FR3059467B1 - Transistor a heterojonction a structure verticale - Google Patents

Transistor a heterojonction a structure verticale Download PDF

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Publication number
FR3059467B1
FR3059467B1 FR1661614A FR1661614A FR3059467B1 FR 3059467 B1 FR3059467 B1 FR 3059467B1 FR 1661614 A FR1661614 A FR 1661614A FR 1661614 A FR1661614 A FR 1661614A FR 3059467 B1 FR3059467 B1 FR 3059467B1
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France
Prior art keywords
layer
electrode
gas
electrical contact
vertical structure
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FR1661614A
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English (en)
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FR3059467A1 (fr
Inventor
Rene Escoffier
Serge Loudot
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Renault SAS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Renault SAS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Application filed by Commissariat a lEnergie Atomique CEA, Renault SAS, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1661614A priority Critical patent/FR3059467B1/fr
Priority to US16/464,190 priority patent/US11222967B2/en
Priority to PCT/FR2017/053114 priority patent/WO2018100262A1/fr
Priority to CN201780084273.0A priority patent/CN110476254B/zh
Priority to EP17804252.9A priority patent/EP3549172A1/fr
Publication of FR3059467A1 publication Critical patent/FR3059467A1/fr
Application granted granted Critical
Publication of FR3059467B1 publication Critical patent/FR3059467B1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Abstract

L'invention concerne un transistor (1) à effet de champ à hétérojonction, comprenant : -un empilement de première et deuxième couches semi conductrices de type III-N (14,13) formant une couche de gaz d'électrons ou de trous (15) ; -une première électrode de conduction (21) en contact électrique avec la couche de gaz et une deuxième électrode de conduction (22); -une couche de séparation (12) positionnée à l'aplomb de la première électrode et sous la deuxième couche semi conductrice (13) ; -une troisième couche semi conductrice (11) disposée sous la couche de séparation (12) et en contact électrique avec la deuxième électrode; -un élément conducteur (24) en contact électrique avec ladite couche de gaz (15) et connectant électriquement la troisième couche semi conductrice (11) et ladite couche de gaz (15) ; -une grille de commande (23) étant positionnée entre ledit élément conducteur (24) et la première électrode de conduction (21).
FR1661614A 2016-11-29 2016-11-29 Transistor a heterojonction a structure verticale Active FR3059467B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1661614A FR3059467B1 (fr) 2016-11-29 2016-11-29 Transistor a heterojonction a structure verticale
US16/464,190 US11222967B2 (en) 2016-11-29 2017-11-14 Heterojunction transistor with vertical structure
PCT/FR2017/053114 WO2018100262A1 (fr) 2016-11-29 2017-11-14 Transistor à hétérojonction à structure verticale
CN201780084273.0A CN110476254B (zh) 2016-11-29 2017-11-14 具有垂直结构的异质结晶体管
EP17804252.9A EP3549172A1 (fr) 2016-11-29 2017-11-14 Transistor à hétérojonction à structure verticale

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1661614 2016-11-29
FR1661614A FR3059467B1 (fr) 2016-11-29 2016-11-29 Transistor a heterojonction a structure verticale

Publications (2)

Publication Number Publication Date
FR3059467A1 FR3059467A1 (fr) 2018-06-01
FR3059467B1 true FR3059467B1 (fr) 2019-05-17

Family

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Family Applications (1)

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FR1661614A Active FR3059467B1 (fr) 2016-11-29 2016-11-29 Transistor a heterojonction a structure verticale

Country Status (5)

Country Link
US (1) US11222967B2 (fr)
EP (1) EP3549172A1 (fr)
CN (1) CN110476254B (fr)
FR (1) FR3059467B1 (fr)
WO (1) WO2018100262A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11107895B2 (en) * 2018-02-23 2021-08-31 Mitsubishi Electric Corporation Semiconductor device
CN219040486U (zh) * 2020-01-16 2023-05-16 华为技术有限公司 一种氮化物半导体晶体管及电子设备
CN113287200B (zh) * 2021-04-12 2022-07-08 英诺赛科(苏州)科技有限公司 半导体器件及其制造方法
DE102021203956A1 (de) * 2021-04-21 2022-10-27 Robert Bosch Gesellschaft mit beschränkter Haftung Membran-halbleiterbauelement und verfahren zum herstellen desselben
CN117133794A (zh) * 2022-05-18 2023-11-28 苏州东微半导体股份有限公司 氮化镓hemt器件及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4974454B2 (ja) * 2004-11-15 2012-07-11 株式会社豊田中央研究所 半導体装置
US8461626B2 (en) * 2007-07-09 2013-06-11 Freescale Semiconductor, Inc. Hetero-structure field effect transistor, integrated circuit including a hetero-structure field effect transistor and method for manufacturing a hetero-structure field effect transistor
CN102292812B (zh) * 2009-02-03 2014-04-02 飞思卡尔半导体公司 半导体结构、包括半导体结构的集成电路及制造半导体结构的方法
US9660038B2 (en) * 2012-09-16 2017-05-23 Sensor Electronic Technology, Inc. Lateral/vertical semiconductor device
US20150270356A1 (en) * 2014-03-20 2015-09-24 Massachusetts Institute Of Technology Vertical nitride semiconductor device
JP5669119B1 (ja) * 2014-04-18 2015-02-12 株式会社パウデック 半導体素子、電気機器、双方向電界効果トランジスタおよび実装構造体

Also Published As

Publication number Publication date
CN110476254B (zh) 2023-10-03
WO2018100262A1 (fr) 2018-06-07
FR3059467A1 (fr) 2018-06-01
US20200295173A1 (en) 2020-09-17
US11222967B2 (en) 2022-01-11
EP3549172A1 (fr) 2019-10-09
CN110476254A (zh) 2019-11-19

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