FR2981194B1 - Procede de formation d'une couche de silicium cristalise en surface de plusieurs substrats - Google Patents

Procede de formation d'une couche de silicium cristalise en surface de plusieurs substrats

Info

Publication number
FR2981194B1
FR2981194B1 FR1158983A FR1158983A FR2981194B1 FR 2981194 B1 FR2981194 B1 FR 2981194B1 FR 1158983 A FR1158983 A FR 1158983A FR 1158983 A FR1158983 A FR 1158983A FR 2981194 B1 FR2981194 B1 FR 2981194B1
Authority
FR
France
Prior art keywords
forming
silicon layer
multiple substrates
crystallized silicon
crystallized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1158983A
Other languages
English (en)
Other versions
FR2981194A1 (fr
Inventor
Virginie Brize
Jean-Paul Garandet
Stephen Giraud
Etienne Pihan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1158983A priority Critical patent/FR2981194B1/fr
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to PCT/IB2012/055272 priority patent/WO2013050927A1/fr
Priority to EP12784345.6A priority patent/EP2764139A1/fr
Priority to BR112014007964A priority patent/BR112014007964A2/pt
Priority to KR1020147012295A priority patent/KR20140074382A/ko
Priority to US14/349,987 priority patent/US20140261156A1/en
Priority to JP2014534019A priority patent/JP2014535162A/ja
Publication of FR2981194A1 publication Critical patent/FR2981194A1/fr
Application granted granted Critical
Publication of FR2981194B1 publication Critical patent/FR2981194B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/062—Vertical dipping system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
FR1158983A 2011-10-05 2011-10-05 Procede de formation d'une couche de silicium cristalise en surface de plusieurs substrats Expired - Fee Related FR2981194B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1158983A FR2981194B1 (fr) 2011-10-05 2011-10-05 Procede de formation d'une couche de silicium cristalise en surface de plusieurs substrats
EP12784345.6A EP2764139A1 (fr) 2011-10-05 2012-10-02 Procede de formation d'une couche de silicium cristallisee en surface de plusieurs substrats
BR112014007964A BR112014007964A2 (pt) 2011-10-05 2012-10-02 método de formação de uma camada de silício cristalizado na superfície de uma pluralidade de substratos
KR1020147012295A KR20140074382A (ko) 2011-10-05 2012-10-02 복수의 기판 표면에 결정화된 실리콘 층을 형성하는 방법
PCT/IB2012/055272 WO2013050927A1 (fr) 2011-10-05 2012-10-02 Procede de formation d'une couche de silicium cristallisee en surface de plusieurs substrats
US14/349,987 US20140261156A1 (en) 2011-10-05 2012-10-02 Method of Forming a Crystallized Silicon Layer on the Surface of a Plurality of Substrates
JP2014534019A JP2014535162A (ja) 2011-10-05 2012-10-02 複数枚の基板の表面上に結晶化シリコン層を形成する方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1158983A FR2981194B1 (fr) 2011-10-05 2011-10-05 Procede de formation d'une couche de silicium cristalise en surface de plusieurs substrats

Publications (2)

Publication Number Publication Date
FR2981194A1 FR2981194A1 (fr) 2013-04-12
FR2981194B1 true FR2981194B1 (fr) 2014-05-23

Family

ID=47172845

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1158983A Expired - Fee Related FR2981194B1 (fr) 2011-10-05 2011-10-05 Procede de formation d'une couche de silicium cristalise en surface de plusieurs substrats

Country Status (7)

Country Link
US (1) US20140261156A1 (fr)
EP (1) EP2764139A1 (fr)
JP (1) JP2014535162A (fr)
KR (1) KR20140074382A (fr)
BR (1) BR112014007964A2 (fr)
FR (1) FR2981194B1 (fr)
WO (1) WO2013050927A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013143018A1 (fr) * 2012-03-26 2013-10-03 北京通美晶体技术有限公司 Substrat monocristallin semi-conducteur de groupe iiia-va et procédé de préparation dudit substrat

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2137160A1 (en) * 1971-05-14 1972-12-29 Thomson Csf Monocrystalline semiconductor substrate prodn - with low specific resistance
JP2002184709A (ja) * 2000-10-02 2002-06-28 Canon Inc 半導体薄膜の製造方法及びその製造装置
US6551908B2 (en) * 2000-10-02 2003-04-22 Canon Kabushiki Kaisha Method for producing semiconductor thin films on moving substrates
JP2003292395A (ja) * 2002-03-29 2003-10-15 Canon Inc 液相成長装置および液相成長方法
EP2135979B1 (fr) * 2007-03-27 2013-12-18 NGK Insulators, Ltd. Procédé de fabrication d'un nitrure monocristallin
US20090297774A1 (en) * 2008-05-28 2009-12-03 Praveen Chaudhari Methods of growing heterepitaxial single crystal or large grained semiconductor films and devices thereon

Also Published As

Publication number Publication date
US20140261156A1 (en) 2014-09-18
BR112014007964A2 (pt) 2017-04-11
WO2013050927A1 (fr) 2013-04-11
KR20140074382A (ko) 2014-06-17
JP2014535162A (ja) 2014-12-25
EP2764139A1 (fr) 2014-08-13
FR2981194A1 (fr) 2013-04-12

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