0827204A3 (fr) Pont redresseur protégé monolithique
JP2004319784A (ja) 固体撮像素子及びその製造方法
FR3111449B1 (fr) Systèmes et méthodes de détermination d’un nombre de personnes dans un véhicule
EP0489644A2 (fr) Dispositif pour la détermination de l'azimut et de la hauteur d'une source lumineuse
JP2871831B2 (ja) 固体撮像装置
KR930024467A (ko) 증폭형 고체 촬상장치

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20211001

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5