FR2849537B1 - Commutateur bidirectionnel haute tension - Google Patents

Commutateur bidirectionnel haute tension

Info

Publication number
FR2849537B1
FR2849537B1 FR0216807A FR0216807A FR2849537B1 FR 2849537 B1 FR2849537 B1 FR 2849537B1 FR 0216807 A FR0216807 A FR 0216807A FR 0216807 A FR0216807 A FR 0216807A FR 2849537 B1 FR2849537 B1 FR 2849537B1
Authority
FR
France
Prior art keywords
high voltage
bidirectional switch
voltage bidirectional
switch
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0216807A
Other languages
English (en)
Other versions
FR2849537A1 (fr
Inventor
Samuel Menard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0216807A priority Critical patent/FR2849537B1/fr
Priority to US10/744,412 priority patent/US6914271B2/en
Publication of FR2849537A1 publication Critical patent/FR2849537A1/fr
Application granted granted Critical
Publication of FR2849537B1 publication Critical patent/FR2849537B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
FR0216807A 2002-12-27 2002-12-27 Commutateur bidirectionnel haute tension Expired - Fee Related FR2849537B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0216807A FR2849537B1 (fr) 2002-12-27 2002-12-27 Commutateur bidirectionnel haute tension
US10/744,412 US6914271B2 (en) 2002-12-27 2003-12-23 High-voltage bidirectional switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0216807A FR2849537B1 (fr) 2002-12-27 2002-12-27 Commutateur bidirectionnel haute tension

Publications (2)

Publication Number Publication Date
FR2849537A1 FR2849537A1 (fr) 2004-07-02
FR2849537B1 true FR2849537B1 (fr) 2005-03-25

Family

ID=32480253

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0216807A Expired - Fee Related FR2849537B1 (fr) 2002-12-27 2002-12-27 Commutateur bidirectionnel haute tension

Country Status (2)

Country Link
US (1) US6914271B2 (fr)
FR (1) FR2849537B1 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8519503B2 (en) 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
US7709921B2 (en) 2008-08-27 2010-05-04 Udt Sensors, Inc. Photodiode and photodiode array with improved performance characteristics
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US8120023B2 (en) 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
US7566914B2 (en) 2005-07-07 2009-07-28 Intersil Americas Inc. Devices with adjustable dual-polarity trigger- and holding-voltage/current for high level of electrostatic discharge protection in sub-micron mixed signal CMOS/BiCMOS integrated circuits
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
BRPI0919221A2 (pt) 2008-09-15 2015-12-08 Osi Optoelectronics Inc fotodiodo de espinha de peixe de camada ativa fina com uma camada n+ rasa e método de fabricação do mesmo
TWI393349B (zh) * 2008-12-17 2013-04-11 Ind Tech Res Inst 信號傳收裝置及系統
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
US8664690B1 (en) * 2012-11-15 2014-03-04 Macronix International Co., Ltd. Bi-directional triode thyristor for high voltage electrostatic discharge protection
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
US8835975B1 (en) * 2013-05-10 2014-09-16 Ixys Corporation Ultra-fast breakover diode
US9935206B2 (en) * 2013-05-10 2018-04-03 Ixys Corporation Packaged overvoltage protection circuit for triggering thyristors
US9722061B2 (en) * 2014-07-24 2017-08-01 Stmicroelectronics (Tours) Sas Bidirectional switch
US10741548B2 (en) 2015-04-13 2020-08-11 Infineon Technologies Ag Protection devices with trigger devices and methods of formation thereof
DE102016204699B4 (de) 2015-04-13 2020-07-30 Infineon Technologies Ag Schutzvorrichtungen mit Trigger-Vorrichtungen und Verfahren zu deren Bildung
FR3039014B1 (fr) * 2015-07-13 2019-06-14 Stmicroelectronics (Tours) Sas Protection de ligne telephonique contre les surtensions
FR3076661A1 (fr) 2018-01-05 2019-07-12 Stmicroelectronics (Tours) Sas Triode semiconductrice

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0680821B2 (ja) * 1989-05-01 1994-10-12 株式会社東芝 高感度トライアック
US5420403A (en) * 1992-05-26 1995-05-30 Canada Post Corporation Mail encoding and processing system
US5483087A (en) * 1994-07-08 1996-01-09 International Rectifier Corporation Bidirectional thyristor with MOS turn-off capability with a single gate
GB2332540B (en) * 1997-12-18 2002-12-04 Ibm An improved parcel trace system
FR2818806B1 (fr) * 2000-12-21 2003-03-21 St Microelectronics Sa Commutateur electronique bidirectionnel bistable a commande par implusions
FR2819102B1 (fr) * 2000-12-29 2003-04-04 St Microelectronics Sa Commutateur electronique bidirectionnel bistable a commande par impulsions

Also Published As

Publication number Publication date
FR2849537A1 (fr) 2004-07-02
US20040135170A1 (en) 2004-07-15
US6914271B2 (en) 2005-07-05

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090831