FR2982701B1 - Dispositif memoire - Google Patents

Dispositif memoire

Info

Publication number
FR2982701B1
FR2982701B1 FR1160411A FR1160411A FR2982701B1 FR 2982701 B1 FR2982701 B1 FR 2982701B1 FR 1160411 A FR1160411 A FR 1160411A FR 1160411 A FR1160411 A FR 1160411A FR 2982701 B1 FR2982701 B1 FR 2982701B1
Authority
FR
France
Prior art keywords
transistor
node
memory device
gate node
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1160411A
Other languages
English (en)
Other versions
FR2982701A1 (fr
Inventor
Maximilien Glorieux
Sylvain Clerc
Gilles Gasiot
Philippe Roche
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1160411A priority Critical patent/FR2982701B1/fr
Priority to US13/669,226 priority patent/US8837206B2/en
Publication of FR2982701A1 publication Critical patent/FR2982701A1/fr
Application granted granted Critical
Publication of FR2982701B1 publication Critical patent/FR2982701B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements

Landscapes

  • Static Random-Access Memory (AREA)
FR1160411A 2011-11-16 2011-11-16 Dispositif memoire Expired - Fee Related FR2982701B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1160411A FR2982701B1 (fr) 2011-11-16 2011-11-16 Dispositif memoire
US13/669,226 US8837206B2 (en) 2011-11-16 2012-11-05 Memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1160411A FR2982701B1 (fr) 2011-11-16 2011-11-16 Dispositif memoire

Publications (2)

Publication Number Publication Date
FR2982701A1 FR2982701A1 (fr) 2013-05-17
FR2982701B1 true FR2982701B1 (fr) 2014-01-03

Family

ID=45815682

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1160411A Expired - Fee Related FR2982701B1 (fr) 2011-11-16 2011-11-16 Dispositif memoire

Country Status (2)

Country Link
US (1) US8837206B2 (fr)
FR (1) FR2982701B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6666105B2 (ja) * 2015-10-13 2020-03-13 ラピスセミコンダクタ株式会社 半導体装置および選択回路
US11183234B2 (en) * 2019-11-25 2021-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Bitcell supporting bit-write-mask function

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5956008A (en) * 1994-09-06 1999-09-21 Semiconductor Energy Laboratory Co., Driver circuit for active matrix display and method of operating same
SG103872A1 (en) * 2001-07-16 2004-05-26 Semiconductor Energy Lab Shift register and method of driving the same
US7321504B2 (en) * 2005-04-21 2008-01-22 Micron Technology, Inc Static random access memory cell
FR2884988A1 (fr) 2005-04-22 2006-10-27 St Microelectronics Sa Bascule protegee contre les pics de courant ou de tension
US20080054973A1 (en) * 2006-09-06 2008-03-06 Atmel Corporation Leakage improvement for a high-voltage latch
JP4378405B2 (ja) * 2007-10-26 2009-12-09 シャープ株式会社 走査信号線駆動回路および表示装置
US8441842B2 (en) * 2010-12-21 2013-05-14 Lsi Corporation Memory device having memory cells with enhanced low voltage write capability
US8547778B2 (en) * 2011-10-04 2013-10-01 Oracle International Corporation Apparatus and method for converting static memory address to memory address pulse

Also Published As

Publication number Publication date
FR2982701A1 (fr) 2013-05-17
US20130121070A1 (en) 2013-05-16
US8837206B2 (en) 2014-09-16

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150731