FR2840468B1 - Dispositif amplificateur inverseur haute tension - Google Patents

Dispositif amplificateur inverseur haute tension

Info

Publication number
FR2840468B1
FR2840468B1 FR0206517A FR0206517A FR2840468B1 FR 2840468 B1 FR2840468 B1 FR 2840468B1 FR 0206517 A FR0206517 A FR 0206517A FR 0206517 A FR0206517 A FR 0206517A FR 2840468 B1 FR2840468 B1 FR 2840468B1
Authority
FR
France
Prior art keywords
high voltage
amplifier device
voltage inverter
inverter amplifier
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0206517A
Other languages
English (en)
Other versions
FR2840468A1 (fr
Inventor
Yannick Guedon
Philippe Maige
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0206517A priority Critical patent/FR2840468B1/fr
Priority to US10/446,508 priority patent/US6864736B2/en
Publication of FR2840468A1 publication Critical patent/FR2840468A1/fr
Application granted granted Critical
Publication of FR2840468B1 publication Critical patent/FR2840468B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
FR0206517A 2002-05-28 2002-05-28 Dispositif amplificateur inverseur haute tension Expired - Fee Related FR2840468B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0206517A FR2840468B1 (fr) 2002-05-28 2002-05-28 Dispositif amplificateur inverseur haute tension
US10/446,508 US6864736B2 (en) 2002-05-28 2003-05-27 High-voltage inverter amplifier device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0206517A FR2840468B1 (fr) 2002-05-28 2002-05-28 Dispositif amplificateur inverseur haute tension

Publications (2)

Publication Number Publication Date
FR2840468A1 FR2840468A1 (fr) 2003-12-05
FR2840468B1 true FR2840468B1 (fr) 2004-08-27

Family

ID=29558784

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0206517A Expired - Fee Related FR2840468B1 (fr) 2002-05-28 2002-05-28 Dispositif amplificateur inverseur haute tension

Country Status (2)

Country Link
US (1) US6864736B2 (fr)
FR (1) FR2840468B1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001056159A1 (fr) * 2000-01-27 2001-08-02 Hitachi, Ltd. Dispositif a semiconducteur
JP5009492B2 (ja) * 2003-06-23 2012-08-22 三星エスディアイ株式会社 プラズマディスプレイパネルの駆動装置及び駆動方法
US7064598B2 (en) * 2004-03-25 2006-06-20 Silicon Laboratories, Inc. Radio frequency CMOS buffer circuit and method
FR2878666A1 (fr) * 2004-12-01 2006-06-02 St Microelectronics Sa Etage de sortie haut potentiel et application a la commande d'ecrans de visualisation, tels que par exemple des ecrans plasmas
EP1715582B1 (fr) * 2005-04-22 2010-11-03 ebm-papst Mulfingen GmbH & Co. KG Agencement de circuit destiné à piloter un commutateur de puissance électrique à haute tension
JP5090083B2 (ja) * 2007-06-29 2012-12-05 ルネサスエレクトロニクス株式会社 半導体装置
US20090281736A1 (en) * 2008-05-12 2009-11-12 Hyeung-Yun Kim Method and apparatus for concurrent positive and negative actuation in structural health monitoring systems
JP2011124657A (ja) * 2009-12-08 2011-06-23 Renesas Electronics Corp 駆動回路
TWI442568B (zh) * 2010-02-26 2014-06-21 Univ Ishou Vertical driving method of transistor
CN105700610B (zh) * 2016-01-29 2017-06-06 上海华虹宏力半导体制造有限公司 Ldo电路
US11175319B1 (en) * 2020-09-18 2021-11-16 Stmicroelectronics Asia Pacific Pte Ltd High accuracy low temperature drift high-side current sensing hardware and method
CN114257083A (zh) * 2020-09-24 2022-03-29 深圳英集芯科技股份有限公司 一种电荷泵电路、芯片及电子装置
US11606030B1 (en) * 2020-10-15 2023-03-14 Dialog Semiconductor B.V. Driver for driving a p-type power switch

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3183699B2 (ja) * 1992-03-13 2001-07-09 沖電気工業株式会社 半導体記憶装置
GB9320246D0 (en) * 1993-10-01 1993-11-17 Sgs Thomson Microelectronics A driver circuit
DE69319910T2 (de) * 1993-10-29 1998-12-10 Sgs-Thomson Microelectronics S.R.L., Agrate Brianza, Mailand/Milano Eingangs-/Ausgangsschnittstellenschaltung für analoge und digitale Signale
DE19814675A1 (de) * 1997-04-03 1998-10-08 Fuji Electric Co Ltd Ausgabeschaltung für einen Leistungs-IC mit hoher Durchbruchsspannung
EP0913925B1 (fr) * 1997-10-31 2004-10-06 STMicroelectronics S.r.l. Etage de sortie à haute tension pour la commande d'une charge électrique
EP0913927B1 (fr) * 1997-10-31 2004-10-06 STMicroelectronics S.r.l. Décaleur de niveau haute tension pour la commande d'un étage de sortie

Also Published As

Publication number Publication date
US6864736B2 (en) 2005-03-08
US20040012411A1 (en) 2004-01-22
FR2840468A1 (fr) 2003-12-05

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090119