FR2787634B1 - Procede de realisation de transistors cmos et dispositifs associes - Google Patents

Procede de realisation de transistors cmos et dispositifs associes

Info

Publication number
FR2787634B1
FR2787634B1 FR9816028A FR9816028A FR2787634B1 FR 2787634 B1 FR2787634 B1 FR 2787634B1 FR 9816028 A FR9816028 A FR 9816028A FR 9816028 A FR9816028 A FR 9816028A FR 2787634 B1 FR2787634 B1 FR 2787634B1
Authority
FR
France
Prior art keywords
associated devices
cmos transistors
producing cmos
producing
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9816028A
Other languages
English (en)
Other versions
FR2787634A1 (fr
Inventor
Francois Plais
Carlo Reita
Odile Huet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR9816028A priority Critical patent/FR2787634B1/fr
Priority to JP2000590208A priority patent/JP2002533925A/ja
Priority to KR1020007009131A priority patent/KR100722728B1/ko
Priority to PCT/FR1999/003151 priority patent/WO2000038229A1/fr
Priority to EP99958336A priority patent/EP1057215A1/fr
Priority to US09/601,350 priority patent/US6627489B1/en
Publication of FR2787634A1 publication Critical patent/FR2787634A1/fr
Application granted granted Critical
Publication of FR2787634B1 publication Critical patent/FR2787634B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
FR9816028A 1998-12-18 1998-12-18 Procede de realisation de transistors cmos et dispositifs associes Expired - Fee Related FR2787634B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR9816028A FR2787634B1 (fr) 1998-12-18 1998-12-18 Procede de realisation de transistors cmos et dispositifs associes
JP2000590208A JP2002533925A (ja) 1998-12-18 1999-12-15 Ｃｍｏｓトランジスタ及び関連素子の製造方法
KR1020007009131A KR100722728B1 (ko) 1998-12-18 1999-12-15 Ｃｍｏｓ 트랜지스터 및 관련 소자의 제조 방법
PCT/FR1999/003151 WO2000038229A1 (fr) 1998-12-18 1999-12-15 Procede de realisation de transistors cmos et dispositifs associes
EP99958336A EP1057215A1 (fr) 1998-12-18 1999-12-15 Procede de realisation de transistors cmos et dispositifs associes
US09/601,350 US6627489B1 (en) 1998-12-18 1999-12-15 Method of producing CMOS transistors and related devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9816028A FR2787634B1 (fr) 1998-12-18 1998-12-18 Procede de realisation de transistors cmos et dispositifs associes

Publications (2)

Publication Number Publication Date
FR2787634A1 FR2787634A1 (fr) 2000-06-23
FR2787634B1 true FR2787634B1 (fr) 2003-09-12

Family

ID=9534153

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9816028A Expired - Fee Related FR2787634B1 (fr) 1998-12-18 1998-12-18 Procede de realisation de transistors cmos et dispositifs associes

Country Status (6)

Country Link
US (1) US6627489B1 (fr)
EP (1) EP1057215A1 (fr)
JP (1) JP2002533925A (fr)
KR (1) KR100722728B1 (fr)
FR (1) FR2787634B1 (fr)
WO (1) WO2000038229A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101006439B1 (ko) * 2003-11-12 2011-01-06 삼성전자주식회사 박막 트랜지스터 표시판의 제조 방법
JP2005216899A (ja) * 2004-01-27 2005-08-11 Elpida Memory Inc 半導体装置の製造方法
KR101740943B1 (ko) 2009-09-24 2017-06-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN104576387B (zh) * 2013-10-14 2017-07-25 上海和辉光电有限公司 低温多晶硅薄膜晶体管制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5668019A (en) * 1992-01-30 1997-09-16 Mitsubishi Denki Kabushiki Kaisha Method of fabricating thin film transistor
JPH05275450A (ja) * 1992-01-30 1993-10-22 Mitsubishi Electric Corp 薄膜トランジスタの製造方法
JP3599827B2 (ja) * 1994-05-20 2004-12-08 三菱電機株式会社 アクティブマトリクス液晶ディスプレイの製法
DE19500380C2 (de) * 1994-05-20 2001-05-17 Mitsubishi Electric Corp Aktivmatrix-Flüssigkristallanzeige und Herstellungsverfahren dafür
KR950033619U (ko) * 1994-05-24 1995-12-16 자동차용 축전지 고정장치
US6917083B1 (en) * 1995-07-27 2005-07-12 Micron Technology, Inc. Local ground and VCC connection in an SRAM cell
JP3844552B2 (ja) * 1997-02-26 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR19990039940A (ko) * 1997-11-15 1999-06-05 구자홍 박막트랜지스터 제조방법

Also Published As

Publication number Publication date
EP1057215A1 (fr) 2000-12-06
WO2000038229A1 (fr) 2000-06-29
KR20010041092A (ko) 2001-05-15
US6627489B1 (en) 2003-09-30
JP2002533925A (ja) 2002-10-08
KR100722728B1 (ko) 2007-05-29
FR2787634A1 (fr) 2000-06-23

Similar Documents

Publication Publication Date Title
FR2731715B1 (fr) Piece de micro-mecanique et procede de realisation
FR2775216B1 (fr) Panneau insonorisant et procede de realisation
GB9919913D0 (en) Thin-film transistors and method for producing the same
FR2760510B1 (fr) Dispositif de serrage pour tubes et son procede de realisation
BR9803500B1 (pt) método e aparelho para tratamento de refugo.
NO20006465D0 (no) Anordning og fremgangsmåte for å forme en ekstrudert frossen smågjenstand
ID30055A (id) Peralatan pengolahan limbah
FR2802691B1 (fr) Procede de surveillance maritime
FR2808167B1 (fr) Procede de realisation de confiseries en vrac
DE60036249D1 (de) Feldeffekttransistor und dessen Herstellungsverfahren
FR2774012B1 (fr) Dispositif et procede de raclage
NO20014283L (no) Anordning for krystallisasjon og fremgangsmåte for krystallisasjon
DE69915218D1 (de) Überwachungsapparat
SG90085A1 (en) Method for forming borderless gate structures and apparatus formed thereby
DE69920558D1 (de) Kristallisierverfahren und Vorrichtung
BR9915745B1 (pt) aparelho de moldagem compacto e processo de moldagem.
PL348146A1 (en) Granulate and method and device for the production thereof
FR2766920B1 (fr) Micromonochromateur et procede de realisation de celui-ci
FR2787634B1 (fr) Procede de realisation de transistors cmos et dispositifs associes
FR2666172B1 (fr) Transistor de puissance et procede de realisation.
AU1191199A (en) Blow mold apparatus for minimal gate
FR2841079B1 (fr) Procede de diffusion d'application html
MA25410A1 (fr) Procede meunier
FR2778058B1 (fr) Procede et dispositif de pseudo-mise a la masse
FR2781518B1 (fr) Chassis de fenetre et son procede de realisation

Legal Events

Date Code Title Description
CD Change of name or company name
PLFP Fee payment

Year of fee payment: 18

ST Notification of lapse

Effective date: 20170831