FR2958200B1 - Procede de polissage chimico-mecanique d'un substrat avec une composition de polissage adaptee pour accroitre l'elimination de l'oxyde de silicium - Google Patents

Procede de polissage chimico-mecanique d'un substrat avec une composition de polissage adaptee pour accroitre l'elimination de l'oxyde de silicium

Info

Publication number
FR2958200B1
FR2958200B1 FR1152169A FR1152169A FR2958200B1 FR 2958200 B1 FR2958200 B1 FR 2958200B1 FR 1152169 A FR1152169 A FR 1152169A FR 1152169 A FR1152169 A FR 1152169A FR 2958200 B1 FR2958200 B1 FR 2958200B1
Authority
FR
France
Prior art keywords
elimination
substrate
increase
silicon oxide
chemical mechanical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1152169A
Other languages
English (en)
French (fr)
Other versions
FR2958200A1 (fr
Inventor
Yi Guo
Zhendong Liu
Kancharla-Arun Kumar Reddy
Guangyun Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of FR2958200A1 publication Critical patent/FR2958200A1/fr
Application granted granted Critical
Publication of FR2958200B1 publication Critical patent/FR2958200B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
FR1152169A 2010-03-31 2011-03-16 Procede de polissage chimico-mecanique d'un substrat avec une composition de polissage adaptee pour accroitre l'elimination de l'oxyde de silicium Active FR2958200B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/750,799 US8431490B2 (en) 2010-03-31 2010-03-31 Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal

Publications (2)

Publication Number Publication Date
FR2958200A1 FR2958200A1 (fr) 2011-10-07
FR2958200B1 true FR2958200B1 (fr) 2015-04-17

Family

ID=44653739

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1152169A Active FR2958200B1 (fr) 2010-03-31 2011-03-16 Procede de polissage chimico-mecanique d'un substrat avec une composition de polissage adaptee pour accroitre l'elimination de l'oxyde de silicium

Country Status (7)

Country Link
US (1) US8431490B2 (enExample)
JP (1) JP5861906B2 (enExample)
KR (1) KR101672809B1 (enExample)
CN (1) CN102206465B (enExample)
DE (1) DE102011013982B4 (enExample)
FR (1) FR2958200B1 (enExample)
TW (1) TWI500749B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9012327B2 (en) * 2013-09-18 2015-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Low defect chemical mechanical polishing composition
US9275899B2 (en) 2014-06-27 2016-03-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing tungsten
JP6533439B2 (ja) * 2015-09-15 2019-06-19 株式会社フジミインコーポレーテッド 研磨用組成物
US9484212B1 (en) * 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
CN107953225A (zh) * 2016-10-14 2018-04-24 上海新昇半导体科技有限公司 半导体晶圆的抛光方法
US10683439B2 (en) * 2018-03-15 2020-06-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
JP7222750B2 (ja) * 2019-02-14 2023-02-15 ニッタ・デュポン株式会社 研磨用組成物
US11292938B2 (en) * 2019-09-11 2022-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of selective chemical mechanical polishing cobalt, zirconium oxide, poly-silicon and silicon dioxide films
US12291655B2 (en) * 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU7147798A (en) 1997-04-23 1998-11-13 Advanced Chemical Systems International, Inc. Planarization compositions for cmp of interlayer dielectrics
JP2000136375A (ja) * 1998-10-30 2000-05-16 Okamoto Machine Tool Works Ltd 研磨剤スラリ−
JP4644323B2 (ja) * 1999-04-28 2011-03-02 Ａｇｃセイミケミカル株式会社 有機アルカリを含有する半導体用研磨剤
JP2001162515A (ja) * 1999-07-08 2001-06-19 Ricoh Co Ltd 研磨布およびその製造方法並びにマイクロカプセルおよびその製造方法
US6303506B1 (en) * 1999-09-30 2001-10-16 Infineon Technologies Ag Compositions for and method of reducing/eliminating scratches and defects in silicon dioxide during CMP process
JP3956364B2 (ja) * 2001-04-09 2007-08-08 東洋ゴム工業株式会社 ポリウレタン組成物および研磨パッド
JP2004266155A (ja) * 2003-03-03 2004-09-24 Jsr Corp 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法
TW200424299A (en) * 2002-12-26 2004-11-16 Kao Corp Polishing composition
JP2004303983A (ja) * 2003-03-31 2004-10-28 Fuji Photo Film Co Ltd 研磨パッド
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7300480B2 (en) * 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
JP2005268665A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
US20060124026A1 (en) * 2004-12-10 2006-06-15 3M Innovative Properties Company Polishing solutions
US7446046B2 (en) 2005-01-06 2008-11-04 Intel Corporation Selective polish for fabricating electronic devices
US7452481B2 (en) * 2005-05-16 2008-11-18 Kabushiki Kaisha Kobe Seiko Sho Polishing slurry and method of reclaiming wafers
US7585340B2 (en) * 2006-04-27 2009-09-08 Cabot Microelectronics Corporation Polishing composition containing polyether amine
WO2007130350A1 (en) * 2006-05-02 2007-11-15 Cabot Microelectronics Corporation Compositions and methods for cmp of semiconductor materials
KR100827591B1 (ko) * 2006-11-27 2008-05-07 제일모직주식회사 화학적 기계적 연마용 슬러리 조성물 및 그 전구체 조성물
US7820068B2 (en) * 2007-02-21 2010-10-26 Houghton Technical Corp. Chemical assisted lapping and polishing of metals
JP2009278061A (ja) * 2008-04-16 2009-11-26 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及び研磨方法
US20110045203A1 (en) * 2009-08-21 2011-02-24 E. I. Du Pont De Nemours And Company Process for inhibiting oxide formation on copper surfaces

Also Published As

Publication number Publication date
TWI500749B (zh) 2015-09-21
US20110244685A1 (en) 2011-10-06
TW201139635A (en) 2011-11-16
CN102206465B (zh) 2014-04-02
FR2958200A1 (fr) 2011-10-07
KR101672809B1 (ko) 2016-11-04
CN102206465A (zh) 2011-10-05
DE102011013982A1 (de) 2014-02-13
KR20110109859A (ko) 2011-10-06
US8431490B2 (en) 2013-04-30
DE102011013982B4 (de) 2023-08-10
JP2011216873A (ja) 2011-10-27
JP5861906B2 (ja) 2016-02-16

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