FR2858717B1 - Procede de fabrication d'une cellule auto-alignee du type silicium-oxyde-nitrure-oxyde-silicium et cette cellule - Google Patents

Procede de fabrication d'une cellule auto-alignee du type silicium-oxyde-nitrure-oxyde-silicium et cette cellule

Info

Publication number
FR2858717B1
FR2858717B1 FR0408659A FR0408659A FR2858717B1 FR 2858717 B1 FR2858717 B1 FR 2858717B1 FR 0408659 A FR0408659 A FR 0408659A FR 0408659 A FR0408659 A FR 0408659A FR 2858717 B1 FR2858717 B1 FR 2858717B1
Authority
FR
France
Prior art keywords
oxide
cell
silicium
nitride
self
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0408659A
Other languages
English (en)
Other versions
FR2858717A1 (fr
Inventor
Hee Seog Jeon
Seung Beom Yoon
Yong Tae Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2858717A1 publication Critical patent/FR2858717A1/fr
Application granted granted Critical
Publication of FR2858717B1 publication Critical patent/FR2858717B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
FR0408659A 2003-08-08 2004-08-05 Procede de fabrication d'une cellule auto-alignee du type silicium-oxyde-nitrure-oxyde-silicium et cette cellule Expired - Fee Related FR2858717B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2003-0055030A KR100498507B1 (ko) 2003-08-08 2003-08-08 자기정렬형 1 비트 소노스(ｓｏｎｏｓ) 셀 및 그 형성방법

Publications (2)

Publication Number Publication Date
FR2858717A1 FR2858717A1 (fr) 2005-02-11
FR2858717B1 true FR2858717B1 (fr) 2008-06-13

Family

ID=34075010

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0408659A Expired - Fee Related FR2858717B1 (fr) 2003-08-08 2004-08-05 Procede de fabrication d'une cellule auto-alignee du type silicium-oxyde-nitrure-oxyde-silicium et cette cellule

Country Status (5)

Country Link
US (2) US7141473B2 (fr)
JP (1) JP2005064506A (fr)
KR (1) KR100498507B1 (fr)
DE (1) DE102004038874B4 (fr)
FR (1) FR2858717B1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI233666B (en) * 2004-04-13 2005-06-01 Powerchip Semiconductor Corp Method of manufacturing non-volatile memory cell
JP4927708B2 (ja) * 2005-02-28 2012-05-09 スパンション エルエルシー 半導体装置及びその製造方法
KR100631278B1 (ko) * 2005-09-05 2006-10-04 동부일렉트로닉스 주식회사 비휘발성 기억 장치 및 그 제조방법
US7482231B2 (en) * 2006-01-06 2009-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Manufacturing of memory array and periphery
US7482236B2 (en) * 2006-01-06 2009-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for a sidewall SONOS memory device
US7405119B2 (en) * 2006-01-06 2008-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for a sidewall SONOS memory device
US7902022B2 (en) * 2008-07-29 2011-03-08 Freescale Semiconductor, Inc. Self-aligned in-laid split gate memory and method of making
US8471328B2 (en) 2010-07-26 2013-06-25 United Microelectronics Corp. Non-volatile memory and manufacturing method thereof
US9246046B1 (en) * 2014-09-26 2016-01-26 Sunpower Corporation Etching processes for solar cell fabrication
US10756113B2 (en) * 2017-11-23 2020-08-25 Yangtze Memory Technologies Co., Ltd. Protective structure and fabrication methods for the peripheral circuits of a three-dimensional memory
CN108878439A (zh) * 2018-06-29 2018-11-23 上海华虹宏力半导体制造有限公司 Sonos非挥发性存储器及其制造方法
CN109103086B (zh) * 2018-08-29 2021-01-22 上海华虹宏力半导体制造有限公司 多晶硅栅的制造方法
CN111370420B (zh) * 2020-03-18 2023-08-22 上海华虹宏力半导体制造有限公司 Sonos存储器件的制备方法及sonos存储器件
TW202308107A (zh) 2021-08-09 2023-02-16 聯華電子股份有限公司 半導體記憶元件及其製作方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3198141B2 (ja) * 1992-01-21 2001-08-13 シチズン時計株式会社 半導体不揮発性記憶素子の製造方法
JPH08321564A (ja) * 1995-05-25 1996-12-03 Sanyo Electric Co Ltd 不揮発性半導体記憶装置およびその製造方法
JP3973819B2 (ja) 1999-03-08 2007-09-12 株式会社東芝 半導体記憶装置およびその製造方法
JP4904631B2 (ja) * 2000-10-27 2012-03-28 ソニー株式会社 不揮発性半導体記憶装置およびその製造方法
US6531350B2 (en) 2001-02-22 2003-03-11 Halo, Inc. Twin MONOS cell fabrication method and array organization
JP2002299473A (ja) * 2001-03-29 2002-10-11 Fujitsu Ltd 半導体記憶装置及びその駆動方法
KR100389130B1 (ko) * 2001-04-25 2003-06-25 삼성전자주식회사 2비트 동작의 2트랜지스터를 구비한 불휘발성 메모리소자
US6670240B2 (en) * 2001-08-13 2003-12-30 Halo Lsi, Inc. Twin NAND device structure, array operations and fabrication method
US6593187B1 (en) * 2001-08-27 2003-07-15 Taiwan Semiconductor Manufacturing Company Method to fabricate a square poly spacer in flash
US6413821B1 (en) * 2001-09-18 2002-07-02 Seiko Epson Corporation Method of fabricating semiconductor device including nonvolatile memory and peripheral circuit
TW527652B (en) * 2002-02-06 2003-04-11 Taiwan Semiconductor Mfg Manufacturing method of selection gate for the split gate flash memory cell and its structure
TW530416B (en) * 2002-03-26 2003-05-01 Nanya Technology Corp Structure and manufacturing method of split gate flash memory
US6784039B2 (en) * 2002-10-16 2004-08-31 Taiwan Semiconductor Manufacturing Company Method to form self-aligned split gate flash with L-shaped wordline spacers
KR100518594B1 (ko) * 2003-09-09 2005-10-04 삼성전자주식회사 로컬 ｓｏｎｏｓ형 비휘발성 메모리 소자 및 그 제조방법
KR100546379B1 (ko) * 2003-09-15 2006-01-26 삼성전자주식회사 자기 정렬 방식에 의한 로컬 소노스형 비휘발성 메모리소자 및 그 제조방법

Also Published As

Publication number Publication date
US20050029574A1 (en) 2005-02-10
DE102004038874B4 (de) 2006-09-28
KR100498507B1 (ko) 2005-07-01
US7141473B2 (en) 2006-11-28
FR2858717A1 (fr) 2005-02-11
DE102004038874A1 (de) 2005-03-03
US7768061B2 (en) 2010-08-03
KR20050017758A (ko) 2005-02-23
JP2005064506A (ja) 2005-03-10
US20070063267A1 (en) 2007-03-22

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Effective date: 20100430