FR3057394B1 - Dispositif de protection contre les decharges electrostatiques avec circuit de declenchement distribue - Google Patents
Dispositif de protection contre les decharges electrostatiques avec circuit de declenchement distribue Download PDFInfo
- Publication number
- FR3057394B1 FR3057394B1 FR1661085A FR1661085A FR3057394B1 FR 3057394 B1 FR3057394 B1 FR 3057394B1 FR 1661085 A FR1661085 A FR 1661085A FR 1661085 A FR1661085 A FR 1661085A FR 3057394 B1 FR3057394 B1 FR 3057394B1
- Authority
- FR
- France
- Prior art keywords
- terminal
- resistive
- protection against
- triggering circuit
- against electrostatic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 abstract 3
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
- H01L27/027—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
- H01L27/0285—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements bias arrangements for gate electrode of field effect transistors, e.g. RC networks, voltage partitioning circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Le dispositif de protection est réalisé dans et sur un film semi-conducteur (1) situé sur une couche isolante enterrée (2) elle-même située au-dessus d'un caisson semi-conducteur (3). Il comprend une première borne (B1) et une deuxième borne (B2), au moins un module (MD1) comportant au moins un transistor MOS (TR) connecté entre la première borne (B1) et la deuxième borne (B2) et ayant sa région de grille (G), son substrat (B) et ledit caisson (3) électriquement couplés, au moins un circuit résistif-capacitif (RC) configuré pour rendre passant le transistor MOS (TR) lors de l'apparition d'une décharge électrostatique sur la première borne (B1) ou sur la deuxième borne (B2), ledit au moins un circuit résistif-capacitif (RC) possédant une partie commune avec l'une au moins des régions de source, de grille et de drain du transistor et comportant un élément capacitif et un élément résistif, une première électrode de l'élément capacitif comportant l'élément résistif et une deuxième électrode de l'élément capacitif comportant au moins une portion du film semi-conducteur (1).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GR20160100522 | 2016-10-10 | ||
GR20160100522 | 2016-10-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3057394A1 FR3057394A1 (fr) | 2018-04-13 |
FR3057394B1 true FR3057394B1 (fr) | 2019-05-03 |
Family
ID=61783928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1661085A Expired - Fee Related FR3057394B1 (fr) | 2016-10-10 | 2016-11-16 | Dispositif de protection contre les decharges electrostatiques avec circuit de declenchement distribue |
Country Status (3)
Country | Link |
---|---|
US (2) | US9947650B1 (fr) |
CN (2) | CN207320106U (fr) |
FR (1) | FR3057394B1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3057394B1 (fr) * | 2016-10-10 | 2019-05-03 | Stmicroelectronics Sa | Dispositif de protection contre les decharges electrostatiques avec circuit de declenchement distribue |
CN112259605B (zh) * | 2020-10-22 | 2022-08-23 | 东南大学 | 一种耐瞬时电流冲击的异质结半导体器件 |
CN112765922B (zh) * | 2020-12-31 | 2024-04-19 | 中国科学院上海微系统与信息技术研究所 | 采用soi衬底的射频晶体管的仿真模型 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5208719A (en) | 1991-08-20 | 1993-05-04 | Vlsi Technology, Inc. | Output pad electrostatic discharge protection circuit for mos devices |
US5631793A (en) | 1995-09-05 | 1997-05-20 | Winbond Electronics Corporation | Capacitor-couple electrostatic discharge protection circuit |
US20060044716A1 (en) * | 2004-08-31 | 2006-03-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | ESD protection circuit with improved trigger-on voltage |
US7746607B2 (en) | 2006-04-27 | 2010-06-29 | International Business Machines Corporation | Substrate triggering for ESD protection in SOI |
JP2010016177A (ja) * | 2008-07-03 | 2010-01-21 | Toshiba Corp | 静電気放電保護素子 |
US7982523B2 (en) * | 2008-12-05 | 2011-07-19 | Infineon Technologies Ag | Electro static discharge clamping device |
US9019666B2 (en) | 2010-01-22 | 2015-04-28 | Stmicroelectronics S.A. | Electronic device, in particular for protection against electrostatic discharges, and method for protecting a component against electrostatic discharges |
JP5701684B2 (ja) * | 2011-05-23 | 2015-04-15 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
FR3038775A1 (fr) | 2015-07-09 | 2017-01-13 | St Microelectronics Sa | Prise de contact substrat pour un transistor mos dans un substrat soi, en particulier fdsoi |
FR3057394B1 (fr) * | 2016-10-10 | 2019-05-03 | Stmicroelectronics Sa | Dispositif de protection contre les decharges electrostatiques avec circuit de declenchement distribue |
-
2016
- 2016-11-16 FR FR1661085A patent/FR3057394B1/fr not_active Expired - Fee Related
-
2017
- 2017-04-24 CN CN201720439282.4U patent/CN207320106U/zh not_active Withdrawn - After Issue
- 2017-04-24 CN CN201710271703.1A patent/CN107919353B/zh active Active
- 2017-04-26 US US15/497,993 patent/US9947650B1/en active Active
-
2018
- 2018-03-07 US US15/914,387 patent/US10211201B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
FR3057394A1 (fr) | 2018-04-13 |
US20180102358A1 (en) | 2018-04-12 |
US10211201B2 (en) | 2019-02-19 |
CN107919353A (zh) | 2018-04-17 |
CN107919353B (zh) | 2022-01-04 |
CN207320106U (zh) | 2018-05-04 |
US20180197848A1 (en) | 2018-07-12 |
US9947650B1 (en) | 2018-04-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
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PLSC | Publication of the preliminary search report |
Effective date: 20180921 |
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PLFP | Fee payment |
Year of fee payment: 3 |
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PLFP | Fee payment |
Year of fee payment: 4 |
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ST | Notification of lapse |
Effective date: 20210705 |