FR3076127B1 - Pvt detection circuit - Google Patents

Pvt detection circuit Download PDF

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Publication number
FR3076127B1
FR3076127B1 FR1763173A FR1763173A FR3076127B1 FR 3076127 B1 FR3076127 B1 FR 3076127B1 FR 1763173 A FR1763173 A FR 1763173A FR 1763173 A FR1763173 A FR 1763173A FR 3076127 B1 FR3076127 B1 FR 3076127B1
Authority
FR
France
Prior art keywords
transistors
circuit detection
pvt
coupled
pvt circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1763173A
Other languages
English (en)
Other versions
FR3076127A1 (fr
Inventor
Pablo Royer
Adam Makosiej
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1763173A priority Critical patent/FR3076127B1/fr
Priority to EP18209928.3A priority patent/EP3503402A1/fr
Priority to US16/219,552 priority patent/US10685700B2/en
Publication of FR3076127A1 publication Critical patent/FR3076127A1/fr
Application granted granted Critical
Publication of FR3076127B1 publication Critical patent/FR3076127B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16533—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application
    • G01R19/16538—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies
    • G01R19/16552—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies in I.C. power supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/32—Means for saving power
    • G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
    • G06F1/3234—Power saving characterised by the action undertaken
    • G06F1/3296—Power saving characterised by the action undertaken by lowering the supply or operating voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Manipulation Of Pulses (AREA)

Abstract

L'invention concerne un circuit de détection PVT, comprenant : des premier et deuxième transistors (102, 104) d'un premier type de conductivité, chacun ayant son nœud de commande couplé à une ligne de commande (EN), les premier et deuxième transistors étant agencés de telle sorte que les variations de leurs tensions de seuil en fonction de la température et/ou du procédé de fabrication sont différentes entre elles ; et un amplificateur (106) couplé à un deuxième nœud de conduction principal de chacun des premier et deuxième transistors et agencé pour amplifier une différence entre les courant (I1, I2) conduits par les premier et deuxième transistors afin de générer un signal de sortie (OUT).
FR1763173A 2017-12-22 2017-12-22 Pvt detection circuit Expired - Fee Related FR3076127B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1763173A FR3076127B1 (fr) 2017-12-22 2017-12-22 Pvt detection circuit
EP18209928.3A EP3503402A1 (fr) 2017-12-22 2018-12-03 Circuit de détection pvt
US16/219,552 US10685700B2 (en) 2017-12-22 2018-12-13 PVT detection circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1763173A FR3076127B1 (fr) 2017-12-22 2017-12-22 Pvt detection circuit
FR1763173 2017-12-22

Publications (2)

Publication Number Publication Date
FR3076127A1 FR3076127A1 (fr) 2019-06-28
FR3076127B1 true FR3076127B1 (fr) 2020-01-03

Family

ID=61802144

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1763173A Expired - Fee Related FR3076127B1 (fr) 2017-12-22 2017-12-22 Pvt detection circuit

Country Status (3)

Country Link
US (1) US10685700B2 (fr)
EP (1) EP3503402A1 (fr)
FR (1) FR3076127B1 (fr)

Family Cites Families (33)

* Cited by examiner, † Cited by third party
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US4482824A (en) * 1982-07-12 1984-11-13 Rockwell International Corporation Tracking ROM drive and sense circuit
WO1998036497A1 (fr) * 1997-02-18 1998-08-20 Rambus, Inc. Circuit d'attaque de bus equipe d'un circuit temoin de vitesse de balayage pourvu d'une serie d'elements retard
US5892389A (en) * 1997-06-03 1999-04-06 Motorola, Inc. Method and circuit for current limiting of DC-DC regulators
GB9716838D0 (en) * 1997-08-08 1997-10-15 Philips Electronics Nv Temperature sensing circuits
US6265857B1 (en) * 1998-12-22 2001-07-24 International Business Machines Corporation Constant current source circuit with variable temperature compensation
DE10204487B4 (de) * 2002-01-30 2004-03-04 Infineon Technologies Ag Temperatursensor
JP4748449B2 (ja) * 2003-11-27 2011-08-17 味の素株式会社 フェニルアラニン誘導体の結晶及びその製造方法
TW200816591A (en) * 2006-09-28 2008-04-01 Beyond Innovation Tech Co Ltd Thermal shutdown circuit and method
US7948819B2 (en) 2006-11-21 2011-05-24 Agere Systems Inc. Integrated circuit having a memory with process-voltage-temperature control
US7812661B2 (en) * 2007-09-24 2010-10-12 Mediatek Inc. Electronic system capable of compensating process, voltage and temperature effects
TWI398875B (zh) * 2008-03-17 2013-06-11 Elpida Memory Inc 具有單端感測放大器之半導體裝置
WO2010079503A2 (fr) * 2008-05-08 2010-07-15 Kpit Cummins Infosystems Ltd. Procédé et système de compensation en boucle ouverte de variations de retard dans une ligne à retard
KR101183506B1 (ko) * 2008-11-26 2012-09-20 에이비비 테크놀로지 아게 고전압 직류 회로 차단기 장치 및 방법
US8222954B1 (en) * 2009-01-29 2012-07-17 Xilinx, Inc. Method and apparatus for a process, voltage, and temperature variation tolerant semiconductor device
US8368385B2 (en) 2009-09-25 2013-02-05 Intel Corporation Methods and systems to detect voltage changes within integrated circuits
JP2011129237A (ja) * 2009-12-21 2011-06-30 Elpida Memory Inc 半導体装置及び半導体記憶装置
TWI421665B (zh) 2010-06-04 2014-01-01 Univ Nat Sun Yat Sen 角落偵測電路
US8410772B1 (en) * 2010-11-29 2013-04-02 Xilinx, Inc. Bias circuit generating bias from supply and threshold voltages
US8446791B2 (en) * 2010-12-03 2013-05-21 Oracle International Corporation Process tolerant large-swing sense amplfier with latching capability
US8159262B1 (en) * 2011-02-18 2012-04-17 Dipankar Bhattacharya Impedance compensation in a buffer circuit
US8604826B2 (en) * 2011-12-16 2013-12-10 Advanced Micro Devices, Inc. Bias compensation method and system for minimizing process, voltage and temperature corner variations
US8693264B2 (en) * 2012-02-21 2014-04-08 Lsi Corporation Memory device having sensing circuitry with automatic latching of sense amplifier output node
US20130258794A1 (en) * 2012-03-29 2013-10-03 Lsi Corporation Memory device having control circuitry for sense amplifier reaction time tracking
US8830766B2 (en) * 2013-01-23 2014-09-09 Lsi Corporation Margin free PVT tolerant fast self-timed sense amplifier reset circuit
KR102095856B1 (ko) * 2013-04-15 2020-04-01 삼성전자주식회사 반도체 메모리 장치 및 그것의 바디 바이어스 방법
US9344305B2 (en) * 2013-04-22 2016-05-17 Samsung Display Co., Ltd. PVT tolerant differential circuit
TWI498892B (zh) * 2013-09-27 2015-09-01 Univ Nat Cheng Kung 靜態隨機存取記憶體之自適應性資料保持電壓調節系統
US9189202B2 (en) * 2013-12-23 2015-11-17 The University Of Massachusetts Generate random numbers using metastability resolution time
KR20160009429A (ko) * 2014-07-16 2016-01-26 삼성전자주식회사 Ｐｖｔ 변동에 둔감한 딜레이 컨트롤 시스템 및 그 제어 방법
US9912325B2 (en) 2015-04-10 2018-03-06 Drexel University Power supply voltage detection and power delivery circuit
US9959915B2 (en) * 2015-12-11 2018-05-01 Sandisk Technologies Llc Voltage generator to compensate for process corner and temperature variations
US10302509B2 (en) * 2016-12-12 2019-05-28 Invecas, Inc. Temperature sensing for integrated circuits
KR20190008653A (ko) * 2017-07-17 2019-01-25 에스케이하이닉스 주식회사 프리차지 회로, 그를 이용한 메모리 장치 및 에스램 글로벌 카운터

Also Published As

Publication number Publication date
EP3503402A1 (fr) 2019-06-26
US20190198092A1 (en) 2019-06-27
US10685700B2 (en) 2020-06-16
FR3076127A1 (fr) 2019-06-28

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