FR2916108B1 - Amplificateur de puissance a haute frequence - Google Patents
Amplificateur de puissance a haute frequenceInfo
- Publication number
- FR2916108B1 FR2916108B1 FR0754771A FR0754771A FR2916108B1 FR 2916108 B1 FR2916108 B1 FR 2916108B1 FR 0754771 A FR0754771 A FR 0754771A FR 0754771 A FR0754771 A FR 0754771A FR 2916108 B1 FR2916108 B1 FR 2916108B1
- Authority
- FR
- France
- Prior art keywords
- high frequency
- power amplifier
- frequency power
- amplifier
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
- H03F3/604—Combinations of several amplifiers using FET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21103—An impedance adaptation circuit being added at the input of a power amplifier stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21139—An impedance adaptation circuit being added at the output of a power amplifier stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21178—Power transistors are made by coupling a plurality of single transistors in parallel
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006287964A JP4743077B2 (ja) | 2006-10-23 | 2006-10-23 | 高周波電力増幅器 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2916108A1 FR2916108A1 (fr) | 2008-11-14 |
FR2916108B1 true FR2916108B1 (fr) | 2012-09-28 |
Family
ID=39244486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0754771A Expired - Fee Related FR2916108B1 (fr) | 2006-10-23 | 2007-04-27 | Amplificateur de puissance a haute frequence |
Country Status (6)
Country | Link |
---|---|
US (1) | US7511575B2 (fr) |
JP (1) | JP4743077B2 (fr) |
CN (1) | CN101170300B (fr) |
DE (1) | DE102007027047B4 (fr) |
FR (1) | FR2916108B1 (fr) |
TW (1) | TWI333736B (fr) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4257346B2 (ja) * | 2006-06-27 | 2009-04-22 | 株式会社東芝 | 電力増幅器 |
TWI327817B (en) * | 2006-09-25 | 2010-07-21 | Realtek Semiconductor Corp | Amplifying circuit utilizing nonlinear gate capacitance for enhancing linearity and related method thereof |
US8592966B2 (en) | 2007-06-22 | 2013-11-26 | Cree, Inc. | RF transistor packages with internal stability network including intra-capacitor resistors and methods of forming RF transistor packages with internal stability networks including intra-capacitor resistors |
US8330265B2 (en) * | 2007-06-22 | 2012-12-11 | Cree, Inc. | RF transistor packages with internal stability network and methods of forming RF transistor packages with internal stability networks |
JP4996406B2 (ja) * | 2007-09-25 | 2012-08-08 | 株式会社東芝 | 増幅器、無線送信装置および無線受信装置 |
US7746173B1 (en) * | 2008-04-30 | 2010-06-29 | Triquint Semiconductor, Inc. | Power amplifier with output harmonic resonators |
JP2010245871A (ja) * | 2009-04-07 | 2010-10-28 | Mitsubishi Electric Corp | 電力合成増幅器 |
JP5238633B2 (ja) * | 2009-07-27 | 2013-07-17 | 株式会社東芝 | 半導体装置 |
JP5631607B2 (ja) * | 2009-08-21 | 2014-11-26 | 株式会社東芝 | マルチチップモジュール構造を有する高周波回路 |
JP2011250360A (ja) * | 2010-05-31 | 2011-12-08 | Toshiba Corp | 高周波モジュール |
US8525594B2 (en) * | 2010-06-21 | 2013-09-03 | Panasonic Corporation | Radio frequency amplifier circuit |
JP2012049909A (ja) * | 2010-08-27 | 2012-03-08 | Toshiba Corp | 広帯域電力増幅器 |
JP5269045B2 (ja) * | 2010-11-26 | 2013-08-21 | 株式会社東芝 | 電力増幅装置及び連結電力増幅装置 |
US20130021104A1 (en) | 2011-07-18 | 2013-01-24 | Ubidyne, Inc. | Amplifier arrangement |
JP5853477B2 (ja) | 2011-08-04 | 2016-02-09 | 三菱電機株式会社 | 電力増幅器 |
US8461930B2 (en) * | 2011-08-18 | 2013-06-11 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Monolithic microwave integrated circuit (MMIC) including air bridge coupler |
JP5799767B2 (ja) * | 2011-11-18 | 2015-10-28 | 三菱電機株式会社 | 電力増幅器 |
US10511267B2 (en) | 2015-12-08 | 2019-12-17 | Mitsubishi Electric Corporation | Power amplifier |
US9929704B2 (en) * | 2015-12-14 | 2018-03-27 | Qualcomm Incorporated | Class E2 amplifier |
JP2019508955A (ja) * | 2016-02-04 | 2019-03-28 | フラウンホーファ−ゲゼルシャフト ツァー フォルデルング デア アンゲバンデン フォルシュンク エー. ファオ.Fraunhofer−Gesellschaft Zur Forderung Der Angewandten Forschung E. V. | マトリックス電力増幅器 |
US10153306B2 (en) * | 2016-02-29 | 2018-12-11 | Skyworks Solutions, Inc. | Transistor layout with low aspect ratio |
US9979361B1 (en) * | 2016-12-27 | 2018-05-22 | Nxp Usa, Inc. | Input circuits for RF amplifier devices, and methods of manufacture thereof |
EP3361634B1 (fr) * | 2017-02-13 | 2019-09-18 | NXP USA, Inc. | Filtre d'harmoniques pour amplificateur rf |
US10270402B1 (en) * | 2017-11-30 | 2019-04-23 | Nxp Usa, Inc. | Broadband input matching and video bandwidth circuits for power amplifiers |
WO2019155601A1 (fr) * | 2018-02-09 | 2019-08-15 | 三菱電機株式会社 | Amplificateur |
JP7307532B2 (ja) * | 2018-09-14 | 2023-07-12 | 株式会社東芝 | 増幅回路および送信装置 |
US10629526B1 (en) * | 2018-10-11 | 2020-04-21 | Nxp Usa, Inc. | Transistor with non-circular via connections in two orientations |
US10742174B2 (en) | 2018-12-21 | 2020-08-11 | Nxp Usa, Inc. | Broadband power transistor devices and amplifiers with input-side harmonic termination circuits and methods of manufacture |
US11979117B2 (en) | 2019-03-25 | 2024-05-07 | Mitsubishi Electric Corporation | High frequency semiconductor amplifier |
JP2021016076A (ja) | 2019-07-11 | 2021-02-12 | 株式会社村田製作所 | 半導体装置 |
CN114902398A (zh) | 2020-01-07 | 2022-08-12 | 三菱电机株式会社 | 高频半导体装置 |
CN114035212B (zh) * | 2022-01-10 | 2022-05-20 | 荣耀终端有限公司 | 接收模组、封装结构、印制电路板及电子设备 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0332820U (fr) * | 1989-08-02 | 1991-03-29 | ||
JPH0344326U (fr) * | 1989-08-31 | 1991-04-24 | ||
JPH0715256A (ja) * | 1993-06-29 | 1995-01-17 | Mitsubishi Electric Corp | マイクロ波増幅器 |
JP2695395B2 (ja) | 1994-05-19 | 1997-12-24 | 松下電器産業株式会社 | 高周波電力増幅器 |
JPH11251849A (ja) * | 1998-03-04 | 1999-09-17 | Matsushita Electric Ind Co Ltd | 高周波電力増幅器 |
JPH11346130A (ja) * | 1998-06-02 | 1999-12-14 | Mitsubishi Electric Corp | 半導体装置 |
JP3888785B2 (ja) * | 1998-09-28 | 2007-03-07 | 三菱電機株式会社 | 高周波電力増幅器 |
JP2002043873A (ja) | 2000-07-26 | 2002-02-08 | Hitachi Shonan Denshi Co Ltd | 広帯域電力増幅回路 |
JP2002171138A (ja) * | 2000-12-01 | 2002-06-14 | Nec Corp | マイクロ波電力増幅器 |
JP2002368553A (ja) * | 2001-06-08 | 2002-12-20 | Mitsubishi Electric Corp | 高周波増幅器およびそれを用いた無線送信装置 |
US6614308B2 (en) * | 2001-10-22 | 2003-09-02 | Infineon Technologies Ag | Multi-stage, high frequency, high power signal amplifier |
US6980057B2 (en) * | 2003-06-26 | 2005-12-27 | Matsushita Electric Industrial Co., Ltd. | Power amplifier, power distributor, and power combiner |
JP2005109651A (ja) | 2003-09-29 | 2005-04-21 | Nec Kansai Ltd | 無線周波増幅器 |
JP2007060616A (ja) * | 2005-07-29 | 2007-03-08 | Mitsubishi Electric Corp | 高周波電力増幅器 |
-
2006
- 2006-10-23 JP JP2006287964A patent/JP4743077B2/ja active Active
-
2007
- 2007-03-01 TW TW096106958A patent/TWI333736B/zh active
- 2007-03-06 US US11/682,366 patent/US7511575B2/en active Active
- 2007-04-27 FR FR0754771A patent/FR2916108B1/fr not_active Expired - Fee Related
- 2007-06-11 CN CN2007101099137A patent/CN101170300B/zh active Active
- 2007-06-12 DE DE102007027047A patent/DE102007027047B4/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE102007027047A1 (de) | 2008-04-30 |
CN101170300B (zh) | 2010-06-09 |
JP2008109227A (ja) | 2008-05-08 |
FR2916108A1 (fr) | 2008-11-14 |
US20080094141A1 (en) | 2008-04-24 |
TWI333736B (en) | 2010-11-21 |
JP4743077B2 (ja) | 2011-08-10 |
US7511575B2 (en) | 2009-03-31 |
CN101170300A (zh) | 2008-04-30 |
TW200820592A (en) | 2008-05-01 |
DE102007027047B4 (de) | 2011-07-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20151231 |