FR2891067B1 - Dispositif et procedes de lithographie par immersion. - Google Patents

Dispositif et procedes de lithographie par immersion.

Info

Publication number
FR2891067B1
FR2891067B1 FR0607732A FR0607732A FR2891067B1 FR 2891067 B1 FR2891067 B1 FR 2891067B1 FR 0607732 A FR0607732 A FR 0607732A FR 0607732 A FR0607732 A FR 0607732A FR 2891067 B1 FR2891067 B1 FR 2891067B1
Authority
FR
France
Prior art keywords
methods
immersion lithography
lithography
immersion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0607732A
Other languages
English (en)
Other versions
FR2891067A1 (fr
Inventor
Ching Yu Chang
Chin Hsiang Lin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Original Assignee
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Manufacturing Co TSMC Ltd filed Critical Taiwan Semiconductor Manufacturing Co TSMC Ltd
Publication of FR2891067A1 publication Critical patent/FR2891067A1/fr
Application granted granted Critical
Publication of FR2891067B1 publication Critical patent/FR2891067B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
FR0607732A 2005-09-13 2006-09-04 Dispositif et procedes de lithographie par immersion. Active FR2891067B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/225,268 US20070058263A1 (en) 2005-09-13 2005-09-13 Apparatus and methods for immersion lithography

Publications (2)

Publication Number Publication Date
FR2891067A1 FR2891067A1 (fr) 2007-03-23
FR2891067B1 true FR2891067B1 (fr) 2012-08-31

Family

ID=37775955

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0607732A Active FR2891067B1 (fr) 2005-09-13 2006-09-04 Dispositif et procedes de lithographie par immersion.

Country Status (9)

Country Link
US (1) US20070058263A1 (fr)
JP (1) JP4486945B2 (fr)
CN (1) CN1932648A (fr)
DE (2) DE102006027846B4 (fr)
FR (1) FR2891067B1 (fr)
IL (1) IL176590A0 (fr)
NL (1) NL1032126C2 (fr)
SG (1) SG130991A1 (fr)
TW (1) TW200712784A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7367345B1 (en) * 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
JP5114021B2 (ja) * 2006-01-23 2013-01-09 富士フイルム株式会社 パターン形成方法
JP2008218653A (ja) * 2007-03-02 2008-09-18 Canon Inc 露光装置及びデバイス製造方法
JP4490459B2 (ja) * 2007-06-29 2010-06-23 キヤノン株式会社 露光装置及びデバイス製造方法
TWI399620B (zh) * 2009-05-05 2013-06-21 Nat Synchrotron Radiation Res Ct 立體光阻微結構的製作方法
CN102207685B (zh) * 2011-01-22 2012-11-21 浙江大学 用于浸没式光刻机的磁流体注入和回收控制装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7367345B1 (en) * 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
US7010958B2 (en) * 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
KR101238142B1 (ko) * 2003-04-10 2013-02-28 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP2261742A3 (fr) * 2003-06-11 2011-05-25 ASML Netherlands BV Appareil lithographique et méthode de fabrication d'un dispositif
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
US20070132969A1 (en) * 2003-07-24 2007-06-14 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus and method for introducing an immersion liquid into an immersion space
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
TWI245163B (en) * 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP3993549B2 (ja) * 2003-09-30 2007-10-17 株式会社東芝 レジストパターン形成方法
EP1531362A3 (fr) * 2003-11-13 2007-07-25 Matsushita Electric Industrial Co., Ltd. Appareil de fabrication de semiconducteurs et méthode pour réaliser des motifs
JP2005183438A (ja) * 2003-12-16 2005-07-07 Matsushita Electric Ind Co Ltd パターン形成方法
TWI259319B (en) * 2004-01-23 2006-08-01 Air Prod & Chem Immersion lithography fluids
JP4535489B2 (ja) * 2004-03-31 2010-09-01 東京エレクトロン株式会社 塗布・現像装置
JP2006108564A (ja) * 2004-10-08 2006-04-20 Renesas Technology Corp 電子デバイスの製造方法および露光システム
US7119035B2 (en) * 2004-11-22 2006-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method using specific contact angle for immersion lithography
JP4262252B2 (ja) * 2005-03-02 2009-05-13 キヤノン株式会社 露光装置
US7317507B2 (en) * 2005-05-03 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
CN1932648A (zh) 2007-03-21
US20070058263A1 (en) 2007-03-15
DE102006027846A1 (de) 2007-03-22
JP2007081373A (ja) 2007-03-29
DE102006062988B3 (de) 2017-01-05
SG130991A1 (en) 2007-04-26
DE102006027846B4 (de) 2014-11-20
FR2891067A1 (fr) 2007-03-23
TW200712784A (en) 2007-04-01
NL1032126A1 (nl) 2007-03-15
DE102006062988B8 (de) 2017-03-23
IL176590A0 (en) 2006-10-31
JP4486945B2 (ja) 2010-06-23
NL1032126C2 (nl) 2008-02-28

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