FR2773266B1 - Structure electronique comprenant des transistors a haute et basse tension et procede de fabrication correspondant - Google Patents

Structure electronique comprenant des transistors a haute et basse tension et procede de fabrication correspondant

Info

Publication number
FR2773266B1
FR2773266B1 FR9716882A FR9716882A FR2773266B1 FR 2773266 B1 FR2773266 B1 FR 2773266B1 FR 9716882 A FR9716882 A FR 9716882A FR 9716882 A FR9716882 A FR 9716882A FR 2773266 B1 FR2773266 B1 FR 2773266B1
Authority
FR
France
Prior art keywords
manufacturing
low voltage
corresponding method
electronic structure
voltage transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9716882A
Other languages
English (en)
Other versions
FR2773266A1 (fr
Inventor
Federico Pio
Olivier Pizzuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Priority to FR9716882A priority Critical patent/FR2773266B1/fr
Priority to EP98204129A priority patent/EP0954029A1/fr
Priority to JP10371239A priority patent/JPH11251452A/ja
Priority to US09/222,568 priority patent/US6268633B1/en
Publication of FR2773266A1 publication Critical patent/FR2773266A1/fr
Priority to US09/853,321 priority patent/US20010019157A1/en
Application granted granted Critical
Publication of FR2773266B1 publication Critical patent/FR2773266B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
FR9716882A 1997-12-31 1997-12-31 Structure electronique comprenant des transistors a haute et basse tension et procede de fabrication correspondant Expired - Fee Related FR2773266B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR9716882A FR2773266B1 (fr) 1997-12-31 1997-12-31 Structure electronique comprenant des transistors a haute et basse tension et procede de fabrication correspondant
EP98204129A EP0954029A1 (fr) 1997-12-31 1998-12-05 Structure électronique comprenant des transistors à haute et basse tension et procédé de fabrication correspondant
JP10371239A JPH11251452A (ja) 1997-12-31 1998-12-25 高電圧トランジスタと低電圧トランジスタとから構成される電子構造体及びその製造方法
US09/222,568 US6268633B1 (en) 1997-12-31 1998-12-28 Electronic structure comprising high and low voltage transistors, and a corresponding fabrication method
US09/853,321 US20010019157A1 (en) 1997-12-31 2001-05-10 Electronic structure comprising high and low voltage transistors, and a corresponding fabrication method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9716882A FR2773266B1 (fr) 1997-12-31 1997-12-31 Structure electronique comprenant des transistors a haute et basse tension et procede de fabrication correspondant

Publications (2)

Publication Number Publication Date
FR2773266A1 FR2773266A1 (fr) 1999-07-02
FR2773266B1 true FR2773266B1 (fr) 2001-11-09

Family

ID=9515444

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9716882A Expired - Fee Related FR2773266B1 (fr) 1997-12-31 1997-12-31 Structure electronique comprenant des transistors a haute et basse tension et procede de fabrication correspondant

Country Status (4)

Country Link
US (2) US6268633B1 (fr)
EP (1) EP0954029A1 (fr)
JP (1) JPH11251452A (fr)
FR (1) FR2773266B1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2034518A3 (fr) * 1998-07-22 2009-06-03 STMicroelectronics S.r.l. Dispositifs électroniques comprenant des transistors à haute et basse tension avec des jonctions en siliciure auto-alignées
US6268250B1 (en) * 1999-05-14 2001-07-31 Micron Technology, Inc. Efficient fabrication process for dual well type structures
JP2002141420A (ja) * 2000-10-31 2002-05-17 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP4094376B2 (ja) * 2002-08-21 2008-06-04 富士通株式会社 半導体装置及びその製造方法
EP1403927A1 (fr) * 2002-09-30 2004-03-31 STMicroelectronics S.r.l. Transistor à haute tension intégré avec des cellules de mémoire non-volatile
EP1435648A1 (fr) * 2002-12-30 2004-07-07 STMicroelectronics S.r.l. Procédé de fabrication des transistors CMOS et MOS à extension du drain, avec un grille en silicide
US6933577B2 (en) * 2003-10-24 2005-08-23 International Business Machines Corporation High performance FET with laterally thin extension
US20050110083A1 (en) * 2003-11-21 2005-05-26 Gammel Peter L. Metal-oxide-semiconductor device having improved gate arrangement
KR100683852B1 (ko) * 2004-07-02 2007-02-15 삼성전자주식회사 반도체 소자의 마스크롬 소자 및 그 형성 방법
CN100423212C (zh) * 2005-06-03 2008-10-01 联华电子股份有限公司 高压金属氧化物半导体晶体管元件及其制造方法
KR100822806B1 (ko) * 2006-10-20 2008-04-18 삼성전자주식회사 비휘발성 메모리 장치 및 그 형성 방법
US11049967B2 (en) * 2018-11-02 2021-06-29 Texas Instruments Incorporated DMOS transistor having thick gate oxide and STI and method of fabricating

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0695563B2 (ja) * 1985-02-01 1994-11-24 株式会社日立製作所 半導体装置
US4814854A (en) * 1985-05-01 1989-03-21 Texas Instruments Incorporated Integrated circuit device and process with tin-gate transistor
US5024960A (en) * 1987-06-16 1991-06-18 Texas Instruments Incorporated Dual LDD submicron CMOS process for making low and high voltage transistors with common gate
US5472887A (en) * 1993-11-09 1995-12-05 Texas Instruments Incorporated Method of fabricating semiconductor device having high-and low-voltage MOS transistors
US5850096A (en) * 1994-02-25 1998-12-15 Fujitsu Limited Enhanced semiconductor integrated circuit device with a memory array and a peripheral circuit
US5589423A (en) * 1994-10-03 1996-12-31 Motorola Inc. Process for fabricating a non-silicided region in an integrated circuit
JPH08148561A (ja) * 1994-11-16 1996-06-07 Mitsubishi Electric Corp 半導体装置とその製造方法
US5783850A (en) * 1995-04-27 1998-07-21 Taiwan Semiconductor Manufacturing Company Undoped polysilicon gate process for NMOS ESD protection circuits
JPH09283643A (ja) * 1996-04-19 1997-10-31 Rohm Co Ltd 半導体装置および半導体装置の製造法
US5605853A (en) * 1996-05-28 1997-02-25 Taiwan Semiconductor Manufacturing Company Ltd. Method of making a semiconductor device having 4 transistor SRAM and floating gate memory cells
EP0811983A1 (fr) * 1996-06-06 1997-12-10 STMicroelectronics S.r.l. Cellule de mémoire de type flash, dispositif électronique comportant une telle cellule et procédé de fabrication correspondant

Also Published As

Publication number Publication date
US20010019157A1 (en) 2001-09-06
JPH11251452A (ja) 1999-09-17
EP0954029A1 (fr) 1999-11-03
FR2773266A1 (fr) 1999-07-02
US6268633B1 (en) 2001-07-31

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Effective date: 20090831